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Improvement in Capacitor Characteristics of Titanium Dioxide Film with Surface Plasma Treatment  

Shin, Donghyuk (Department of Materials Science and Engineering, Yonsei University)
Cho, Hyelim (Department of Materials Science and Engineering, Yonsei University)
Park, Seran (Department of Materials Science and Engineering, Yonsei University)
Oh, Hoonjung (BIT Micro Fab Research Center, Yonsei University)
Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.1, 2019 , pp. 32-37 More about this Journal
Abstract
Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.
Keywords
Atomic Layer Deposition; Plasma Oxidation; Plasma Treatment; Titanium Dioxide; Leakage Current; Capacitor;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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