• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Journal of the Korean Chemical Society
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• v.63 no.6
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.374-379
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• 1998

$Mn_1-xCr_xPt_3$ alloy films have been prepared by depositing (Mn, Cr)/Pt multilayers using a rf magnetron sputterer followed by heat treatment. Small and wide angle x-ray diffractometry, magnetic hysteresis loops and Kerr rotation angle spectra of the films have been measured and used to investigate structural, magnetic and magneto-optic properties of the films. The films had a crystal structure of ordered AuCu$_3$ type and the strong preferred orientation of a (111)plane parallel to the film surface. The saturation magnetization of the films was decreased with Cr content reaching almost zero near x=0.58 and then increased for further increasement of Cr content up to x=0.77 over that stayed almost constant. This indicated that Cr atoms were antiferromagnetically coupled with Mn atoms. The magnetic easy axis of MnPt$_3$(x=0) film was parallel to the film surface but those of the films with x$\geq$0.58 increased as Cr content increased reaching about 4 kOe at x=1(CrPt$_3$). The dependence of the Kerr rotation angle on the Cr content was similar to that of the saturation magnetization on the Cr content. The films with x=0.77 and x=1 showed the larger Kerr rotation angle at the wavelengths of near infrared compared to the magneto-optic recording medium, TbFeCo, currently being used.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.224-229
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• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

• Composites Research
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• v.36 no.1
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• pp.48-52
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• 2023

Fiber-reinforced composites have anisotropic material properties, so the mechanical properties of composite structures can vary depending on the stacking sequence. Therefore, it is essential to design the proper stacking sequence of composite structures according to the functional requirements. However, depending on the manufacturing condition or the shape of the structure, there are many cases where the designed stacking angle is out of range, which can affect structural performance. Accordingly, it is important to analyze the stacking angle in order to confirm that the composite structure is correctly fabricated as designed. In this study, the stacking angle was predicted from real cross-sectional images of fiber-reinforced composites using convolutional neural network (CNN)-based deep learning. Carbon fiber-reinforced composite specimens with several stacking angles were fabricated and their cross-sections were photographed on a micro-scale using an optical microscope. The training was performed for a CNN-based deep learning model using the cross-sectional image data of the composite specimens. As a result, the stacking angle can be predicted from the actual cross-sectional image of the fiber-reinforced composite with high accuracy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Journal of the Korean Wood Science and Technology
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• v.52 no.3
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• pp.221-233
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• 2024

Lignin, a prominent constituent of woody biomass, is abundant in nature, cost-effective, and contains various functional groups, including hydroxyl groups. Owing to these characteristics, they have the potential to replace petroleum-based polyols in the polyurethane industry, offering a solution to environmental problems linked to resource depletion and CO₂ emissions. However, the structural complexity and low reactivity of lignin present challenges for its direct application in polyurethane materials. In this study, Kraft lignin (KL), a representative technical lignin, was fractionated with ethanol, an eco-friendly solvent, and mixed with conventional polyols in varying proportions to produce polyurethane films. The results of ethanol fractionation showed that the polydispersity of ethanol-soluble lignin (ESL) decreased from 3.71 to 2.72 and the hydroxyl content of ESL increased from 4.20 mmol/g to 5.49 mmol/g. Consequently, the polyurethane prepared by adding ESL was superior to the KL-based film, exhibiting improved miscibility with petrochemical-based polyols and reactivity with isocyanate groups. Consequently, the films using ESL as the polyol exhibited reduced shrinkage and a more uniform structure. Optical microscope and scanning electron microscope observations confirmed that lignin aggregation was lower in polyurethane with ESL than in that with KL. When the hydrophobicity of the samples was measured using the water contact angle, the addition of ESL resulted in higher hydrophobicity. In addition, as the amount of ESL added increased, an increase of 7.4% in the residual char was observed, and a 4.04% increase in Tmax the thermal stability of the produced polyurethane was effectively improved.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.204-210
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• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.241-246
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• 2012

$Yb^{3+}$, $Er^{3+}$ co-doped $SrMoO_4$ ($SrMoO_4$ : $Yb^{3+}/Er^{3+}$) specimens have been successfully synthesized via the complex citrate-gel method and their structural and optical properties were investigated in detail. Under 980 nm excitation, $SrMoO_4$ : $Yb^{3+}/Er^{3+}$ UC phosphors have been emitted strong green luminescence at 530 and 550 nm with weak red emission around 670 nm corresponding to the intra 4f transitions of $Er^{3+}$ ($^4F_{9/2}$, $^2H_{11/2}$, $^4S_{3/2}$) ${\rightarrow}$ $Er^{3+}$ ($^4I_{15/2}$). The optimal doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ions were verified to 2/16 mol% and a possible upconversion mechanism depending on pump power dependence is studied in detail.