• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Journal of Korean Association for Spatial Structures
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• v.7 no.3 s.25
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• pp.49-55
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• 2007

In this paper, always monitoring system of fiber Bragg Crating(FBG)Sensor is described and FBGs are well suited for measuring the movement in the part of the spatial structure(for example, cable, membrane and so on)under the pressure conditions. In order to measure the movement of long span structure, we need the measurable equipment that takes in many spots to measure. In the result of experiment, the fiber sensors showed good response to the pressure conditions. Therefore, We could calculate the movement of spatial structure and be possible health monitoring of the spatial structure.

• Proceeding of KASS Symposium
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• 2008.05a
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• pp.189-194
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• 2008

The main object of this paper is that it's possible to monitoring the deformation of cable in the tensegrity structure. always monitoring system of Fiber Bragg Grating(FBG)Sensor is described. The measurement of parts on the cable is very important. We make an experiment with measuring deformation of cable in the tensegrity structure to the pressure conditions. In the result of experiment, the fiber sensors showed good response to the pressure conditions. Therefore, We could calculate the deformation of cable structure and be possible health monitoring of the tensegrity structure.

• Journal of IKEEE
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• v.14 no.3
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• pp.244-249
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• 2010

We fabricated optical sensor system that take a measurement particles using a line-CCD in ocean. To measure particles, we used 680nm laser diode which is appropriate. we tested to operate optical system in water tank and ocean. It has performance that detected signal of sensors transfer microprocessor, FPGA as long as move up and down it's motion. The system algorithm also analysis output -pressure, temperature, particle numbers in depth.-For experiment, our particle sensor system has high accuracy counter. therefore, we proposed that a line-CCD is available on optical sensor system in ocean.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.65-73
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• 1994

TO:F($SnO_{2}:F$) thin films were prepared by RF magnetron sputtering system. The dependence of their structural, electrical, and optical properties on deposition conditions such as substrate temperature, working pressure and power was studied. The optimum conditions of TO:F thin film are $SnF_{2}$ content of 15wt.% in target, RF power of 150W, substrate temperature of $150^{\circ}C$ and working pressure of 2mmTr. The resistivity and transmittance at 550nm in visible spectrum of the TO:F film deposited at optimum condition are $9{\times}10^{-4}{\Omega}{\cdot}cm$ and above 85%, respectively. For the films deposited from the target without $SnF_{2}$ and with 15wt.% $SnF_{2}$, the optical bandgaps calculated from the transmittance curves are 3.84 and 3.9eV, respectively. X-ray diffraction patterns showed that TO and TO:F films had tetragonal rutile structure with (101), (200) direction.

• 한국가시화정보학회:학술대회논문집
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• 2002.11a
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• pp.1-6
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• 2002

How is the flow in a rotating impeller. About 35 years have passed since one experimentalist rotating with the impeller. of a huge centrifugal blower made the flow measurements using a hot-wire anemometer (Fowler 1968). Optical measurement methods have great advantages over the intrusive methods especially for the flow measurement in a rotating impeller. One is the optical flow visualization (FV) technique (Senoo, et al., 1968) and the other is the application of laser velocimetry (LV) (Hah and Krain, 1990). Particle image velocimetries (PIVs) combine major features of both FV and LV, and are very attractive due to the feasibility of simultaneous and multi-points measurements (Hayami and Aramaki, 1999). A high-pressure-ratio transonic centrifugal compressor with a low-solidity cascade diffuser was tested in a closed loop with HFC134a gas at 18,000rpm (Hayami, 2000). Two kinds of measurement techniques by image processing were applied to visualize a flow in the compressor. One is a velocity field measurement at the inducer of the impeller using a PIV and the other is a pressure field measurement on the side wall of the cascade diffuser using a pressure sensitive paint (PSP) measurement technique. The PIV was successfully applied for visualization of an unsteady behavior of a shock wave based on the instantaneous velocity field measurement (Hayami, et al., 2002b) as well as a phase-averaged velocity vector field with a shock wave over one blade pitch (Hayami, et al., 2002a. b). A violent change in pressure was successfully visualized using a PSP measurement during a surge condition even though there are still some problems to be overcome (Hayami, et al., 2002c). Both PIV and PSP results are discussed in comparison with those of laser-2-focus (L2F) velocimetry and those of semiconductor pressure sensors. Experimental fluid dynamics (EFDs) are still growing up more and more both in hardware and in software. On the other hand, computational fluid dynamics (CFDs) are very attractive to understand the details of flow. A secondary flow on the side wall of the cascade diffuser was visualized based either steady or unsteady CFD calculations (Bonaiuti, et al.,2002). EFD and CFD methods will be combined to a hybrid method being complementary to each other. Measurement techniques by image processing as well as CFD calculations give a huge amount of data. Then, data mining technique will become more important to understand the flow mechanism both for EFD and CFD.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.4
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• pp.1838-1843
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• 2014

Nanoimprint lithography (NIL) fabrication process is regarded as the main alternative to existing expensive photo-lithography in areas such as micro- and nano-electronics including optical components and sensors, as well as the solar cell and display device industries. Functional patterns, including anti-reflective moth-eye pattern, photonic crystal pattern, fabricated by NIL can improve the overall efficiency of such devices. To successfully imprint a nano-sized pattern, the process conditions such as temperature, pressure, and time should be appropriately selected. In this paper, a cavity-filling process of the moth-eye pattern during the thermal-NIL within the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer, were investigated with three-dimensional finite element analysis. The effects of initial thickness of polymer resist and imprinting pressure on cavity-filling process has been discussed. From the analysis results it was found that the cavity filling can be completed within 100 s, under the pressure of more than 4 MPa.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.