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http://dx.doi.org/10.1007/s13391-018-0080-8

Investigation of Photoelectrochemical Water Splitting for Mn-Doped In2O3 Film  

Sun, Xianke (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Fu, Xinhe (Department of Railway Police, Railway Police College)
You, Tingting (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Zhang, Qiannan (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Xu, Liuyang (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Zhou, Xiaodong (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Yuan, Honglei (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Liu, Kuili (School of Physics and Telecommunication Engineering, Zhoukou Normal University)
Publication Information
Electronic Materials Letters / v.14, no.6, 2018 , pp. 733-738 More about this Journal
Abstract
Undoped and Mn-doped $In_2O_3$ films were prepared by radiofrequency magnetron sputtering technique. The effects of Mn doping on the structural and optical properties of as-prepared films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped $In_2O_3$ thin film, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealed that the doped Mn ions exist at + 2 oxidation states, substituting for the $In^{3+}$ sites in the $In_2O_3$ lattice. UV-Vis measurements show that the optical band gap $E_g$ decreases from 3.33 to 2.87 eV with Mn doping in $In_2O_3$, implying an increasing sp-d exchange interaction in the film. Our work demonstrates a practical means to manipulate the band gap energy of $In_2O_3$ thin film via Mn impurity doping, and significantly improves the photoelectrochemical activity.
Keywords
$In_2O_3$; Films; Structure; Photoelectrode;
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