• Title/Summary/Keyword: Operational Amplifier

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Design of OTA Circuit for Current-mode FIR Filter (Current-mode FIR Filter 동작을 위한 OTA 회로 설계)

  • Yeo, Sung-Dae;Cho, Tae-Il;Shin, Young-Chul;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.7
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    • pp.659-664
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    • 2016
  • In this paper, we suggest operational trans-conductance amplifier(OTA) for current-mode FIR filter that can be used in a digital circuit system requiring high operating frequency and low power consumption. The current-mode signal processing is one of the very innovative design method for a low power consumption system with high operating frequency because it shows a constant power regardless of frequency. From the simulation result using 0.35um CMOS process, when Vdd is 2V, it is confirmed that the proposed circuit showed the dynamic range of the about 1V, about 50% of supply voltage and output current swing of about 0~200uA. Also, the power consumption was evaluated with about 21uW and the active size for an integration was measured with $71um{\times}166um$.

Design of a CMOS Single Bit 3rd Order Delta-Sigma Modulator with Switched Operational Amplifier (스위치드 연산증폭기를 이용한 CMOS 단일비트 3차 델타시그마 변조기 설계)

  • Lee, Han-Ul;Dai, Shi;Yoo, Tai-Kyung;Lee, Keon;Yoon, Kwang-Sub;Lee, Sang-Min
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.8A
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    • pp.712-719
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    • 2012
  • This paper presents Single-bit Third order Delta-Sigma Modulator, which can be applied to the Low speed High resolution ADC in Audio signal Process System. Whereas the Operational Amplifier in modulator consumed static power dissipation in operating, this modulator used Switching on/off techniques, which makes the Power dissipation of the modulator reduced. Also proposed modulator minimizes frequency characteristic variation by optimizing switch position. And this modulator chooses Single-bit type to guarantee stability. The designed ADC went through 0.35um CMOS n-well 1-poly 4-metal process to be a final product, and the final product has shown 17.1mW of power dissipation with 3.3V of Supply Voltage, 6.4MHz of conversion rate. And 84.3dB SNDR and 13.5bit ENOB with 20KHz of input frequency.

Accuracy Improvement of Time Domain Impedance Measurement Using Error Calibration Method (오차 보정 방법을 이용한 시간 영역 임피던스 측정의 정확도 개선)

  • Roh, Hyun-Seung;Cui, Chenglin;Kim, Yang-Seok;Chae, Jang-Bum;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.11
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    • pp.1315-1322
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    • 2012
  • Frequency domain reflectometry diagnoses faults on electric cables by measuring the cable impedance. Time domain impedance measurement technique using an oscilloscope instead of a network analyzer is widely used for electric power cables under harsh environment or powered condition. However, impedance measurement in the time domain shows inaccuracy as the frequency increases due to several parasitic impedances, which results in the poor resolution of fault points. This paper presents the accuracy enhancement technique using a module with an operational amplifier and an error calibration method in the time domain impedance measurements, which is confirmed by comparing the cable impedance measurement results.

Research of an On-Line Measurement Method for High-power IGBT Collector Current

  • Hu, Liangdeng;Sun, Chi;Zhao, Zhihua
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.362-373
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    • 2016
  • The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (uEe) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

Low-Power 4th-Order Band-Pass Gm-C Filter for Implantable Cardiac Pacemaker (이식형 심장 박동 조절 장치용 저 전력 4차 대역통과 Gm-C 필터)

  • Lim, Seung-Hyun;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.1
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    • pp.92-97
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    • 2009
  • Low power consumption is crucial for medical implantable devices. A low-power 4th-order band-pass Gm-C filter with distributed gain stage for the sensing stage of the implantable cardiac pacemaker is proposed. For the implementation of large-time constants, a floating-gate operational transconductance amplifier with current division is employed. Experimental results for the filter have shown a SFDR of 50 dB. The power consumption is below $1.8{\mu}W$, the power supply is 1.5 V, and the core area is $2.4\;mm{\times}1.3\;mm$. The filter was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

Development of Ultrasonic Machine with Force Controlled Position Servo System (가공력 제어 위치 서보 시스템을 이용한 초음파 가공기의 개발)

  • 장인배;이승범;전병희
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.253-261
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    • 2004
  • The machining technology for the brittle materials such as ceramics are applied to the fields of MEMS(micro electromechanical system) by the progress of new machining technologies such as Etching, Diamond machining, Micro drilling, EDM(Electro discharge machining), ECDM(Electro discharge machining), USM(Ultrasonic machining), LBM(Laser beam machining), EBM(Electron beam machining). Especially, the USM technology can be applied to the dieletric brittle materials such as silicon, borosilicate glass, silicon nitride, quartz and ceramics with high aspect ratio. The micro machining system with machining force controlled position servo is developed in this paper and the optimized ultrasonic machining algorithm is constructed by the force controlled position servo control. The load cell is adapted in the force measuring and the servo control algorithm, suit for the ultrasonic machining characteristics, is estabilished with using the PID auto-tunning functions at the PMAC system which is generally adapted in the field of robot industries. The precision force signal amplifier is constructed with high precision operational amplifier AD524. The vacuum adsorption chuck which is made of titanum and internal flow line is engraved, is used in the workpiece fixing. The mahining results by USM shows that there are some deviation between the force command and the actual machining force that the servo control algorithm should be applied in the machining procedures. Therefore, the constant force controlled position servo system is developed for the micro USM system and by the examination machining process in USM, the stable USM system is realized by tracking the average value of machining force.

Design of the Voltage-Controlled Sinusoidal Oscillator Using an OTA-C Simulated Inductor

  • Park, Ji-Mann;Chung, Won-Sup;Park, Young-Soo;Jun, Sung-Ik;Chung, Kyo-Il
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.770-773
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    • 2002
  • Two sinusoidal voltage-controlled oscillators using linear operational transconductance amplifiers are presented in this paper: One is based on the positive-feedback bandpass oscillator model and the other on the negative-feedback Colpitts model. The bandpass VCO consists of a noninverting amplifier and a current-controlled LC-tuned circuit which is realized by two linear OTA's and two grounded capacitors, while the Colpitts VCO consists of an inverting amplifier and a current-controlled LC-tuned circuit realized by three linear OTA's and three grounded capacitors. Prototype circuits have been built with discrete components. The experimental results have shown that the Colpitts VCO has a linearity error of less than 5 percent, a temperature coefficient of less than rm 100 ppm/$^{circ}C$, and a $pm1.5 Hz $frequency drift over an oscillation frequency range from 712Hz to 6.3kHz. A total harmonic distortion of 0.3 percent has been measured for a 3.3kHz oscillation and the corresponding peak-to-peak amplitude was 1V. The experimental results for bandpass VCO are also presented.

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A High Voltage CMOS Rail-to-Rail Input/Output Operational Amplifier with Gain enhancement (전압 이득 향상을 위한 고전압 CMOS Rail-to-Rail 입/출력 OP-AMP 설계)

  • An, Chang-Ho;Lee, Seung-Kwon;Jun, Young-Hyun;Kong, Bai-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.10
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    • pp.61-66
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    • 2007
  • A gain enhancement rail-to-rail buffer amplifier for liquid crystal display (LCD) source driver is proposed. An op-amp with extremely high gain is needed to decrease the offset voltage of the buffer amplifier. Cascoded floating current source and class-AB control block in the op-amp achieve a high voltage gain by reducing the channel length modulation effect in high voltage technologies. HSPICE simulation in $1\;{\mu}V$ 15 V CMOS process demonstrates that voltage gain is increased by 30 dB. The offset voltage is improved from 6.84 mV to $400\;{\mu}V$. Proposed op-amp is fabricated in an LCD source driver IC and overall system offset voltage is decreased by 2 mV.

Design and Analysis of Linear Channel-Selection Filter for Direct Conversion Receiver

  • Jin, Sang-Su;Ryu, Seong-Han;Kim, Hui-Jung;Kim, Bum-Man;Lee, Jong-Ryul
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.4
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    • pp.293-299
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    • 2004
  • An active RC 2nd order Butterworth filter suitable for a baseband channel-selection filter of a direct conversion receiver is presented. The linearity of the 2nd order Butterworth filter is analyzed. In order to improve the linearity of the filter, the operational amplifiers should have a high linear gain and low 3rd harmonic, and the filter should be designed to have large feedback factor. This second order Butterworth filter achieves-14dBV in-channel (400kHz, 500kHz) IIP3, +29dBV out-channel (10MHz, 20.2MHz) IIP3 and 15.6 $nV/\sqrt{Hz}$ input-referred noise and dissipates 10.8mW from a 2.7-V supply. The analysis and experimental results are in good agreement

Chaotic dynamics of the multiplier based Lorenz circuit (곱셈기 기반 로렌츠 회로의 카오스 다이내믹스)

  • Ji, Sung-hyun;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
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    • v.26 no.4
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    • pp.273-278
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    • 2016
  • In this paper, chaotic circuit of the Lorentz system using multipliers, operational amplifiers, capacitor, fixed resistor and variable resistor for control has been designed in a electronic circuit. Through PSPICE program, electrical characteristics such as time waveforms, frequency spectra and phase attractors analyzed. And in the special area ($10{\sim}100k{\Omega}$) of the $500k{\Omega}$ control variable resistor, the circuit showed chaotic dynamics. Also, we implemented the circuit in a electronic hardware system with discrete elements. Measured results of the circuit coincided with simulated data.