• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.73-73
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• 2008

In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.320-320
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• 2013

Film thickness monitoring with plasma impedance monitoring (PIM) is demonstrated for small area $SiO_2$ RF plasma etching processes in this work. The chamber conditions were monitored by the impedance signal variation from the I-V monitoring system. Moreover, modified principal component analysis (mPCA) was applied to estimate the $SiO_2$ film thickness. For verification, the PIM was compared with optical emission spectroscopy (OES) signals which are widely used in the semiconductor industry. The results indicated that film thickness can be estimated by 1st principal component (PC) and 2nd PC. Film thickness monitoring of small area $SiO_2$ etching was successfully demonstrated with RF plasma harmonic impedance monitoring and mPCA. We believe that this technique can be potentially applied to plasma etching processes as a sensitive process monitoring tool.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1489-1490
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• 2011

The $O_2$ plasma treatment is used as improvement of ITO roughness glass for organic light-emitting diodes and organic photovoltaic cells. This study examined the effect of the electrical properties of OLED according to variation of $O_2$ plasma power. In experiment, we found that the electrical characteristics of device are excellent when the power of $O_2$ plasma is 250 W. And when the power of $O_2$ plasma increases over 250 W, the electrical properties were getting worse. $O_2$ plasma treatment not only prevents the diffusion of indium, a metal constituent, to an organic layer but also plays a significant role as improvement of ITO roughness. By considering organic light-emitting diodes treating $O_2$ plasma, it could contribute to the improvement of the efficiency of the device.

• 한국재료학회지
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• 제12권9호
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• pp.740-746
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• 2002

In this study, the polycarbonate surface was treated by $O_2$/ Ar gases plasma for the enhancement of adhesion with Cu electrode. From the point of view of hydrophilicity and the functionality, the micro-roughness, new functional groups and oxygen content of the polycarbonate surface were increased by the $O_2$/ Ar gases plasma treatment. The Cu films deposited on the as-received polycarbonate were easily detached while, after the$ O_2$/ Ar gases plasma treatment the adhesive Cu films on polycarbonate could be obtained. These results can be explained that the polycarbonate had a hydrophilic surface with uniform micro-roughness and new functional groups by $O_2$/ Ar gases plasma treatment. Therefore,$O_2$/ Ar gases plasma treatment is a promising method for improvement of adhesion between polycarbonate and Cu electrode.

• 한국표면공학회지
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• 제38권3호
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• pp.118-125
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• 2005

Low temperature plasma treatment with different gases and rf powers were performed to improve the adhesion strength between polytetrafluoroethylene(PTFE) and electroless deposited copper. According to the research, $H_2$ plasma having hydrogen radical was more effective in surface polarity modification than $O_2$ plasma due to the defluorination reaction. However, surface roughness of PTFE was more increased with $O_2$ than $H_2$ plasma. PTFE treated with $120W-O_2$ plasma and $250w-H_2$ plasma, consecutively showed rougher surface than single step $250w-H_2$ plasma treated one and more hydrophilic than single step $120W-O_2$ plasma treated one. And it showed 5B tape test grade, which is better adhesion property than 1B or 3B obtained by single step plasma treatment. In addition, adhesion strength between PTFE and Cu deposit is also deeply affected by residual water on its interface.

• 한국재료학회지
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• 제30권11호
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• pp.621-626
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• 2020

This study is aimed at preparing and evaluating the plasma resistance of YAS (Y₂O₃-Al₂O₃-SiO₂) coating layer with crystalline YAG phase contents. For this purpose, YAS frits with controlled phase contents are prepared and melt-coated on sintered Al₂O₃ ceramics. Then, the results of phase analysis of crystalline YAS coating layer are compared to that of YAS frits, and discussed with regard to the plasma resistance of the YAS coating layer. The phase contents of the YAS frit change in a manner different from that of the prepared YAS coating layer, presumably owing to the composition change of YAS frit during the melt-coating process. The plasma resistance of the YAS coating layer is shown to increase with the YAG phase contents in the coating layer. Comparing the weight loss of YAS coating layer with those of commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the prepared YAS coating layer is 8 times higher than that of quartz and 3 times higher than that of Al₂O₃; this layer shows 70 % of the resistance of Y₂O₃.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.460-460
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• 2012

반도체 Device가 Shrink 함에 따라 Pattern Size가 작아지게 되고, 이로 인해 Photo Resist 물질 자체만으로는 원하는 Patterning 물질들을 Plasma Etching 하기가 어려워지고 있다. 이로 인해 Photoresist를 대체할 Hard Mask 개념이 도입되었으며, 이 Hardmask Layer 중 Amorphous Carbon Layer 가 가장 널리 사용되고 지고 있다. 이 Amorphous Carbon 계열의 Hardmask를 Etching 하기 위해서 기본적으로 O2 Plasma가 사용되는데, 이 O2 Plasma 내의 Oxygen Species들이 가지는 등 방성 Diffusion 특성으로 인해, 원하고자 하는 미세 Pattern의 Vertical Profile을 얻는데 많은 어려움이 있어왔다. 이를 Control 하기 인해 O2 Plasma Parameter들의 변화 및 Source/Bias Power 등의 변수가 연구되어 왔으며, 이와 다른 접근으로, N2 및 CO, CO2, SO2 등의 여러 Additive Gas 들의 첨가를 통해 미세 Pattern의 Profile을 개선하고, Plasma Etching 특성을 개선하는 연구가 같이 진행되어져 왔다. 본 논문에서 VLSI Device의 Masking Layer로 사용되는, Carbon 계 유기 층의 Plasma 식각 특성에 대한 연구를 진행하였다. Plasma Etchant로 사용되는 O2 Plasma에 새로운 첨가제 가스인 카르보닐 황화물 (COS) Gas를 추가하였을 시 나타나는 Plasma 내의 변화를 Plasma Parameter 및 IR 및 XPS, OES 분석을 통하여 규명하고, 이로 인한 Etch Rate 및 Plasma Potential에 대해 비교 분석하였다. COS Gas를 정량적으로 추가할 시, Plasma의 변화 및 이로 인해 얻어지는 Pattern에서의 Etchant Species들의 변화를 통해 Profile의 변화를 Mechanism 적으로 규명할 수 있었으며, 이로 인해 기존의 O2 Plasma를 통해 얻어진 Vertical Profile 대비, COS Additive Gas를 추가하였을 경우, Pattern Profile 변화가 개선됨을 최종적으로 확인 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.152-155
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• 2013

$TiO_2$ films were deposited on glass substrates with and without $O_2$ plasma etching by using the RF-magnetron sputtering method. We focused on the effect of surface structure on the photoinduced hydrophilic properties of $TiO_2$ films, fabricated on different surface conditions according to the presence or absence of the $O_2$ plasma treatment on glass substrates. The wettability and photoinduced hydrophilic properties of the $TiO_2$ films were investigated according to the changes in water contact angles under UV light irradiations with a very low intensity of 0.1 $mW/cm^2$. The photoinduced hydrophilic properties on the $TiO_2$ formed above the plasma treated glass were also superior to those on the $TiO_2$ formed above the bare glass. This enhanced $TiO_2$ film has been used practically for self cleaning and anti-fogging glasses.