• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• Tribology and Lubricants
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• v.16 no.2
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• pp.84-90
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• 2000

High Temperature wear behavior of plasma sprayed zirconia coatings containing up to 10 mol% of Fe$_2$O$_3$ were investigated. The wear test results showed that the addition of Fe$_2$O$_3$ particles to zirconia improved the wear resistance and lowered the coefficient of friction. Optimum concentration of Fe$_2$O$_3$ was about 5 mol%. Similar degradation behavior was observed at about 40$0^{\circ}C$ for both zirconia and Fe$_2$O$_3$ added zirconia coatings. The results indicated that stabilization of tetragonal phase and changes in mechanical properties such as hardness and toughness were responsible for tribological behavior of plasma sprayed zirconia contain Fe$_2$O$_3$.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.72-74
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• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.68-72
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• 2009

This study investigated dry etching of acrylic in capacitively coupled $SF_6$, $SF_6/O_2$ and $SF_6/CH_4$ plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of $25{\sim}150\;W$. $SF_6/O_2$ plasma produced higher etch rates of acrylic than pure $SF_6$ and $O_2$ at a fixed total flow rate. 5 sccm $SF_6$/5 sccm $O_2$ provided $0.11{\mu}m$/min and $1.16{\mu}m$/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure $SF_6$ plasma etching. Additionally, mixed plasma of $SF_6/CH_4$ reduced the etch rate of acrylic. 5 sccm $SF_6$/5 sccm $CH_4$ plasma resulted in $0.02{\mu}m$/min and $0.07{\mu}m$/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in $SF_6/O_2$ plasma than in pure $SF_6$ or $SF_6/CH_4$ plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% $O_2$ in $SF_6/O_2$ plasma. Besides the process regime, the RMS roughness of acrylic was approximately $3{\sim}4\;nm$ at different percentages of $O_2$ with a chuck power of 100W RIE in $SF_6/O_2$ plasma etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.93-97
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• 2010

We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.212-212
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• 1999

Ar-O2 분위기의 Plasma 표면 처리된 OPP 의 polymer 위에 약 400$\AA$ 정도로 sputter 코팅된 Al의 부착력에 관하여 연구를 하였다. 금속과 polymer와 같이 성질이 서로 다른 물질이 서로 결합할 때 접착력은 제품의 성능과 신뢰도를 결정하는데 매우 중요한 인자이다. 최근 고분자재료의 표면을 플라즈마 처리 (plasma surface treatment)에 의해 고분자와 금속도포(coating) 층간의 접착력향상에 따라, 증착필름 및 인쇄용 필름 등의 기능도 향상시킬 수 있다. 저온 plasma를 이용한 표면처리는 plastic 재료가 가지고 있는 기본적인 특성을 저해하지 않고, 그 표면 층만을 개량하는 plasma 또는 sputter etching 갚은 electrical discharge 방법은 진공 증착 방식에서 많이 사용되고 있다. 7$\mu\textrm{m}$의 두께 OPP polymer를 10m/min의 속도로 OPP의 표면을 연속 plasma pretreatment를 하였다. 5$\times$10-2torr에서, PEM(Plasma Emission Monitor)를 이용하여 plasma intensity에 따른 Ar/O2비를 변화시키면서 test를 하였다. AFM과 XPS를 이용하여 OPP의 표면분석을 하였다. 이 plasma처리는 기존의 D.C plasma 처리 방식과는 달리 Midium frequency AC voltage hollow cathod 방식으로 plasma를 발생된 high energy plasma 분위기를 만들 수 있다. 이러한 방식은 -cycle일 때 plasma로부터 발생된 전자가 polymer 표면을 bombard 하게 되고, +cycle 일 때 polymer 표면이 cathod 가 되어 active ion에 의해 sputtering 이 된다. 이때 plasma 처리기의 polymer 기판 후면에 magnet를 설치하여 높은 ionization을 발생시켜 처리 효과를 한층 높여 주었다. 이 plasma 처리는 표면 청정화, 표면 etching 이 동시에 행하는 것과 함께 장시간 처리에 의해 표면에서는 미세한 과, C=C기, -C-O-의 극성기의 도입에 의한 표면 개량이 된다는 것을 관찰할 수 있다. OPP polymer 표면을 Ar 100%로 plasma 처리한 경우 C-O, C=O 등의 carbonyl가 발생됨을 알 수 있었다. C-O, C=O 등의 carbynyl polor group이 도입됨에 따라 sputter된 Al의 접착력이 향상됨을 알 수 있으며, TEM 관찰 결과 grain size도 상당히 작아짐을 알 수 있었다.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.37-41
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• 2019

Sheet resistance reduction in the Ag nanowire (NW) coated films is accomplished with slight improvement of optical properties for the application of transparent conducting electrodes by using $O_2$ plasma treatment. The sheet resistance was optimized after 30 seconds $O_2$ plasma treatment, showing the 27 % of maximum decrease of sheet resistance. It is found that the $O_2$ plasma treatment get rid of the residual organic materials at the junction of Ag NWs. However, the Ag NWs may be also snapped by the excessive $O_2$ plasma treatment can showing the collapses of Ag NWs networks. Furthermore, the optical properties such as optical transmittance and haze were monotonically improved with the $O_2$ plasma treatment time until 90 seconds.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.127-128
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• 2009

CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.