• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.128-129
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• 2002

정보, 전산 산업의 발달이 급속하게 이루어짐에 따라 필연적으로 정보의 저장 및 입출력에 관계된 정보저장장치는 용량의 대량화, 입출력 속도의 고속화가 요구된다. 홀로그램을 이용한 정보저장장치는 데이터의 기록·재생의 원리상 체적 홀로그램의 원리를 이용하여 한 점에 대량의 면정보를 저장할 수 있는 페이지 지향적인 메모리(Page-oriented Memory)로써 입출력 방식으로 병렬 데이터 처리방식을 사용하므로 근본적으로 입출력 속도를 초고속화 할 수가 있으며, 기계적인 구동 부를 배제한 시스템이 가능하므로 데이터 접근 시간도 매우 빠르게 할 수 있다. (중략)

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.65-69
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• 2004

The small form factor optical data storage devices are developing rapidly nowadays. Since it is designed for portable and compatibility with flash memory, its components such as disk, head, focusing actuator, and spindle motor should be assembled within 5 m thickness. The thickness of focusing actuator is within 2 mm and the total working range is $+/-100{\mu}m$, with the resolution of less than $1{\mu}m$. Since the thickness is limited tightly, it is hard to place the yoke that closes the magnetic circuit and hard to make strong flux density without yoke. Therefore, Halbach array is adopted to increase the magnetic flux of one side without yoke. The proposed Halbach array type focusing actuator has the advantage of thin actuation structure with sacrificing less flux density than conventional magnetic array. The optical head unit is moved on the swing arm type tracking actuator. Focusing coil is attached to swing arm, and Halbach magnet array is positioned at the bottom of deck along the tracking line, and focusing actuator exerts force by the Fleming's left hand rule. The working range and resolution of focusing actuator are analyzed with FEM and experiment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.102-109
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• 2007

We propose and experimentally demonstrate a ring resonator with sharp U-turns fabricated on a silicon-on-insulator (SOI) substrate; the resonator was designed as a key part of an optical, dynamic data storage device. We discuss the optical properties of the fabricated ring resonator from the viewpoint of equi-frequency-contour behavior in a dispersion space. We successfully characterize its optical characteristics on the basis of photonic crystal physics. It is suggested that the photonic ring resonator will be applicable to optical, dynamic memory devices for optical communication systems.

• Korean Journal of Optics and Photonics
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• v.13 no.6
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• pp.486-492
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• 2002

In this paper. we presented 1 & 2 dimensional minimum mean-squared-error (MMSE) equalization scheme in a digital holographic data storage system to improve bit-error-rate (BER) and to mitigate inter-symbol interference (ISI) which were generated during the data storage and retrieval processes. We showed experimentally for ten data pages retrieved from the holographic storage system that BER and signal-to-noise ratio (SNR) were improved by adopting MMSE equalization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.203-204
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.227-231
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• 2004

Technological advance in information technology has sparked the necessity of small form factor (SFF) optical disk for mobile devices. Small form factor optical disk is highly anticipated to be a next generation storage device because it can be used for a cost-effective way compared with solid state memory. For the application to the 5 mm height small-form-factor optical disk drive, we have presented an optical flying head and swing arm actuator. In this study, we propose a small 1-axis actuator for compensating ficus error and SA due to the variation of cover-layer thickness in the cover-layered small optical disk. The main design issues of the 1-axis actuator are the realization of compact structure and the new support structure of the actuator: Finally, the compensating principle and performance of the 1-axis actuator will be explained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.138-143
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• 2006

We developed a numerical simulator in order to study the Super-RENS/ROM (Super REsolution Near-Field Structure, Read Only Memory) using 3-dimensional FDTD (finite difference time domain) method. The simulation can be performed by three steps. In the first step, we utilized the vector-diffraction theory to calculate the characteristics of incident laser beam from the object-lens to the surface of the disk. At the second step, we fed the calculated result as an input for the main FDTD simulations on the optical layers in the disk structure. After performed the FDTD simulations, we took near-to-far field transformation for the reflected signal, from the surface of the disk to the detector. Finally, we can get reflected signal at the photo-diode. Using this developed simulator, we were able to study about the reading signal from various disk structures as a function of a laser beam position. We calculated reading signals for various pit sizes for Super-ROM structure, and it is found that the simple optical diffraction theory can not explain the reading mechanism of Super-ROM, and more complicated temperature dependent physics must be involved.