• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of the Korea Society of Computer and Information
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• v.25 no.4
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• pp.1-9
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• 2020

In this paper, we propose Dynamic Rank Subsetting (DRAS) technique that enhances the energy-efficiency and the performance of memory system through the data compression. The goal of this technique is to enable a partial chip access by storing data in a compressed format within a subset of DRAM chips. To this end, a memory rank is dynamically configured to two independent sub-ranks. When writing a data block, it is compressed with a data compression algorithm and stored in one of the two sub-ranks. To service a memory request for the compressed data, only a sub-rank is accessed, whereas, for a memory request for the uncompressed data, two sub-ranks are accessed as done in the conventional memory systems. Since DRAS technique requires minimal hardware modification, it can be used in the conventional memory systems with low hardware overheads. Through experimental evaluation with a memory simulator, we show that the proposed technique improves the performance of the memory system by 12% on average and reduces the power consumption of memory system by 24% on average.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.38-49
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• 2006

In this paper, a novel concept based on embedded processor and reconfigurable logic is proposed for efficient manufacturing test and design verification. Unlike traditional gap between design verification and manufacturing test, proposed concept is to combine both design verification and manufacturing test. The semiconductor chip which is using the proposed concept is named "SwToC" and SwToC stands for System with Test On a Chip. SwToC has two main features. First, it has functional verification function on a chip and this function could be made by using embedded processor, reconfigurable logic and memory. Second, it has internal ATE on a chip and this feature also could be made by the same architecture. To evaluate the proposed SwToC, we have implemented SwToC using commercial FPGA device with embedded processor. Experimental results showed that the proposed chip is possible for real application and could have faster verification time than traditional simulation method. Moreover, test could be done using low cost ATE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• ETRI Journal
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• v.25 no.5
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• pp.288-296
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• 2003

In this study, we present a 260k color TFT LCD driver chip set that consumes only 5 mW in the module, which has exceptionally low power consumption. To reduce power consumption, we used many power-lowering schemes in the logic and analog design. A driver IC for LCDs has a built-in graphic SRAM. Besides write and read operations, the graphic SRAM has a scan operation that is similar to the read operation of one row-line, which is displayed on one line in an LCD panel. Currently, the embedded graphic memory is implemented by an 8-transistor leaf cell and a 6-transistor leaf cell. We propose an efficient scan method for a 6-transistor embedded graphic memory that is greatly improved over previous methods. The proposed method is implemented in a 0.22 ${\mu}m$ process. We demonstrate the efficacy of the proposed method by measuring and comparing the current consumption of chips with and without our proposed scheme.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.14-17
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• 2005

In this paper, an automated methodology for generating model parameters considering real manufacturing processes is presented with verified results. In addition, the outcomes of applications to the next generation of flash memory devices using the parameters calibrated from the process specification decision are analyzed. The test vehicle is replaced with a well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for a flash memory device. The calibration errors are less than 5% of a full chip operation, which is acceptable to designers. The results of the calibration are then used to predict the I-V curves and the model parameters of various transistors for the design of flash devices.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.51-57
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• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.1-8
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• 2005

In this paper, a FRAM design style based on PMOS-gating cell structure is described. The memory cell consists of a PMOS access transistor and a ferroelectric capacitor. Its plate is grounded. The proposed scheme employs three novel operating methods: 1) $V_{DD}$ precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore, Because this configuration doesn`t need the on-pitch plate control circuitry, it is effective in realizing cost-effective chip sizes. Implementation for a 2.5-V, 1-Mb FRAM prototype design in a $0.25-{\mu}m$, triple-well technology shows a chip size of $3.22\;mm^{2}$, an access time of 48 ns and an active current of 11 mA. The cell efficiency is 62.52 $\%$. It has gained approximately $20\;\%$ improvement in the cell array efficiency over the conventional plate-driven FRAM scheme.

• The Journal of Korea Robotics Society
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• v.4 no.1
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• pp.1-9
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• 2009

Radio Frequency Identification (RFID) is an automatic identification method. Information such as identification, logistics history, and specification of products are written and stored into the memory of RFID tags (that is, transponders), and retrieved through RF communication between RFID reader device and RFID tags. RFID systems have been applied to many fields of transportation, industry, logistics, environment, etc in order to improve business efficiency and reduce maintenance cost as well. Recently, some research results are announced in which RFID devices are combined with other sensors for mobile robot localization. In this paper, design of multi-protocol baseband for RFID reader device is proposed, and the baseband modem is implemented into SoC (System On a Chip). The baseband modem SoC for multi-protocol RFID reader is composed of several IP (Intellectual Property) blocks such as multi-protocol blocks, CPU, UART(Universal Asynchronous Receiver and Transmitter), memory, etc. As a result, the SoC implemented with FPGA(Field Programmable Gate Array) is applied to real product. It is shown that the size of RFID Reader module designed with the FPGA becomes smaller, and the SoC chip price for the same function becomes cheap. In addition, operation performance could be the same or better than that of the product with no SoC applied.

• The KIPS Transactions:PartD
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• v.9D no.6
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• pp.1097-1104
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• 2002

Recently, with a drop in memory chip price and rapid development of mass storage memory chip technology, research on client-server Database Management Systems has gained wide attention. This Paper discusses the recovery technique in a page-server OODBMS environment. Although most researchers have studied client-server systems, the recovery technique has been a poor researches. In this paper, client transfers only the completed log records to the server and resolves the problems in the current recovery techniques. In addition, the server manages only the execution of completed log records suggesting a simple recover algorithm, Client uses system concurrency, fully, by acting to abort actions and it suggests a page unit recovery technique to reduce time that is required in the whole database.