Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characteristics of $Cu_{0.28}Ag_{0.72}InSe_{4.4}S_{0.6}$ Thin Film

$Cu_{0.28}Ag_{0.72}InSe_{4.4}S_{0.6}$ 박막의 제작과 그 특성

  • 박계춘 (목포대학교 전기공학과) ;
  • 정해덕 (목포대학교 전기공학과) ;
  • 조재형 (전남대학교 전자공학과) ;
  • 이진 (목포대학교 전기공학과)
  • Published : 1991.10.01

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Abstract

The polyervstalline $Cu_{0.28}Ag_{0.72}InSe_{4.4}S_{0.6}$ thin films are prepared by vacuum heat treatment of laver, which is deposited by direct resisting vacuum evaporation. From optical absorption spetra, the optical hand gap energy is determined to be 1.5[eV] at room temerature. From electrical method. hole concentration, resistivity and mobility are 9.3*$10^{18}$[$cm^{-3}$], 6*$10^{-2}$[$\Omega$$.$cm], 11.2[$\textrm{cm}^2$/V$.$sec] respectively at room temperature.

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