Optimization of the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time

온도, 가스량 및 도핑시간변화에 따른 $POCI_3$ 도핑 공정의 최적화

In this paper, We discuss the $POCI_3$ doping process according to the variation of deposition temperature, gas flow rate and doping time. The factors acted with $POCI_3$ doping are gas flow rate deposition temperature and time etc. Among them the temperature is the most important factor. For the $POCI_3$ flow rate, it should not exceed the resistivity saturation point developed on poly surface by annealing treatment. Therefore, this study suggests the optimum conditions of Poly-silicon treatments with the $POCI_3$ flow rate.