• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.174-175
• /
• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 대한화학회지
• /
• 제63권6호
• /
• pp.453-458
• /
• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• 한국재료학회지
• /
• 제20권5호
• /
• pp.262-266
• /
• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• 한국자기학회지
• /
• 제8권6호
• /
• pp.374-379
• /
• 1998

Mn1-xCrxPt3 합금 박막을 유리기판상에 rf 마그네트론 스퍼터법으로 전이금속(Mn, Cr)과 Pt층을 적층하여 증착한우 열처리함으로써 제조하였다. 제조한 박막들의 소각 및 광각 x-선 회절 분석, 자기 히스테리시스 루우프, 커 스펙트럼을 실온에서 조사했다. 제조한 박막들은 (111)면이 막면에 평행으로 강하게 우선 배향된 AuCu3 형의 규칙합금 구조를 나타냈다. 포화자화는 Cr 치환량(x)이 증가함에 따라 감소하다가 x=0.58 부근에서 영에 가까워진 후 다시 증가하여 x=0.77 이상에서는 거의 일정한 값을 나타냇다. 이것은 페로자성인 MnPt3(x=0)에 Cr을 치환하며, Cr의 자기모멘트가 Mn과 반강자성적으로 결합하여포화자화가 감소하다가 Cr 치환량이 더욱 증가하면 Cr의 기여가 지배적이 되어 다시 증가하기 때문으로 생각된다. MnPt3의 경우에는 자화용이축이 막면에 평행이었으며, Cr 치환량이 증가합에 따라 수직자기이방성이 증가하여 x=0.58 이상에서는 수직자화막이 얻어졌다. 또한, 이 영역에서 Cr 치환량이 증가함에 따라 보자력도 증가하여 x=0.58 이상에서는 수직자화막이 얻어졌다. 또한, 이 영역에서 Cr 치환량이 증가함에 따라 보자력도 증가하여 CrPt3의 경우에는 약 4 kOe의 큰 값을 나타냈다. Cr 치환량에 따른 커 회전각의 변화 추이는 포화지화의 변화 추이와 경향이 유사했다. x=0.77과 x=1의 경우에는 근적외선 영역에서의 커 회전각이 기존의 광자기기록매체인 TbFeCo를 능가했다.

• 한국진공학회지
• /
• 제19권3호
• /
• pp.224-229
• /
• 2010

산소 유량비의 변화가 라디오파 반응성 마그네트론 스퍼터링 방법으로 유리 기판 위에 증착된 $In_2O_3$ 투명 전도막의 특성에 미치는 효과를 조사하였다. 증착 온도는 $400^{\circ}C$로 고정하였으며, 스퍼터링 가스와 반응성 가스로 각각 아르곤과 산소 가스를 사용하였다. 산소 유량비는 공급되는 혼합 가스양에 대한 산소의 유량으로 선택하여 10%, 20%, 30%, 40%, 50%로 조절하였다. 증착된 박막의 광학, 전기, 구조적인 특성은 자외선-가시광 분광기, 홀 측정 장치, X-선 회절장치와 전자주사현미경으로 조사하였다. 산소 유량비 20%로 증착된 $In_2O_3$ 박막은 430~1,100 nm 파장 영역에서 86%의 투과율과 $1.1{\times}10^{-1}{\Omega}cm$의 비저항 값을 나타내었다. 실험 결과는 산소 유량비를 적절히 제어함으로써 최적의 조건을 갖는 투명 전도막을 성장시킬 수 있음을 제시한다.

• Composites Research
• /
• 제36권1호
• /
• pp.48-52
• /
• 2023

섬유 강화 복합재료는 방향성을 가지고 있기 때문에 적층 순서에 따라서 구조물의 기계적인 특성은 매우 달라질 수 있다. 따라서, 상황과 용도에 따른 복합재료 구조물의 적층 설계는 필수적이다. 그러나 제작된 복합재료 구조물의 적층 각도는 제작 환경이나 구조물 형상에 따라 설계 값과 편차를 가지는 경우가 많으며, 이는 구조적 성능에 영향을 끼칠 수 있다. 따라서 구조물의 신뢰성 확보를 위해서는 적층 설계 뿐만 아니라 제작된 복합재료의 적층각에 대한 분석 또한 매우 중요하다. 본 연구에서는 합성곱 신경망(Convolutional neural network; CNN) 기반의 딥러닝(Deep learning)을 이용하여 섬유 강화 복합재료의 실제 단면 이미지로부터 적층 각도를 예측하였다. 여러 적층 각도를 가지는 탄소 섬유 강화 복합재료 시편을 제작하고, 광학 현미경을 이용하여 Micro-scale로 실제 단면을 촬영하였다. 다양한 적층 각도에 따른 복합재료 시편의 단면 이미지 데이터를 이용하여 합성곱 신경망 기반의 딥러닝 모델에 대하여 학습을 수행하였다. 그 결과 높은 정확도로 실제 섬유 강화 복합재료 단면 이미지로부터 적층 각도를 예측할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.130.2-130.2
• /
• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Journal of the Korean Wood Science and Technology
• /
• 제52권3호
• /
• pp.221-233
• /
• 2024

Lignin, a prominent constituent of woody biomass, is abundant in nature, cost-effective, and contains various functional groups, including hydroxyl groups. Owing to these characteristics, they have the potential to replace petroleum-based polyols in the polyurethane industry, offering a solution to environmental problems linked to resource depletion and CO₂ emissions. However, the structural complexity and low reactivity of lignin present challenges for its direct application in polyurethane materials. In this study, Kraft lignin (KL), a representative technical lignin, was fractionated with ethanol, an eco-friendly solvent, and mixed with conventional polyols in varying proportions to produce polyurethane films. The results of ethanol fractionation showed that the polydispersity of ethanol-soluble lignin (ESL) decreased from 3.71 to 2.72 and the hydroxyl content of ESL increased from 4.20 mmol/g to 5.49 mmol/g. Consequently, the polyurethane prepared by adding ESL was superior to the KL-based film, exhibiting improved miscibility with petrochemical-based polyols and reactivity with isocyanate groups. Consequently, the films using ESL as the polyol exhibited reduced shrinkage and a more uniform structure. Optical microscope and scanning electron microscope observations confirmed that lignin aggregation was lower in polyurethane with ESL than in that with KL. When the hydrophobicity of the samples was measured using the water contact angle, the addition of ESL resulted in higher hydrophobicity. In addition, as the amount of ESL added increased, an increase of 7.4% in the residual char was observed, and a 4.04% increase in Tmax the thermal stability of the produced polyurethane was effectively improved.

• 한국재료학회지
• /
• 제30권4호
• /
• pp.204-210
• /
• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.

• 한국결정성장학회지
• /
• 제22권5호
• /
• pp.241-246
• /
• 2012

본 연구에서는 complex citrate-gel method를 이용하여 $Yb3^{3+}$, $Er^{3+}$ 이온이 동시 도핑 된 $SrMoO_4$($SrMoO_4$: $Yb^{3+}/Er^{3+}$)를 성공적으로 합성하였으며, 그 구조적, 광학적 특성을 분석하였다. 980 nm의 근적외선 여기 광 하에서 상기 분말은 530 및 550 nm 부근의 강한 녹색 방출과 670 nm 부근에서의 약한 적색 방출은 $Er^{3+}$ 이온 내의 intra 4f transition $Er^{3+}$($^4F_{9/2}$, $^2H_{11/2}$, $^4S_{3/2}$) ${\rightarrow}$ $Er^{3+}(^4I_{15/2})$에 의한 현상임을 확인하였다. 또한, $Er^{3+}$ 및 $Yb^{3+}$ 이온의 최적 도핑 농도는 각각 2/16 mol%로 조사되었으며 그에 따른 형성 가능한 upconversion 메커니즘에 대하여 논의하였다.