Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Investigation of Photoelectrochemical Water Splitting for Mn-Doped In2O3 Film

  • Sun, Xianke (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Fu, Xinhe (Department of Railway Police, Railway Police College) ;
  • You, Tingting (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Zhang, Qiannan (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Xu, Liuyang (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Zhou, Xiaodong (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Yuan, Honglei (School of Physics and Telecommunication Engineering, Zhoukou Normal University) ;
  • Liu, Kuili (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
  • Received : 2018.03.26
  • Accepted : 2018.06.17
  • Published : 2018.11.10
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Abstract

Undoped and Mn-doped $In_2O_3$ films were prepared by radiofrequency magnetron sputtering technique. The effects of Mn doping on the structural and optical properties of as-prepared films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped $In_2O_3$ thin film, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealed that the doped Mn ions exist at + 2 oxidation states, substituting for the $In^{3+}$ sites in the $In_2O_3$ lattice. UV-Vis measurements show that the optical band gap $E_g$ decreases from 3.33 to 2.87 eV with Mn doping in $In_2O_3$, implying an increasing sp-d exchange interaction in the film. Our work demonstrates a practical means to manipulate the band gap energy of $In_2O_3$ thin film via Mn impurity doping, and significantly improves the photoelectrochemical activity.

Keywords

Acknowledgement

Supported by : National Natural Science Foundation of China, Natural Science Foundation of Henan Province of China, Zhoukou Normal University

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