• 한국광학회지
• /
• 제16권3호
• /
• pp.191-195
• /
• 2005

압력이 인가되는 지점에만 장주기 광섬유 격자가 형성되는 광섬유 소자를 제작하였고, 제작된 소자의 특성을 조사하였다. 제작된 소자는 $720\;{\mu}m$ 주기의 격자가 윗면에 형성되어 있는 60 cm 길이의 금속막대와 고무덮개로 구성되어 있으며, 압력이 인가될 때에 압력이 인가된 지점에만 장주기 광섬유 격자가 형성되었고 인가된 지점에 관계없이 동일한 투과특성을 가지는 장주기 광섬유 격자들이 형성되었다. 그리고 제작된 소자의 특성측정을 통하여 무게를 측정할 수 있는 광섬유 로드(Load)센서로 사용 가능함을 보여 주었다.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2013년도 추계학술대회 논문집
• /
• pp.763-764
• /
• 2013

A three-dimensional image capturing device and its signal processing algorithm and apparatus are presented. Three dimensional information is one of emerging differentiators that provides consumers with more realistic and immersive experiences in user interface, game, 3D-virtual reality, and 3D display. It has the depth information of a scene together with conventional color image so that full-information of real life that human eyes experience can be captured, recorded and reproduced. 20 Mega-Hertz-switching high speed image shutter device for 3D image capturing and its application to system prototype are presented[1,2]. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of 20MHz high-speed micro-optical image modulator, so called 'optical resonator'. The high speed image modulation is obtained using the electro-optic operation of the multi-layer stacked structure having diffractive mirrors and optical resonance cavity which maximizes the magnitude of optical modulation[3,4]. The optical resonator is specially designed and fabricated realizing low resistance-capacitance cell structures having small RC-time constant. The optical shutter is positioned in front of a standard high resolution CMOS image sensor and modulates the IR image reflected from the object to capture a depth image (Figure 1). Suggested novel optical resonator enables capturing of a full HD depth image with depth accuracy of mm-scale, which is the largest depth image resolution among the-state-of-the-arts, which have been limited up to VGA. The 3D camera prototype realizes color/depth concurrent sensing optical architecture to capture 14Mp color and full HD depth images, simultaneously (Figure 2,3). The resulting high definition color/depth image and its capturing device have crucial impact on 3D business eco-system in IT industry especially as 3D image sensing means in the fields of 3D camera, gesture recognition, user interface, and 3D display. This paper presents MEMS-based optical resonator design, fabrication, 3D camera system prototype and signal processing algorithms.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2009년도 동계학술발표회 논문집
• /
• pp.385-386
• /
• 2009

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.387.1-387.1
• /
• 2016

Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2001년도 하계학술발표회
• /
• pp.2-3
• /
• 2001

• Transactions on Electrical and Electronic Materials
• /
• 제12권2호
• /
• pp.84-87
• /
• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Journal of the Optical Society of Korea
• /
• 제16권3호
• /
• pp.221-227
• /
• 2012

We propose optical proximity corrections (OPCs) for digital micromirror device (DMD)-based maskless lithography. A pattern writing scheme is analyzed and a theoretical model for obtaining the dose distribution profile and resulting structure is derived. By using simulation based on this model we were able to reduce the edge placement error (EPE) between the design width and the critical dimension (CD) of a fabricated photoresist, which enables improvement of the CD. Moreover, by experiments carried out with the parameter derived from the writing scheme, we minimized the corner-rounding effect by controlling light transmission to the corners of a feature by modulating a DMD.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제11권1호
• /
• pp.40-50
• /
• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• 한국인쇄학회지
• /
• 제30권3호
• /
• pp.23-33
• /
• 2012

We studied simultaneously the electronically written data affected in the use of thermal transfer discs and the recoding strategy between recoding drives for the stable long term preservation of optical discs which are commonly used in an electronic data storage device. The most important thing in the archiving preservation might be a choice of a device, however the use of thermal transfer recording discs is not good for long term data preservation because the thermal effect on the recoding data is critical which means that the data are recorded not under best condition but under bad condition. We inspect the strategies of recoding data from 12 brands of optical discs and drives of 7 brands and it turns out the recoding strategy is needed first for the long term preservation of electronic recording data. Thus, without affecting data quality and deformation of optical discs, the choice of optimal disc and drive in recoding data will be a solution for the long term preservation of recoding data.

• Journal of Electrical Engineering and Technology
• /
• 제7권5호
• /
• pp.784-788
• /
• 2012

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.