• Journal of Welding and Joining
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• 제20권5호
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• pp.120-126
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• 2002

Ni-5%Al alloy powder is widely used as the bond coating powder to improve the adhesive strength between the substrate and coating. The important properties in the bond coating are the deposition efficiency and surface roughness. In this study, it was tried to optimize the plasma spray parameters to maximize the deposition efficiency and surface roughness. In the first step, spray current and hydrogen gas flow rate were optimized in order to increase the deposition efficiency. In the next step, the seven plasma spray variables were selected and optimized to improve both the deposition efficiency and surface roughness using the Taguchi experimental method. By these optimization, the deposition efficiency was improved from about 10 % at the frist time to 51.2 % by the optimization of spray current and hydrogen gas flow rate and finally to 65.2 % by the Taguchi experimental method. The average surface roughness was increased from about $12.9\mu\textrm{m}$ to $15.4\mu\textrm{m}$.

• 전자공학회논문지A
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• 제30A권12호
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제1권1호
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• Journal of Welding and Joining
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• 제25권4호
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• pp.49-57
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• 2007

The optimization of the cladding parameters was studied to maximize the deposition efficiency in the laser cladding using a low power pulsed Nd:YAG laser. STS304 stainless steel plate and Co alloy powder were used as a substrate and powder for cladding, respectively. The six cladding parameters were selected through preliminary experiments and their effects on the deposition efficiency were analyzed statistically. Experiments were designed and carried out using the Taguchi experimental method using a L18 orthogonal array. It was found from the results of analysis of variance(ANOVA) that the powder feed position and powder feed angle had the most significant effects on the deposition efficiency, but the powder feed rate and laser focal position had nearly no effects. The deposition efficiency could be maximized at 0mm of the powder feed position and 50o of the powder feed angle in the experimental range. From this experimental analysis, a new laser cladding head with 20o of the powder feed angle was designed and manufactured. With a new laser cladding head, the highest deposition efficiency of 12.2% could be obtained.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.206-212
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• 1994

In this paper, We discuss the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time. The factors acted with $POCI_3$ doping are gas flow rate deposition temperature and time etc. Among them the temperature is the most important factor. For the $POCI_3$ flow rate, it should not exceed the resistivity saturation point developed on poly surface by annealing treatment. Therefore, this study suggests the optimum conditions of Poly-silicon treatments with the $POCI_3$ flow rate.

• 한국초전도ㆍ저온공학회논문지
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• 제23권3호
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• pp.41-44
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• 2021

We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIn₅ thin films on MgF₂ substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn₃ impurity phase and misoriented CeCoIn₅, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (00l)-oriented CeCoIn₅ as well as the undesired phases such as CeIn₃, misoriented CeCoIn₅ along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn₅ thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.

• 한국정밀공학회지
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• 제19권8호
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.