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http://dx.doi.org/10.4313/TEEM.2012.13.2.102

Effect of Film Thickness on Structural, Electrical, and Optical Properties of Sol-Gel Deposited Layer-by-layer ZnO Nanoparticles  

Shariffudin, S.S. (NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Salina, M. (NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Herman, S.H. (NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Rusop, M. (NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA)
Publication Information
Transactions on Electrical and Electronic Materials / v.13, no.2, 2012 , pp. 102-105 More about this Journal
Abstract
The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.
Keywords
ZnO nanoparticles; Film thickness; Structural properties; Electrical properties; Optical properties;
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1 S. S. Shariffudin, F. S. Farah, S. H. Herman, B. Mahmood, and M. Rusop, Adv.Mater. Res. 364, 149 (2011) [DOI: 10.4028/www. scientific.net/AMR.364.149].   DOI
2 J. H. Lee, K. H. Ko, and B. O. Park, J. Cryst. Growth 247, 119 (2003) [DOI: 10.1016/S0022-0248(02)01970-3].   DOI   ScienceOn
3 Y.-S. Kim, W.-P. Tai, and S.-J. Shu, Thin Solid Films 491, 153 (2005) [DOI: 10.1016/j.tsf.2005.06.013].   DOI   ScienceOn
4 L. Xu, X. Li, Y. Chen, and F. Xu, Appl. Surf. Sci. 257, 4031 (2010) [DOI: 10.1016/j.apsusc.2010.11.170].
5 M. Jung, J. Lee, S. Park, H. Kim, and J. Chang, J. Cryst. Growth 283, 384 (2005) [DOI: 10.1016/j.jcrysgro.2005.06.047].   DOI   ScienceOn
6 Y. Zhang, B. Lin, Z. Fu, C. Liu, and W. Han, Opt. Mater. 28, 1192 (2006) [DOI: 10.1016/j.optmat.2005.08.016]   DOI   ScienceOn
7 S. Mridha and D. Basak, Mater. Res. Bull. 42, 875 (2007) [DOI: 10.1016/j.materresbull.2006.08.019]   DOI   ScienceOn
8 G. Srinivasan, N. Gopalakrishnan, Y. S. Yu, R. Kesavamoorthy, and J. Kumar, Superlattices Microstruct. 43, 112 (2008) [DOI: 10.1016/j.spmi.2007.07.032].   DOI   ScienceOn
9 P. Sagar, P. K. Shishodia, R. M. Mehra, H. Okada, A. Wakahara, and A. Yoshida, J. Lumin. 126, 800 (2007) [DOI: 10.1016/ j.jlumin.2006.12.003].   DOI   ScienceOn
10 S. O'Brien, L. H. K. Koh, and G. M. Crean, Thin Solid Films 516, 1391 (2008) [DOI: 10.1016/j.tsf.2007.03.160].   DOI   ScienceOn
11 A. Van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Phys. Chem. 104, 1715 (2000) [DOI: 10.1021/ jp993327z].   DOI   ScienceOn
12 D. Bao, H. Gu, and A. Kuang, Thin Solid Films 312, 37 (1998) [DOI: 10.1016/S0040-6090(97)00302-7].   DOI   ScienceOn
13 K.-H. Bang, D.-K. Hwang, and J.-M. Myoung, App. Surf. Sci. 207, 359 (2003) [DOI: 10.1016/S0169-4332(03)00005-9].   DOI   ScienceOn
14 E. S. Shim, H. S. Kang, J. S. Kang, J. H. Kim, and S. Y. Lee, App. Surf. Sci. 186, 474 (2002) [DOI: 10.1016/S0169-4332(01)00746-2].   DOI   ScienceOn
15 M. Karaliunas, T. Serevicius, E. Kuokstis, S. Jurš nas, S. Y. Ting, J. J. Huang, and C. C. Yang, Adv. Mater. Res. 222, 86 (2011) [DOI: 10.4028/www.scientific.net/AMR.222.86].   DOI
16 C. Wongchoosuk, K. Subannajui, A. Menzel, I. A. Burshtein, S. Tamir, Y. Lifshitz, and M. Zacharias, J. Phys. Chem. C 115, 757(2011) [DOI: 10.1021/jp110416v].   DOI   ScienceOn
17 J. Sengupta, R. K. Sahoo, K. K. Bardhan, and C. D. Mukherjee, Mater. Lett. 65, 2572 (2011) [DOI: 10.1016// j.matlet.2011.06.021].   DOI   ScienceOn
18 D. C. Kim, B.H. Kong, and H. K. Cho, J. Mater. Sci. 19, 760 (2008) [DOI: 10.1007/s10854-007-9404-4].
19 W. J. Jeong, S. K. Kim, and G. C. Park, Thin Solid Films 506-507, 180 (2006) [DOI: 10.1016/j.tsf.2005.08.213].   DOI   ScienceOn
20 S. M. Hossein Hejazi, F. Majidi, M. Pirhadi Tavandashti, and M. Ranjbar, Mater. Sci. Semicond. Process 13, 267 (2011) [DOI: 10.1016/j.mssp.2010.12.004].
21 M. Bouderbala, S. Hamzaoui, B. Amrani, A. H. Reshak, M. Adnane, T. Sahraoui, and M. Zerdali, Phys. Rev. B: Condens. Matter 403, 3326 (2008) [DOI: 10.1016/j.physb.2008.04.045].   DOI   ScienceOn