• Title/Summary/Keyword: Opto-thermal effect

검색결과 8건 처리시간 0.02초

비결정질 실리콘 박막 상에서의 광열 유동을 이용한 액적 조작 (A Droplet-Manipulation Method using Opto-thermal Flows on Amorphous Silicon Thin Film)

  • 이호림;윤진성;김동성;임근배
    • 한국정밀공학회지
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    • 제31권1호
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    • pp.91-96
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    • 2014
  • We present a droplet-manipulation method using opto-thermal flows in oils. The flows are originated from Marangoni and buoyancy effects due to temperature gradient, generated by the adsorption of light on an amorphous silicon thin film. Using this method, we can transport, merge and mix droplets in an extremely simple system. Since the temperature rise during the operation is small, this method can be used for biological applications without the damage on cell viability.

RTA 후속 열처리에 따른 ZnO/Cu/ZnO 박막의 투명전극 및 발열체 특성 연구 (Effect of Rapid Thermal Annealing on the Transparent Conduction and Heater Property of ZnO/Cu/ZnO Thin Films)

  • 이연학;김대일
    • 열처리공학회지
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    • 제36권3호
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    • pp.115-120
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    • 2023
  • ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10-3 Ωcm to 1.18 × 10-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

IPL 처리를 통한 고분자 나노구조의 기계적 특성 향상 연구 (A Study of Mechanical Property Enhancement of Polymer Nanostructure using IPL Treatment)

  • 김도아;김두인;정명영
    • 마이크로전자및패키징학회지
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    • 제27권4호
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    • pp.113-117
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    • 2020
  • 논문에서는 고분자 나노구조 필름의 기계적 물성을 향상하기 위하여 광열효과를 이용한 열처리 공정을 응용하여 나노임프린트로 제작된 고분자 나노구조 필름의 기계적 물성에 미치는 영향을 규명하였다. Hybrid resin과 UV 나노임프린트을 이용하여 저반사 나노구조를 성형하고 IPL (intense pulsed light)를 이용하여 열처리를 수행한 뒤, 제작된 나노구조 필름의 투과율과 내스크래치성을 평가하여 나노구조의 성형성과 기계적 물성의 변화를 관찰하였다. 나노패턴의 특성에 의해서 나노구조의 투과율은 550 nm 파장에서 97.6%로 고투과율의 기능을 확인하였으며, IPL을 이용한 열처리를 진행한 경우 Hotplate를 이용한 열처리보다 경도는 0.51 GPa로, 0.27 GPa로 열처리한 시편에 비해 1.8배 향상하였으며, 동일 실험 조건에서 탄성율은 Hotplate 이용 시 4 GPa에서 IPL 이용 시 5.9 GPa로 1.4배 증가하였다.

SYSTEM TRADE-OFF STUDY AND OPTO-THERMO-MECHANICAL ANALYSIS OF A SUNSHIELD ON THE MSC OF THE KOMPSAT-2

  • Kim, Young-Soo;Lee, Eung-Shik;Woo, Sun-Hee
    • Journal of Astronomy and Space Sciences
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    • 제20권4호
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    • pp.393-402
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    • 2003
  • The Multi-Spectral Camera (MSC) is the payload of KOMPSAT-2 which is designed for earth imaging in optical and near-infrared region on a sun-synchronous orbit. The telescope in the MSC is a Ritchey-Chretien type with large aperture. The telescope structure should be well stabilized and the optical alignment should be kept steady so that best images can be achieved. However, the MSC is exposed to adverse thermal environment on the orbit which can give impacts on optical performance. Solar incidence can bring non-uniform temperature rise on the telescope tube which entails unfavorable thermal distortion. Three ways of preventing the solar radiation were proposed, which were installing external mechanical shield, internal shield, and maneuvering the spacecraft. After trade-off study, internal sun shield was selected as a practical and optimal solution to minimize the effect of the solar radiation. In addition, detailed designs of the structure and sunshield were produced and analyses have been performed. The results were assessed to verify their impacts to the image quality. It was confirmed that the internal sunshield complies with the requirements and would improve image quality.

전자빔 열 표면처리에 따른 TIO 박막의 투명전극 특성 개선 효과 (Advanced Optical and Electrical Properties of TIO Thin Films by Thermal Surface Treatment of Electron Beam Irradiation )

  • 이연학;박민성;김대일
    • 열처리공학회지
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    • 제36권4호
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    • pp.193-197
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    • 2023
  • Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In2O2 (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10-3 Ω-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10-2 Ω-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

급속열처리에 따른 ZTO/Ag/ZTO 박막의 전기적, 광학적 특성 개선 효과 (Effect of Post-deposition Rapid Thermal Annealing on the Electrical and Optical Properties of ZTO/Ag/ZTO Tri-layer Thin Films)

  • 송영환;엄태영;허성보;김대일
    • 열처리공학회지
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    • 제30권4호
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    • pp.151-155
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    • 2017
  • The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

Performance Analysis for Mirrors of 30 cm Cryogenic Space Infrared Telescope

  • Park, Kwi-Jong;Moon, Bong-Kon;Lee, Dae-Hee;Jeong, Woong-Seob;Nam, Uk-Won;Park, Young-Sik;Pyo, Jeong-Hyun;Han, Won-Yong
    • Journal of Astronomy and Space Sciences
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    • 제29권3호
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    • pp.321-328
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    • 2012
  • We have designed a 30 cm cryogenic space infrared telescope for astronomical observation. The telescope is designed to observe in the wavelength range of 0.5~2.1 ${\mu}m$, when it is cooled down to 77 K. The result of the preliminary design of the support structure and support method of the mirror of a 30 cm cryogenic space infrared telescope is shown in this paper. As a Cassegrain prescription, the optical system of a 30 cm cryogenic space infrared telescope has a focal ratio of f/3.1 with a 300 mm primary mirror (M-1) and 113 mm secondary mirror (M-2). The material of the whole structure including mirrors is aluminum alloy (Al6061-T6). Flexures that can withstand random vibration were designed, and it was validated through opto-mechanical analysis that both primary and secondary mirrors, which are assembled in the support structure, meet the requirement of root mean square wavefront error < ${\lambda}/8$ for all gravity direction. Additionally, when the M-1 and flexures are assembled by bolts, the effect of thermal stress occurring from a stainless steel bolt when cooled and bolt torque on the M-1 was analyzed.

디지털 합금 InGaAlAs 다중 양자 우물의 열처리 온도에 따른 발광 특성 (Effect of Annealing Temperature on the Luminescence Properties of Digital-Alloy InGaAlAs Multiple Quantum Wells)

  • 조일욱;변혜령;류미이;송진동
    • 한국진공학회지
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    • 제22권6호
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    • pp.321-326
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    • 2013
  • 디지털 합금(digital alloy) InGaAlAs 다중 양자 우물(multiple quantum wells: MQWs) 구조의 열처리(rapid thermal annealing: RTA) 온도에 따른 발광 특성을 PL (photoluminescence)와 TRPL (time-resolved PL)를 이용하여 분석하였다. $700^{\circ}C$에서 $850^{\circ}C$까지 온도를 변화시켜 RTA한 디지털 합금 MQWs의 PL 결과는 $750^{\circ}C$에서 RTA한 시료가 가장 강한 PL 세기와 가장 좁은 반치폭을 나타내었다. 이것은 $750^{\circ}C$에서 30초 동안 RTA하였을 때 비발광 재결합 센터가 감소하고 가장 매끄러운 경계면이 형성되는 것을 나타낸다. RTA 온도를 $800^{\circ}C$$850^{\circ}C$로 증가하였을 때 PL 피크는 청색편이 하였으며 PL 세기는 감소하였다. PL 피크의 청색편이는 RTA 온도가 증가함에 따라 InGaAs/InAlAs SPS (short-period superlattice)의 경계면에서의 Ga과 Al의 혼합(intermixing)으로 Al 함량이 증가한 것으로 설명되며, PL 세기의 감소는 경계면의 거칠기의 증가와 인듐의 상분리(phase separation)로 인한 비균일 조성(compositional fluctuation)으로 설명된다. RTA 온도를 증가하였을 때 PL 소멸시간은 증가하였으며, 이것은 비발광 재결합 센터(결정 결함)가 감소한 것을 나타낸다. 디지털 합금 InGaAlAs MQWs 시료의 PL 특성은 적절한 RTA 조건에서 현저히 향상되는 것을 확인하였다.