• Title/Summary/Keyword: Operational transconductance amplifier(OTA)

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High Frame Rate CMOS Image Sensor with Column-wise Cyclic ADC (컬럼 레벨 싸이클릭 아날로그-디지털 변환기를 사용한 고속 프레임 레이트 씨모스 이미지 센서)

  • Lim, Seung-Hyun;Cheon, Ji-Min;Lee, Dong-Myung;Chae, Young-Cheol;Chang, Eun-Soo;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.52-59
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    • 2010
  • This paper proposes a high-resolution and high-frame rate CMOS image sensor with column-wise cyclic ADC. The proposed ADC uses the sharing techniques of OTAs and capacitors for low-power consumption and small silicon area. The proposed ADC was verified implementing the prototype chip as QVGA image sensor. The measured maximum frame rate is 120 fps, and the power consumption is 130 mW. The power supply is 3.3 V, and the die size is $4.8\;mm\;{\times}\;3.5\;mm$. The prototype chip was fabricated in a 2-poly 3-metal $0.35-{\mu}m$ CMOS process.

High PSRR Low-Dropout(LDO) Regulator (높은 PSRR을 갖는 Low-Dropout(LDO) 레귤레이터)

  • Kim, In-Hye;Roh, Jeong-Jin
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.318-321
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    • 2016
  • As IoT industry are growing fast, The importance of power management system is also being magnified. CMOS High power-supply rejection ratio(PSRR) Low-dropout(LDO) regulator is achieved by the proposed ripple Subtractor, Feed-forward capacitor and OTA in this paper. The LDO is implemented in $0.18-{\mu}m$ CMOS technology. With the proposed structures, in the maximum loading of 40mA, Simulation result achieves PSRR of -73.4dB at 500kHz and PSRR better than -40dB when frequency is below 10MHz with $6.8-{\mu}F$ output capacitor.

An Improved Triangular/Square-Wave VCO Using OTAs

  • Jeong, Jin-Woong;Won, Chang-Su;Chung, Won-Sup
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.172-175
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    • 2008
  • An improved triangular/square-wave VCO using OTAs is presented. It consists of two OTAs, a timing capacitor, and a resistor. A prototype circuit built with commercially available components exhibits less than 0.01% nonlinearity in its current-to-frequency transfer characteristic from 0.2 to 14 kHz and 450 ppm/$^{\circ}C$ temperature coefficient of frequency over $-20^{\circ}C$ to $40^{\circ}$.

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Bridge Resistance Deviation-to-Period Converter for Resistive Biosensors

  • Bae, Cheol-Soo
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.4
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    • pp.195-199
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    • 2014
  • A bridge resistance deviation-to-period (BRD-to-P) converter is presented for interfacing resistive biosensors. It consists of a linear operational transconductance amplifier (OTA) and a current-controlled oscillator (CCO) formed by a current-tunable Schmitt trigger and an integrator. The free running period of the converter is 1.824 ms when the bridge offset resistance is $1k{\Omega}$. The conversion sensitivity of the converter amounts to $3.814ms/{\Omega}$ over the resistance deviation range of $0-1.2{\Omega}$. The linearity error of the conversion characteristic is less than ${\pm}0.004%$.

A Low-Voltage Low-Power Analog Front-End IC for Neural Recording Implant Devices (체내 이식 신경 신호 기록 장치를 위한 저전압 저전력 아날로그 Front-End 집적회로)

  • Cha, Hyouk-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.10
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    • pp.34-39
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    • 2016
  • A low-voltage, low-power analog front-end IC for neural recording implant devices is presented. The proposed IC consists of a low-noise neural amplifier and a programmable active bandpass filter to process neural signals residing in the band of 1 Hz to 5 kHz. The neural amplifier is based on a source-degenerated folded-cascode operational transconductance amplifier (OTA) for good noise performance while the following bandpass filter utilizes a low-power current-mirror based OTA with programmable high-pass cutoff frequencies from 1 Hz to 300 Hz and low-pass cutoff frequencies from 300 Hz to 8 kHz. The total recording analog front-end provides 53.1 dB of voltage gain, $4.68{\mu}Vrms$ of integrated input referred noise within 1 Hz to 10 kHz, and noise efficiency factor of 3.67. The IC is designed using $18-{\mu}m$ CMOS process and consumes a total of $3.2{\mu}W$ at 1-V supply voltage. The layout area of the IC is $0.19 mm^2$.