• Progress in Superconductivity
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• v.10 no.1
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• pp.12-16
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• 2008

In this work, nano size $BaCeO_3$, which is a possible flux pinning medium of melt processed $YBa_{2}Cu_{3}O_x$ superconductor, was synthesized by the conventional solid state reaction method using powders. $BaCeO_3$ and $CeO_2$ were mixed thoroughly using a ball milling for 24 hours and calcined at $1200^{\circ}C$ for 5 hours for the formation $BaCeO_3$ powder. The obtained $BaCeO_3$ powder was attrition milled at various milling times of 60 min, 120 min and 240 min. The $BaCeO_3$ powders of various milling times were mixed with $YBa_{2}Cu_{3}O_x$ powder. Seed melt processed $YBa_{2}Cu_{3}O_x$-$BaCeO_3$ (15wt.%) superconductors were prepared and the superconducting properties were investigated. It was found that $T_c$ of $Y_{1.5}Ba_{2}Cu_{3}O_x$ samples was not significantly affected by $BaCeO_3$ addition, but $J_c$ of samples was increased by $BaCeO_3$ addition. The $J_c$ improvement by fine $BaCeO_3$ powder (120 min attrition-milled) was effective at low magnetic fields less than 2 T.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.112-113
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• 2009

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.494-496
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• 2000

The properties of piezoelectric and dielectric for 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$ - $0.95PbZr_{x}Ti_{1-x}O_{3}$ compositions have been investigated. In the composition of 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$-$0.95PbZr_{0.51}Ti_{0.49}O_{3}$, the values of $k_p$ and ${\varepsilon_{33}}^T/{\varepsilon}_0$ are maximized, but $Q_m$ was minimized ($k_p$=56.5[%], $Q_m$=1130, $d_{33}$=258[pC/N], ${\varepsilon_{33}}^T/{\varepsilon}_0$=1170). The grain size was suppressed and the uniformity of gram was improved at the $1100[^{\circ}C]$. Dielectric constant increase at the Ti rich, but decrease at the Zr rich after poling. Because the dielectric constant after poling is determined by compromising effects between dipole switching and electostriction inducing stress(dielectric constant increasing factor) and dipole rotation to the poling direction (dielectric constant decreasing factor).

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.429-434
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• 2009

The OH($X^2{\Pi},\;{\nu}$"=0, 1) internal state distributions from the reaction of electronically ground state oxygen atoms with HSi$Cl_3$ were measured using laser-induced fluorescence. The ground-state O$(^3P_J)$ atoms with kinetic energies above the reaction barrier were produced by photolysis of N$O_2$ at 355 nm. The OH product revealed strong vibrational population inversion, P(${\nu}$"=1)/P(${\nu}$"=0) = 4.0 ${\pm}$ 0.6, and rotational distributions in both vibrational states exhibit substantial rotational excitations to the limit of total available energy. However, no preferential populations in either of the two $\Lambda$ doublet states were observed from the micropopulations, which supports a mechanism involving a direct abstraction of hydrogen by the atomic oxygen. It was also found that the collision energy between O and HSi$Cl_3$ is effectively coupled into the excitation of the internal degrees of freedom of the OH product ($$ = 0.62, and $<\;f_{rot}>$ = 0.20). The dynamics appear consistent with expectations for the kinematically constrained reaction which supports the reaction type, heavy + light-heavy $\rightarrow$ heavy-light + heavy (H + LH′ $\rightarrow$ HL + H′). The dynamics of oxygen atom collision with HSi$Cl_3$ are discussed in comparison to those with Si$H_4$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.172.1-172.1
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• 2008

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.235-240
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• 2006

We investigated the effect of ZnO filler on the microstructure of $BaO-B_2O_3-ZnO-P_2O_5$ glass system to find an etching mechanism of barrier ribs. The sintering behavior of composites heated in the temperature range $560-600^{\circ}C$ was studied by volumetric shrinkage rate and microstructure. The etching test was carried out in $HNO_3$ solution at $50^{\circ}C$ for 10 min. The volumetric shrinkage of sintered sample decreased with the increased firing temperature because of the formation of two crystals. Glass and ZnO filler react forming the $BaZn_2(PO_4)_2$ crystal phases during the sintering process. Etching phenomenon of sintered samples by $HNO_3$ showed that the $BaZn_2(PO_4)_2$ crystal phase was strongly leached compared to glass matrix, crystal phases and fillers. Therefore, the control of interface by condition of sintering is so important to achieve etching effect in barrier ribs.

• Journal of the Korean Mathematical Society
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• v.46 no.1
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• pp.187-213
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• 2009

For a positive integer k and an arbitrary integer h, the classical Dedekind sums s(h,k) is defined by $$S(h,\;k)=\sum\limits_{j=1}^k\(\(\frac{j}{k}\)\)\(\(\frac{hj}{k}\)\),$$ where $$((x))=\{{x-[x]-\frac{1}{2},\;if\;x\;is\;not\;an\;integer; \atop \;0,\;\;\;\;\;\;\;\;\;\;if\;x\;is\;an\;integer.}\$$ J. B. Conrey et al proved that $$\sum\limits_{{h=1}\atop {(h,k)=1}}^k\;s^{2m}(h,\;k)=fm(k)\;\(\frac{k}{12}\)^{2m}+O\(\(k^{\frac{9}{5}}+k^{{2m-1}+\frac{1}{m+1}}\)\;\log^3k\).$$ For $m\;{\geq}\;2$, C. Jia reduced the error terms to $O(k^{2m-1})$. While for m = 1, W. Zhang showed $$\sum\limits_{{h=1}\atop {(h,k)=1}}^k\;s^2(h,\;k)=\frac{5}{144}k{\phi}(k)\prod_{p^{\alpha}{\parallel}k}\[\frac{\(1+\frac{1}{p}\)^2-\frac{1}{p^{3\alpha+1}}}{1+\frac{1}{p}+\frac{1}{p^2}}\]\;+\;O\(k\;{\exp}\;\(\frac{4{\log}k}{\log\log{k}}\)\).$$. In this paper we give some formulae on the mean value of the Dedekind sums and and Hardy sums, and generalize the above results.

• Journal of the Korean Chemical Society
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• v.41 no.4
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• pp.175-179
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• 1997

Luminescence of $Eu^{3+}$ has been studied in $Sr_{2-2x}Eu_xK_xSnO_4$ with two-dimensional $K_2NiF_4$ structure. The $^5D_o$ → $^7F_o$$Eu^{3+}$ ion represents the J=0 → J=0 transition which is forbidden by a Judd-Ofelt selection rule for electric dipole transition in 4f shell of $Eu^{3+}$ ions. However, the emission line of $^5D_o$ → $^7F_o$$Eu^{3+}$ emission spectra of Sr2-2xEuxKxSnO4$Sr_{2-2x}Eu_xK_xSnO_4$structure around $Eu^{3+}$ ions.