• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.151-152
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• 2007

In this study, the optical porosity of $TiO_2$ films with helical structure deposited by glancing angle deposition (GLAD) were investigated. Helical films are of interest due to their ability to differentiate states of circularly polarized light. We designed and fabricated normal-incidence circular-polarization separator deposited by GLAD (Helical structure). The optical porosity of $TiO_2$ film deposited by helical method can be applied many optical coatings.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.108-110
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• 2009

Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.111-120
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• 2000

Recently, metal oxide films such as MgO or ZrO$_2$ have been studied as buffer layers to fabricate the superconductor with preferred orientation and as diffusion barriers to prevent the reaction between superconductor and metal substrate. In this research, we focused fabrication and characterization of MgO and ZrO$_2$ films on textured metal substrates. We fabricated MgO and ZrO$_2$ films on the Ni metal sheets by sol-gel dipping method. The microstrcures of the films were investigated by SEM and AES analyses. The films were coated with different cycles and dryed at 400$^{\circ}$C and 500$^{\circ}$C . The final films were heat-treated at 700$^{\circ}$C, 800$^{\circ}$C, and 1000$^{\circ}$C, in air atmosphere. We investigated the alignment of MgO and ZrO$_2$ films on Ni metal sheets by XRD and pole figure. The grain growth of metal oxide films was improved by the increase of the drying temperature and annealing temperature. The grain growth was increased with the annealing temperature. The alignment of metal oxide films depended on the thickness.

• Journal of Information Display
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• v.9 no.1
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• pp.26-32
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• 2008

The dependence of optical performances of collimating films such as prism films and pyramid films on the reflecting properties of reflection films were investigated by using a ray tracing technique. The angular distribution of the luminance and the on-axis luminance gain were obtained by using a simple backlight model composed of a reflection film, a virtual flat light source, and a collimating film. Three kinds of reflecting properties were used, which were a perfect Lambertian reflector, a perfect mirror reflector, and a reflector having both diffuse and specular properties. It was found that the on-axis luminance gain was the highest in the simulation where a mirror reflector was used, while the viewing angle was the widest where the Lambertian reflector was used. This result indicates that it is necessary to optimize the simulation condition such as the reflecting properties in order to predict the optical performances of collimating films accurately. Quantitative correlation between the optical characteristics of collimating films and the reflecting properties of reflection films can be used to improve simulation technique for the development and the optimization of collimating films for LCD backlight applications.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.1
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• pp.13-16
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• 2017

$SnO_2$ single layer films and 2 nm thick Ni thin film intermediated $AZO/Ni/SnO_2$ trilayer films were deposited on glass substrate at room temperatures by RF and DC magnetron sputtering and then the optical and electrical properties of the films were investigated to enhance opto-electrical performance of $SnO_2$ single layer films. As deposited $SnO_2$ films show the optical transmittance of 81.8% in the visible wavelength region and a resistivity of $1.2{\times}10^{-2}{\Omega}cm$, while $AZO/Ni/SnO_2$ films show a lower resistivity of $5.8{\times}10^{-3}{\Omega}cm$ and an optical transmittance of 77.1% in this study. Since $AZO/Ni/SnO_2$ films show the higher figure of merit than that of the $SnO_2$ single layer films, it is supposed that the $AZO/Ni/SnO_2$ films can assure high opto-electrical performance for use as a transparent conducting oxide in various display applications.

• Bulletin of the Korean Chemical Society
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• v.29 no.12
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• pp.2521-2524
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.102-105
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• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Journal of the Korean institute of surface engineering
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• v.39 no.1
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.