• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2006.04a
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• pp.55-56
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• 2006

This thesis describes the use of measured aerosol size distributions and size-resolved hygroscopic growth to examine the physical and chemical properties of several particle classes. The primary objective of this work was to investigate the optical and cloud forming properties of a range of ambient aerosol types measured in a number of different locations. The tool used for most of these analyses is a differential mobility analyzer / tandem differential mobility analyzer (DMA / TDMA) system developed in our research group. To collect the data described in two of the chapters of this thesis, an aircraft-based version of the DMA / TDMA was deployed to Japan and California. The data described in two other chapters were conveniently collected during a period when the aerosol of interest came to us. The unique aspect of this analysis is the use of these data to isolate the size distributions of distinct aerosol types in order to quantify their optical and cloud forming properties. I used collected data during the Asian Aerosol Characterization Experiment (ACE-Asia) to examine the composition and homogeneity of a complex aerosol generated in the deserts and urban regions of China and other Asian countries. An aircraft-based tandem differential mobility analyzer was used for the first time during this campaign to examine the size-resolved hygroscopic properties of particles having diameters between 40 and 586 nm. Asian Dust Above Monterey (ADAM-2003) study was designed both to evaluate the degree to which models can predict the long-range transport of Asian dust, and to examine the physical and optical properties of that aged dust upon reaching the California coast. Aerosol size distributions and hygroscopic growth are measured in College Station, TX to investigate the cloud nucleating and optical properties of a biomass burning aerosol generated from fires on the Yucatan Peninsula. Measured aerosol size distributions and size-resolved hygroscopicity and volatility were used to infer critical supersaturation distributions of the distinct particle types that were observed during this period. The predicted CCN concentrations were used in a cloud model to determine the impact of the different aerosol types on the expected cloud droplet concentration. RH-dependent aerosol extinction coefficients are calculated at a wavelength of 550 nm.

• Electronics and Telecommunications Trends
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• v.32 no.6
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.146-147
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• 2003

무선 통신 시스템이 발달하고 정보의 양이 많아짐에 따라 고주파를 이용한 통신 시스템에 대한 수요가 증가하고 있다. 최근 이러한 고주파 통신 시스템을 optical fiber를 이용하여 구현(Radio-on-fiber system)하는 연구가 주목받고 있다. 무선 고주파 통신 시스템에서는 많은 수의 안테나 기지국이 필요하게 되는데 optical fiber를 이용하면 적은 전송 손실로 기지국간의 연결이 가능하게 된다. 안테나 기지국의 구축을 위해서 최근 InP High Electron Mobility Transistor(HEMT)를 이용하여 광 검출을 구현하는연구가 활발히 진행되고 있다. (중략)

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.47-54
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• 1986

Since the wall mobility of bubble magnetic materials havin g the large q (q=Kac/2$\pi$$M_s^2$) like a $YFeO_3$ has been found to be proportional to the wall energy theoretically crystallographical direction dependence of wall energy calculated by the basis on the spin configuration of the bubble wall which lies in the ac plane was compared with the crystallographical direction dependence of wall mobility which was measured by the experiment. The sample was a single crystal of $YFeO_3$ which was cut into plate normal to the C axis and polished t a thickness of about 60${\mu}{\textrm}{m}$ The measurement of the wall mobility was carried out by optical system using the magneto-optic Faraday effect. From the good agreement of the crystallographical direction dependence of wall mobility and will energy it was found that the spin configuration of the bubble wall suggested is fair.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.426-426
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• 2008

ZnO 박막과 Al이 도핑된 ZnO 다결정질 박막을 rf magnetron sputtering 방법을 이용하여 Si(100) 기판과 코닝글라스 기판에 증착하여 박막의 광학적 특성을 Spectro-scopic Ellipsometry (SE, Woollam사)와 UV-VIR-NIR Sphectrophotometry (SP, Varian사)를 사용하여 분석하였다. SE 측정은 입사각도 55도에서 75도까지 5도 간격으로 파장범위 250 - 1700 nm 에서 3 nm 간격으로 측정하였으며, SP 측정은 수직입사로 250-3000 nm 파장범위에서 1 nm 간격으로 투과도와 반사도를 측정하였다. 측정된 데이터들은 Lorentz Oscillator 모델과 Drude free electron 모델이 결합된 분산관계식을 사용하여 전산 맞춤을 하여 분석하였다. ZnO 박막의 optical band gap energy 는 3.3 eV로 측정되었으며, Al 도핑에 따른 자유전하농도가 증가에 의하여 Burstein-Moss 효과에 따르는 optical band gap energy의 증가 거동을 보였다. 또한 자유전하농도 증가에 따라 band edge 부근에서 나타나는 excitonic transition 에 기인하는 유전함수 피크의 broadening이 관찰되었으며, high frequency dielectric constant는 자유 전하농도에 관계없이 3.689${\pm}$0.05 eV 의 값을 가졌다. Drude free electron 모델을 사용하여 plasma frequency를 구하고 이로부터 얻어진 optical mobility 와 Hall mobility를 비교하여 ZnO계 다결정질 박막에서의 결정립계가 이동도에 미치는 영향을 고찰하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2895-2898
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• 2009

The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.235-237
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• 2016

Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (T_av) of 71.7%, resistivity of 6.63 × 10⁻⁵ Ω·cm and Hall mobility of 15.22 cm²V⁻¹s⁻¹.