• Electronic Materials Letters
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• v.14 no.6
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• pp.733-738
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• 2018

Undoped and Mn-doped $In_2O_3$ films were prepared by radiofrequency magnetron sputtering technique. The effects of Mn doping on the structural and optical properties of as-prepared films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped $In_2O_3$ thin film, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealed that the doped Mn ions exist at + 2 oxidation states, substituting for the $In^{3+}$ sites in the $In_2O_3$ lattice. UV-Vis measurements show that the optical band gap $E_g$ decreases from 3.33 to 2.87 eV with Mn doping in $In_2O_3$, implying an increasing sp-d exchange interaction in the film. Our work demonstrates a practical means to manipulate the band gap energy of $In_2O_3$ thin film via Mn impurity doping, and significantly improves the photoelectrochemical activity.

• Journal of Powder Materials
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• v.28 no.1
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• pp.38-43
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• 2021

A high NIR-reflective black pigment is developed by Mn doping of Fe2O3. The pigment powders are prepared by spray pyrolysis, and the effect of the Mn concentration on the blackness and optical properties is investigated. Mn doping into the crystal lattice of α-Fe2O3 is found to effectively change the powder color from red to black, lowering the NIR reflectance compared to that of pure Fe2O3. The pigment doped with 10% Mn, i.e., Fe1.8Mn0.2O3, exhibits a black color with an optical bandgap of 1.3 eV and a Chroma value of 1.14. The NIR reflectance of the prepared Fe1.8Mn0.2O3 black pigment is 2.2 times higher than that of commercially available carbon black, and this material is proven to effectively work as a cool pigment in a temperature rise experiment under near-infrared illumination.

• Journal of the Korean Society of Visualization
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• v.22 no.1
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• pp.18-27
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• 2024

A series of shock wave pulses with Mach number 2.2 of 100, 200, and 300 shocks were applied to lead sulfide (PbS) nanomaterials at intervals of 5 sec per shock pulse. To investigate the crystallographic, electronic, and magnetic phase stabilities, powder X-ray diffractometry (XRD), diffused reflectance spectroscopy (DRS), and vibrating-sample magnetometry (VSM) were employed. The material exhibited a rock salt structure (NaCl-type structure); XRD results indicated that material is monoclinic with space group C121 (5). Further, XRD results showed shifts due to lattice contraction and expansion when material was subjected to shock wave pulses, indicating stable material structure. Based on the data obtained, we believe that the PbS material is a good choice for high-pressure, high-temperature, and aerospace applications due to its superior shock resistance characteristics.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.149-155
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• 1997

We have successfully grown colorless and transparent Rb-doped potassium niobate (KRN) single crystals using the top seeded solution growth(TSSG) technique. In our crystal growth experiments, the Rb doping concentrations within the melt range from 2-15 mol% relative to that of Nb$_2$O5. Atomic absorption measurements indicate that the Rb content in the KRN solid solution is rather low; the Rb segregation coefficient is found to be on the order of 0.05. It is believed that this is due to the relatively much larger Rb+ ionic radius compared to that of K+, rendering it more difficult for Rb to replace K in the KNbO$_3$(KN) host lattice. Preliminary single-pass second harmonic generation (SHG) experimental results indicate that there exists marginal improvement in the phase-matching temperature tolerance of KRN compared to that of pure Kn single crystals.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.92-98
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• 1999

(Mo.W)Si$_2$ composites were fabricated by vacuum hot-pressing elemental Mo, W and Si powders at various temperatures. Elemental Mo, W and Si powders were alloyed in the proper proportions to form solid solutions. The microstructure and properties of these materials was characterized by using x-ray diffraction, optical microscopy, energy dispersive x-ray spectroscopy and Vicker's technique. It was found that tungsten was mainly substituted for Mo atoms, and made a completed solid solution of (Mo.W)Si$_2$ over 1$600^{\circ}C$. The lattice parameters and Vickers hardness increased largely with increasing reaction temperature by the most soluble elements, due to the solid-solution hardening.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.122-122
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• 2003

In recent years, there has been increasing interest in quasi one-dimensional nanostructural systems, because of their numerous potential applications in various areas, such as materials sciences, electronics, optics, magnetism and energy storage. Specifically, zinc oxide (ZnO) is recognized as one of the most promising oxide semiconductor materials, because of its good optical, electrical, and piezoelectrical properties. The ZnO nanorods were synthesized using vapor-solid (VS) mechanism on soda lime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of a Zn powder at 500. As-fabricated ZnO nanorods had an average diameter and length of 40nm and 3$\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The Photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380nm and a green emission at around 500nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.