• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.225-228
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• 2005

In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

• Journal of The Korean Digital Architecture Interior Association
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• v.7 no.1
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• pp.1-6
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• 2007

In this study, we fill a person's shoes human knowledge use a computer fast and simple repetition in architecture design. this study are launched from a assumption that a optimized arrangement spaces are able to measure and gauge. but automatic space arrangement program is first step, we have a value that propose a differential cell space and valuation space and process of optimized space arrangement. the merits of this design process are as follows; 1. this program has a advantage high the building-to-land ratio land and business area in space design. 2.this program can design a economy building and calculate rent benefit and calculate cost of construction. 3. this program can adapt for digital GIS. this program can down cost in labor productivity. 5. a layman can design high level. the weak point of this design process are as follows; 1. the design product is simple box shape. 2. this program has a weak in large area and complicated land shape 3. complex use space design are difficult in this program.

• Journal of Korean Society on Water Environment
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• v.27 no.5
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• pp.617-624
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• 2011

In order to confirm the creation of the OH radical which influences to RNO bleaching processes, it experimented using laboratory reactor of dielectric barrier discharge plasma (DBDP). The experiments performed in about 4 kind process variables (diameter of ground electrode, diameter of discharge electrode, diameter of quartz tube and effect of air flow rate) which influence to process. In order to examine optimum conditions of design factors as shown in Box-Behnken experiment design, ANOVA analysis was conducted against four factors. The actual RNO removal at optimized conditions under real design constraints were obtained, confirming Box-Behnken results. Optimized conditions under real design constraints were obtained for the highest desirability at 1, 1 mm diameter of ground and discharge electrode, 6 mm diameter of quartz tube and 5.05 L/min air flow rate, respectively.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2022.04a
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• pp.69-70
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• 2022

The domestic process planning generally relies on calculations based on the construction-standard-production-rate. This method requires trial and error practice during the construction phase to deduce the optimized equipment combination for time and cost. Trial and error during construction can lead to cost overruns and schedule delays. Accordingly, this paper suggests an advanced method for establishing a productivity database based on combinations of equipment and also considering site conditions in order to reduce the timely effort for deducing the optimized equipment combination. For this purpose DES (Discrete Event Simulation) model was developed based on the information provided in the construction-standard-production-rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.19-24
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• 2005

In this paper, the fabrication process of Si pressure sensors utilizing piezoresistive effect was optimized. The efficiency(yield) of the fabrication process for Si piezoresistive pressure sensors was improved by conducting Si anisotrophic etching process after processes of piezoresistors and AI circuit patterns. The position and process parameters for piezoresistors were determined by ANSYS and SUPREM simulators, respectively. The measured thickness of p-type Si piezoresistors from the boron depth-profile measurement was in good agreement with the simulated one from SUPREM simulation. The Si anisotrohic etching process for diaphragm was optimized by adding ammonium persulfate(AP) to tetramethyl ammonium hydroxide (TMAH) solution.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.81-86
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• 2014

The process parameter in optimized KOH alkali activation of soft carbon series coke material in high purity was set with DOE experiments design. The activated carbon was produced by performing the activation process based on the set process parameters. The specific surface area was measured and pore size was analyzed by $N_2$ absorption method for the produced activated carbon. The surface functional group was analyzed by Boehm method and metal impurities were analyzed by XRF method. The specific surface area was increased over 2,000 $m^2/g$ as the mixing ratio of activation agent increased. The micro pores in $5{\sim}15{\AA}$ and surface functional group under 0.4 meq/g were obtained. The contents of the metal impurity in activated carbon which is the factor for reducing the electrochemical characteristics was reduced less than 100 ppm through the cleansing process optimization. The electrochemical characteristics of activated carbon in 38.5 F/g and 26.6 F/cc were checked through the impedance measuring with cyclic voltammetry scan rate in 50~300 mV/s and frequency in 10 mHz ~100 kHz. The activated carbon was made in the optimized activation process conditions of activation time in 40 minutes, mixing ratio of activation agent in 4.5 : 1.0 and heat treatment temperature over $650^{\circ}C$.

• 한국연소학회:학술대회논문집
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• 2003.12a
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• pp.243-250
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• 2003

The present study discuss about numerical methods to analyze design parameters of pyrolysis-melting incineration system. Various numerical methods of different viewpoint are introduced to simulate the performance of the system. Process analysis of the overall system is the beginning procedure of basic design process. Heat and material flow of each element are connected and are influential to each other, hence, an appropriate process modeling should be executed to prevent from unacceptable process design concepts that may results in system failure. Models to simulate performance of each elementary facility generate valuable informations on design and operation parameters, and, derive the basic design concept to be optimized. A pyrolysis model derived from waste bed combustion model is introduced to simulate the mass conversion and heat transfer in the pyrolysis process. CFD(Computational fluid dynamics) is an effective method to optimize the thermal reacting flow in various reactors such as combustor and heat exchanger. Secondary air jets arrangement and the shape of the combustor could be optimized by CFD technology.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.122-127
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• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.633-636
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.