• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• 폴리머
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• 제35권5호
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• pp.402-408
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• 2011

$Na^+$-사포나이트(saponite, SPT) 필름의 유연성을 향상시키기 위해 수용성 고분자인 폴리(비닐 알코올)(poly(vinyl alcohol); PVA)을 다양한 함량(0~10 wt%)으로 사용하여 용액 삽입방법을 통해 SPT 하이브리드 필름을 제조하였다. 본 논문에서는 SPT 하이브리드 필름의 열적 광학적 성질, 모폴로지, 및 가스 투과성 등을 조사하였다. PVA 농도에 따른 SPT 하이브리드 필름의 성질들은 X-선 회절도(XRD), 전계방사형 주사전자현미경(FE-SEM), 시차주사 열량계(DSC), 열중량 분석기(TGA), 열기계 분석기(TMA), 자외선-가시광선(UV-vis.) 흡광도기, 및 산소투과($O_2$TR) 측정기 등을 통해 조사하였다. SPT 하이브리드 필름의 성질들은 PVA의 무게% 농도에 따라 많은 영향을 받았으며, 적은 양의 PVA도 SPT 하이브리드 필름의 유연성을 증가시키기에 충분하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.362-362
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• 2012

Graphene-based materials have been gaining the unprecedented academic and industrial applications, due to the unique charge transport as a new kind of 2-dimensional materials. The applications incorporate electronic devices, nonvolatile memories, batteries, chemical sensors, etc. based on the electrical, mechanical, structural, optical, and chemical features newly reported. The current work employs thermal chemical vapor deposition involving H2 and CH4, in order to synthesize the 2-dimensional graphene materials. The qualitative/quantitative characterizations of the synthesized graphene materials are evaluated using Raman spectroscopy and Hall Measurements, In particular, the effect of processing variables is systematically investigated on the formation of graphene materials through statistical design of experiments. The optimized graphene materials will be attempted towards the potential applications to flat-panel displays.

• 한국결정성장학회지
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• 제1권1호
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• pp.1-4
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• 1991

The applicability of $LiNbO_{3}$ as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting $LiNbO_{3}$; the Curie temperature of this material is too low to permit diffusion temperatures much above $1100^{\circ}C$ without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in $LiNbO_{3}$. Crystals of $LiNbO_{3}$ doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of $LiNbO_{3}$ doped crystals were measured at ${\lambda}=.6328$ and $1.32\;$\mu{m}$. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped $LiNbO_{3}$ was $1130^{\circ}C$; that for Mg-doped $LiNbO_{3}$ was $30^{\circ}$ higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg : $LiNbO_{3}$ was $49.3{\pm}0.2mole%\;Li_{2}O$ ; the composition of the undoped and Ti : $LiNbO_{3}$ samples was $48.6{\pm}0.2mole%$. Diffusion of Ti into both Mg-doped and Ti-doped $LiNbO_{3}$ crystals was studied as a function of $Li/NbO_{3}$ ratio and temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.466-466
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• 2013

Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

• 천문학회보
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• 제41권2호
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• pp.61.1-61.1
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• 2016

Black hole (BH) mass is a fundamental quantity to understand BH growth, galaxy evolution, and connection between them. Thus, obtaining accurate and precise BH mass estimates over cosmic time is of paramount importance. The rest-frame UV CIV ${\lambda}1549$ broad emission line is commonly used for BH mass estimates in high-redshift AGNs (i.e., $2{\leq}z{\leq}5$) when single-epoch (SE) optical spectra are available. Achieving correct and accurate calibration for CIV-based SE BH mass estimators against the most reliable reverberation-mapping based BH mass estimates is thus practically important and still useful. By performing multi-component spectral decomposition analysis to obtained high-quality HST UV spectra for the updated sample of local reverberation-mapped AGNs including new HST STIS observations, CIV emission line widths and continuum luminosities are consistently measured. Using a Bayesian hierarchical model with MCMC sampling based on Hamiltonian Monte Carlo algorithm (Stan NUTS), we provide the most consistent and accurate calibration of CIV-based BH mass estimators for the three line width characterizations, i.e., full width at half maximum (FWHM), line dispersion (${\sigma}_{line}$), and mean absolute deviation (MAD), in the extended BH mass dynamic range of log $M_{BH}/M_{\odot}=6.5-9.1$.

• 보존과학회지
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• 제24권
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• pp.43-56
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• 2008

현재 철제유물 강화처리 시 사용하는 아크릴계 수지인 Parabid NAD10은 용제로 VM&P Naphtha만을 사용하고 있다. 그러나 이를 사용하여 강화처리 할 경우 코팅 후의 광택이 높아 전시 및 관람에 불편함을 준다는 문제가 제기되고 있다. 이러한 단점 보완을 위해 대체 용제로 YK-VMP를 선정하여 각 용제별 코팅 특성을 비교 분석하였다. 표면관찰, 박막 두께, 접착력, 접촉각 및 표면에너지, 광택도, 황변실험, EIS 평가 등의 일련의 분석을 통해 용제별 코팅 특성을 비교한 결과, 기존의 VM&P Naphtha를 대신하여 YK-VMP를 사용하여도 강화처리 효과에는 큰 영향을 주지 않으면서도 광택을 더 낮춰주는 효과가 나타나는 것을 확인하였다.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.22-27
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• 1998

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.27-32
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• 2011

In this study, we have investigated the power conversion efficiency of organic solar cells utilizing conjugated polymer/fullerene bulk-hetero junction(BHJ) device structures. We have fabricated poly(3-hexylthiophene)(P3HT), poly[2methoxy-5-(3',7'-dimethyloctyl-oxy)-1-4-phenylenevinylene] as an electron donor, [6,6]-phenyl $C_{61}$ butyric acid methylester(PCBM-$C_{61}$)as an electron acceptor, and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) used as a hole injection layer(HIL), after fabricated active layer, between active layer and metal cathode(Al) deposited LiF interlayer(5 nm). The properties of fabricated organic solar cell(OSC) devices have been analyzed as a function of different thickness. The electrical characteristics of the fabricated devices were investigated by means J-V, fill factor(FF) and power conversion efficiency(PCE). We observed the highest PCEs of 0.628%(MDMO-PPV:PCBM-$C_{61}$) and 2.3%(P3HT:PCBM-$C_{61}$) with LiF inter-layer at the highest thick active layer, which is 1.3times better than the device without LiF inter-layer.