• Applied Chemistry for Engineering
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• v.20 no.3
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• pp.335-338
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• 2009

As important intermediates for blue emitting materials of organic light-emitting diodes, bromotriphenylethylene derivatives for distrylarylenes are prepared by reactions of bromobenzophenone with benzylphosphonates. The reaction produces a 60 : 40 mixture of (Z)- and (E)-geometric isomers that are difficult to be resolved. The (Z)-isomer is successfully isolated by a selective recrystallization process using 2-propanol as a solvent. The X-ray structure analysis of (Z)-isomer shows that dihedral angles between tert-butylphenyl ring and bromophenyl ring and between bromophenyl ring and phenyl ring are $56.5(4)^{\circ}$ and $74.1(4)^{\circ}$, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.137-144
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• 2014

In this paper, we propose the histogram matching-based power reduction technique considering the perceptual image quality. The conventional methods cannot analyze the clipping error of an image, and hence, they significantly degrade the image quality when pixels with the clipping error are concentrated on small area. The proposed method generates histograms for various images with different characteristics, and it calculates and stores the optimal clipping rate in a database. Then, it compares the histograms with that of an input image, and selects the histogram and clipping rate with the minimum difference to prevent the image quality degradation. In the experimental results, the proposed method improved the average PSNR and SSIM by up to 15.795 dB and 0.036, compared with the conventional methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.4041-4046
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• 2010

Wholly aromatic polyesters having flexible alkoxy side chain were synthesized by direct polycondensation. The synthetic polymers have been characterized by $^1H$-NMR, FT-IR. DSC, TGA, optical polarizing microscope and X-ray diffractometer. The inherent viscosities (${\eta}_{inh}$) measured in 1,1,2,2-tetrachloroethane (TCE) were 0.46~2.41 dL/g. The polymers having side chain showed double melting transition, ie, solid-sanidic liquid crystalline (LC) phase transition ($T_{m1}$) and sanidic LC phase-nematic LC phase transition ($T_{m2}$). As incresing length of alkoxy side chain, phase transition temperatures decreased and solubilities in organic solvents incresed. The peaks of $2{\theta}\;{\simeq}5$ and $2{\theta}\;{\simeq}20$ in X-ray diffractograms are due to crystallization of polymer main chain and of long side chain, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.137-137
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• 2003

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.

• Design & Manufacturing
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• v.14 no.2
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• pp.21-27
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• 2020

Recently, LCD (Liquid Crystal Display) has been replaced by OLDE (Organic Light Emitting Diode) in high resolution display industry. In the process of OLDE production, it inspects defective products by sending a signal using a probe during OLED panel inspection. At this time, the cause of the detection of failure is divided into two. One is the self-defect of the OLED panel and the other is the poor contact occurring in the process of contact between the two. The second case is unknown at the time of testing, which increases the time for retesting. To this end, we made a system that can identify in real time whether the probe is in contact during the inspection. A contact probe unit was designed for the system, and a stage system was implemented. An inspection system was constructed through S / W and circuit configuration for actual inspection. Finally, a system that can check contact and non-contact in real time was constructed.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.40 no.1
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• pp.114-123
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• 2017

The global small and mid-sized display market is changing from thin film transistor-liquid crystal display to organic light emitting diode (OLED). Reflecting these market conditions, the domestic and overseas display panel industry is making great effort to innovate OLED technology and incease productivity. However, current OLED production technology has not been able to satisfy the quality requirement levels by customers, as the market demand for OLED is becoming more and more diversified. In addition, as OLED panel production technology levels to satisfy customers' requirement become higher, product quality problems are persistently generated in OLED deposition process. These problems not only decrease the production yield but also cause a second problem of deteriorating productivity. Based on these observations, in this study, we suggest TRIZ-based improvement of defects caused by glass pixel position deformation, which is one of quality deterioration problems in small and medium OLED deposition process. Specifically, we derive various factors affecting the glass pixel position shift by using cause and effect diagram and identify radical reasons by using XY-matrix. As a result, it is confirmed that glass heat distortion due to the high temperature of the OLED deposition process is the most influential factor in the glass pixel position shift. In order to solve the identified factors, we analyzed the cause and mechanism of glass thermal deformation. We suggest an efficient method to minimize glass thermal deformation by applying the improvement plan of facilities using contradiction matrix in TRIZ. We show that the suggested method can decrease the glass temperature change by about 23% through an experiment.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.177-182
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• 2005

Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.65-71
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• 1996

The chemical behaviour of the Eu(Ⅲ) complexes with organic ligands(tris[3-(trifluoromethylhydroxymethylene-camphorato)]) and tris[3-heptafluoropropylhydroxymethylene-camphorato)] has been investigated by the UV/vis-spectrophotometric, magnetic, and electrochemcial methods. The two or three energy absorption bands are observed by the spectra of these complexes. The magnitude of crystal field splitting energy, the spin pair energy and strength were obtained from the spectra of the complexes. These complexes are found to be delocalization, low-spin state, and strong bonding strenth of electron configuration. The magnetic dipolemoment are found to be diamagnetic. The redox reaction processes of complexes were investigated by cyclic voltammetry in aprotic solvent. The redox reaction processes of complexes are turned out to be single or double reaction with respect to one electron diffusion current.