• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1556-1559
• /
• 2005

Indium-tin oxide (ITO) films were deposited by a low-frequency (LF, 100 Hz) magnetron sputtering on glass substrates at the room temperature. The effects of the film thickness on the structural, electrical and optical properties of ITO films were investigated. With the film thickness the films reveal better crystallinity, showing both (222) and (400) pla nes in the XRD pattern. The optical transmittance and the sheet resistance of the films decreased with the increasing thickness. In addition, the electrical properties of ITO films were improved after annealing in a vacuum.

• 반도체디스플레이기술학회지
• /
• 제11권1호
• /
• pp.1-5
• /
• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• Journal of Magnetics
• /
• 제8권4호
• /
• pp.133-137
• /
• 2003

The magnetostatic properties of the as-deposited and annealed at T=300 and 400$^{\circ}C$ Ni films were investigated employing both magneto-optical magnetometer and VSM. The Ni films of 50∼200 nm thicknesses were prepared by DC magnetron sputtering technique. The strong influence of annealing temperature on magnetostatic properties of the studied samples was discovered. For the annealed Ni films, the increase of the coercivity H$_c$ (up to 4 times) in comparison with that of as-deposited samples was revealed. The obtained results were explained by using crystallographic structural data of the samples.

• 한국재료학회지
• /
• 제19권4호
• /
• pp.228-231
• /
• 2009

Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as $2.3{\sim}3.8{\times}10^{-4}/K$ in the ferroelectric temperature region ($45^{\circ}C{\sim}65^{\circ}C$) and $6.0{\times}10^{-4}/K$ in the phase transition temperature region ($65^{\circ}C{\sim}85^{\circ}C$), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

• 한국재료학회지
• /
• 제25권3호
• /
• pp.125-131
• /
• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.93.1-93.1
• /
• 2007

• 한국전기전자재료학회논문지
• /
• 제16권1호
• /
• pp.65-69
• /
• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.168-168
• /
• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Journal of Magnetics
• /
• 제19권1호
• /
• pp.68-71
• /
• 2014

Copper doped Zinc Oxide nanofilms were prepared using a simple and low cost wet chemical method. The microstructures, phase structure, Raman shift and optical absorption spectrum as well as magnetization were investigated for the nanofilms. Room temperature ferromagnetism has been observed for the nanofilms. Structural analyses indicated that the films possess wurtzite structure and there are no segregated clusters of impurity phase appreciating. The results show that the ferromagnetism in Copper doped Zinc Oxide nanofilms is driven either by a carrier or defect-mediated mechanism. The present work provides an evidence for the origin of ferromagnetism on Copper doped Zinc Oxide nanofilms.

• 한국전기전자재료학회논문지
• /
• 제35권2호
• /
• pp.199-201
• /
• 2022