• Proceedings of the Korea Air Pollution Research Association Conference
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• 1999.10a
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• pp.83-84
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• 1999

시정악화나 광화학 스모그를 비롯하여 지구 온난화에 부유 입자상 물질이 미치는 영향 등을 파악하기 위해선 중량농도, 화학적 성분분석 등과 함께 그 입경별 크기 분포도 반드시 고려되어야만 한다. 입경분포 측정을 위하여 다단식 임팩터(Cascade Impactor)나 광학입자계수기(OPC, Optical Particle Counter), Aerosizer, SMPS (Scanning Mobility Particle Sizer), EAA(Electrical Aerosol Analyzer) 등 이주로 사용되고 있다.(중략)

• Journal of the Korean Society for Heat Treatment
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• v.29 no.2
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• pp.62-65
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• 2016

TIO thin films were deposited on the poly-carbonate substrates with RF magnetron sputtering under different sputtering power condition to investigate the influence of deposition rate on the electrical and optical properties of the films. Although, all films have the similar carrier concentration, the films prepared at a lower deposition rate of 4 nm/min show a higher mobility of $5.96cm^2\;V^{-1}S^{-1}$ due to the low surface roughness. In addition, optical transmittance is also influenced by a deposition rate. Based on the figure of merit, it can be concluded that the lower deposition rate effectively enhances the opto-electrical performance of IGZO films for use as transparent conducting oxides in flexible display applications.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.56-59
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• 1991

The polyervstalline $Cu_{0.28}Ag_{0.72}InSe_{4.4}S_{0.6}$ thin films are prepared by vacuum heat treatment of laver, which is deposited by direct resisting vacuum evaporation. From optical absorption spetra, the optical hand gap energy is determined to be 1.5[eV] at room temerature. From electrical method. hole concentration, resistivity and mobility are 9.3*$10^{18}$[$cm^{-3}$], 6*$10^{-2}$[$\Omega$$.$cm], 11.2[$\textrm{cm}^2$/V$.$sec] respectively at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1107-1110
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• 2006

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1500-1502
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• 2001

Plate-type ${\beta}-FeSi_2$ single crystals were grown using $FeSi_2$, Fe, and Si as starting materials by the chemical transport reaction method. The ${\beta}-FeSi_2$ single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the ${\beta}-FeSi_2$ single crystal. The electrical resistivity values was 1.608$\Omega$cm and electron mobility was $3{\times}10^{-1}cm^2/V{\cdot}sec$ at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.373-379
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• 2013

Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

• Journal of Information Display
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• v.10 no.2
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• pp.80-86
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• 2009

The variation of the electrical characteristics of thin-film transistors (TFTs) causes a non-uniform image quality problem, and the differential aging of organic light-emitting diode (OLED) devices causes an image-sticking problem. A video data correction method is proposed herein as an effective solution to the non-uniform electro-optical characteristics of the pixels in activematrix organic light-emitting diode (AMOLED) displays. The results of the simulation that was conducted show that the proposed method successfully senses the electrical characteristics of TFTs and the degradation of OLEDs and effectively compensates for them.