Browse > Article
http://dx.doi.org/10.4313/JKEM.2011.24.7.537

Properties of Indium Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition  

Choi, Hak-Soon (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Jeong, Il-Kyo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Shin, Mun-Soo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Kim, Heon-Oh (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Kim, Yong-Soo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.7, 2011 , pp. 537-542 More about this Journal
Abstract
Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.
Keywords
InZnO; Pulsed laser deposition; Electrical/optical characteristic; TCO (transparent conductive oxide);
Citations & Related Records
연도 인용수 순위
  • Reference
1 B. S. Kang, S. E. Ahn, M. J. Lee, G. Stefanovich, K. H. Kim, W. X. Xianyu, C. B. Lee, Y. Park, I. G. Baek, and B. H. Park, Adv. Mater.. 20, 3066 (2008).   DOI
2 Y. Yan, S. J. Pennycook, J. Dai, R. P. H. Chang, A. Wang, and T. J. Marks, Appl. Phys. Lett., 73, 2585 (1998).   DOI
3 D. Craciun, G. Socol, N. Stefan, M. Miroiu, and V. Craciun, Thin Solid Films, 518, 4564 (2010).   DOI
4 S. Tanaka, T. Minami, and H. Nanto, Thin Solid Films, 135, 183 (1986).   DOI
5 T. Minami, S. Takata, T. Kakumu, and H. Sonohara, Thin Solid Films, 270, 22 (1995).   DOI
6 J. Price, P. Y. Hung, T. Rhoad, B. Foran, and A. C. Diebold, Appl, Phy. Lett., 85, 1071 (2004).
7 F. K. Shan, G. X. Liu, B. C. Shin, W. J. Lee, and W. T. Oh, Key Eng. Mater., 308, 368 (2008).
8 M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, L. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater., 19, 3919 (2007).   DOI
9 C .H. Peng and S. B. Desu, J. Am. Ceram. Soc., 77, 929 (1994).   DOI
10 C. H. Peng, S. B. Desu, J. Am. Ceram. Soc., 77, 210 (1994).
11 E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006).   DOI   ScienceOn
12 A. Wang, J. Dai, J. Cheng, M. P. Chudzik, T. J. Marks, R. P. H. Chang, and C. R. Kannewurf, Appl. Phys. Lett., 73, 327 (1998).   DOI