• Polymer Science and Technology
• /
• v.24 no.2
• /
• pp.159-164
• /
• 2013

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.602-604
• /
• 2004

NPB surface morphologies deposited on different temperature substrates were investigated using atomic force microscopy(AFM). It has been found that the NPB morphology turned from island morphology at high temperature(100$^{\circ}C$) to grain morphology at room temperature. To characterize the effect of NPB surface morphology, the devices with the structure of Glass/ITO/NPB/$Alq_3$/Al were fabricated using NPB films deposited at different substrate temperature and their performances were compared.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.233-233
• /
• 2006

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.5
• /
• pp.370-374
• /
• 1991

A high performance fully ion-implanted InP JFET was characterized for high speed switching elements. The switch has an insertion loss of 5.5dB with 31.6dB isolation at 1GHz. This device can effectively swithc a byte-multiplexed 2Gb/s signal and an eye-diagram taken at 2Gb/s shows an error-free eye pattern. Therefore, this device can be used as a switching element for high transmission data rate for monolithic integration of optoelectronic circuit in the long-wavelength region.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.391-402
• /
• 2023

Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.4
• /
• pp.483-491
• /
• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.418-425
• /
• 2019

A piezoelectric ceramic fiber composite (PCFC) was successfully fabricated using $0.69Pb(Zr_{0.47}Ti_{0.53})O_3-0.31[Pb(Zn_{0.4}Ni_{0.6})_{1/3}Nb_{2/3}]O_3$ (PZT-PZNN) for use in small-scale wind energy harvesters. The PCFC was formed using an epoxy matrix material and an array of Ag/Pd-coated PZT-PZNN piezo-ceramic fibers sandwiched by Cu interdigitated electrode patterned polyethylene terephthalate film. The energy harvesting performance was evaluated in a custom-made wind tunnel while varying the wind speed and resistive load with two types of flutter wind energy harvesters. One had a five-PCFC array vertically clamped with a supporting acrylic rod while the other used the same structure but with a five-PCFC cantilever array. Stainless steel (thickness: $50{\mu}m$) was attached onto one side of the PCFC to form the PZT-PZNN cantilever. The output power, in general, increased with an increase in the wind speed from 2 m/s to 10 m/s for both energy harvesters. The highest output power of $15.1{\mu}W$ at $14k{\Omega}$ was obtained at a wind speed of 10 m/s for the flutter wind energy harvester with the PZT-PZNN cantilever array. The results presented here reveal the strong potential for wind energy harvester applications to supply sustainable power to various IoT micro-devices.

• Clean Technology
• /
• v.22 no.3
• /
• pp.203-207
• /
• 2016

Here, we report a novel fabrication technique for patchable organic lasing sheet based on non-volatile liquid organic semiconductors and freestanding polymeric film with high flexibility and patchability. For this work, we have fabricated the second-order DFB grating structure, which leads to surface emission, embedded in the freestanding polymeric film. Using an ultra-violet (UV) curable polyurethaneacrylate (PUA) mixture, the periodic DFB grating structure can be easily prepared on the freestanding polymeric film via a simple UV curing process. Due to unsaturated acrylate remained in the PUA mixture after UV curing, the freestanding PUA film provides adhesive properties, which enable mounting of the patchable organic lasing sheet onto non-flat surfaces with conformal contact. To achieve laser actions in the freestanding resonator structure, a composite material of liquid 9-(2-ethylhexyl)carbazole (EHCz) and organic laser dyes was used as the laser medium. Since the degraded active materials can be easily refreshed by a simple injection of the liquid composite, such a non-volatile liquid organic semiconducting medium has degradation-free and recyclable characteristics in addition to other strong advantages including tunable optoelectronic responses, solvent-free processing, and ultimate mechanical flexibility and uniformity. Lasing properties of the patchable organic lasing sheet were also investigated after mounting onto non-flat surfaces, showing a mechanical tunability of laser emission under variable surface curvature. It is anticipated that these results will be applied to the development of various patchable optoelectronic applications for light-emitting displays, sensors and data communications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.253-253
• /
• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.3
• /
• pp.286-291
• /
• 2023

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.