• Progress in Superconductivity
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• 제10권1호
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• pp.12-16
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• 2008

In this work, nano size $BaCeO_3$, which is a possible flux pinning medium of melt processed $YBa_{2}Cu_{3}O_x$ superconductor, was synthesized by the conventional solid state reaction method using powders. $BaCeO_3$ and $CeO_2$ were mixed thoroughly using a ball milling for 24 hours and calcined at $1200^{\circ}C$ for 5 hours for the formation $BaCeO_3$ powder. The obtained $BaCeO_3$ powder was attrition milled at various milling times of 60 min, 120 min and 240 min. The $BaCeO_3$ powders of various milling times were mixed with $YBa_{2}Cu_{3}O_x$ powder. Seed melt processed $YBa_{2}Cu_{3}O_x$-$BaCeO_3$ (15wt.%) superconductors were prepared and the superconducting properties were investigated. It was found that $T_c$ of $Y_{1.5}Ba_{2}Cu_{3}O_x$ samples was not significantly affected by $BaCeO_3$ addition, but $J_c$ of samples was increased by $BaCeO_3$ addition. The $J_c$ improvement by fine $BaCeO_3$ powder (120 min attrition-milled) was effective at low magnetic fields less than 2 T.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 임시총회 및 하계학술연구발표회
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• pp.112-113
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• 2009

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.494-496
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• 2000

The properties of piezoelectric and dielectric for 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$ - $0.95PbZr_{x}Ti_{1-x}O_{3}$ compositions have been investigated. In the composition of 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$-$0.95PbZr_{0.51}Ti_{0.49}O_{3}$, the values of $k_p$ and ${\varepsilon_{33}}^T/{\varepsilon}_0$ are maximized, but $Q_m$ was minimized ($k_p$=56.5[%], $Q_m$=1130, $d_{33}$=258[pC/N], ${\varepsilon_{33}}^T/{\varepsilon}_0$=1170). The grain size was suppressed and the uniformity of gram was improved at the $1100[^{\circ}C]$. Dielectric constant increase at the Ti rich, but decrease at the Zr rich after poling. Because the dielectric constant after poling is determined by compromising effects between dipole switching and electostriction inducing stress(dielectric constant increasing factor) and dipole rotation to the poling direction (dielectric constant decreasing factor).

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.429-434
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• 2009

The OH($X^2{\Pi},\;{\nu}$"=0, 1) internal state distributions from the reaction of electronically ground state oxygen atoms with HSi$Cl_3$ were measured using laser-induced fluorescence. The ground-state O$(^3P_J)$ atoms with kinetic energies above the reaction barrier were produced by photolysis of N$O_2$ at 355 nm. The OH product revealed strong vibrational population inversion, P(${\nu}$"=1)/P(${\nu}$"=0) = 4.0 ${\pm}$ 0.6, and rotational distributions in both vibrational states exhibit substantial rotational excitations to the limit of total available energy. However, no preferential populations in either of the two $\Lambda$ doublet states were observed from the micropopulations, which supports a mechanism involving a direct abstraction of hydrogen by the atomic oxygen. It was also found that the collision energy between O and HSi$Cl_3$ is effectively coupled into the excitation of the internal degrees of freedom of the OH product ($$ = 0.62, and $<\;f_{rot}>$ = 0.20). The dynamics appear consistent with expectations for the kinematically constrained reaction which supports the reaction type, heavy + light-heavy $\rightarrow$ heavy-light + heavy (H + LH′ $\rightarrow$ HL + H′). The dynamics of oxygen atom collision with HSi$Cl_3$ are discussed in comparison to those with Si$H_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.172.1-172.1
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• 2008

• 한국재료학회지
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• 제16권4호
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• pp.235-240
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• 2006

We investigated the effect of ZnO filler on the microstructure of $BaO-B_2O_3-ZnO-P_2O_5$ glass system to find an etching mechanism of barrier ribs. The sintering behavior of composites heated in the temperature range $560-600^{\circ}C$ was studied by volumetric shrinkage rate and microstructure. The etching test was carried out in $HNO_3$ solution at $50^{\circ}C$ for 10 min. The volumetric shrinkage of sintered sample decreased with the increased firing temperature because of the formation of two crystals. Glass and ZnO filler react forming the $BaZn_2(PO_4)_2$ crystal phases during the sintering process. Etching phenomenon of sintered samples by $HNO_3$ showed that the $BaZn_2(PO_4)_2$ crystal phase was strongly leached compared to glass matrix, crystal phases and fillers. Therefore, the control of interface by condition of sintering is so important to achieve etching effect in barrier ribs.

• 대한수학회지
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• 제46권1호
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• pp.187-213
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• 2009

For a positive integer k and an arbitrary integer h, the classical Dedekind sums s(h,k) is defined by $$S(h,\;k)=\sum\limits_{j=1}^k\(\(\frac{j}{k}\)\)\(\(\frac{hj}{k}\)\),$$ where $$((x))=\{{x-[x]-\frac{1}{2},\;if\;x\;is\;not\;an\;integer; \atop \;0,\;\;\;\;\;\;\;\;\;\;if\;x\;is\;an\;integer.}\$$ J. B. Conrey et al proved that $$\sum\limits_{{h=1}\atop {(h,k)=1}}^k\;s^{2m}(h,\;k)=fm(k)\;\(\frac{k}{12}\)^{2m}+O\(\(k^{\frac{9}{5}}+k^{{2m-1}+\frac{1}{m+1}}\)\;\log^3k\).$$ For $m\;{\geq}\;2$, C. Jia reduced the error terms to $O(k^{2m-1})$. While for m = 1, W. Zhang showed $$\sum\limits_{{h=1}\atop {(h,k)=1}}^k\;s^2(h,\;k)=\frac{5}{144}k{\phi}(k)\prod_{p^{\alpha}{\parallel}k}\[\frac{\(1+\frac{1}{p}\)^2-\frac{1}{p^{3\alpha+1}}}{1+\frac{1}{p}+\frac{1}{p^2}}\]\;+\;O\(k\;{\exp}\;\(\frac{4{\log}k}{\log\log{k}}\)\).$$. In this paper we give some formulae on the mean value of the Dedekind sums and and Hardy sums, and generalize the above results.

• 대한화학회지
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• 제41권4호
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• pp.175-179
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• 1997

2차원적 $K_2NiF_4$형 구조를 갖는 $Sr_{2-2x}Eu_xK_xSnO_4$의 주격자 안에 존재하는 Eu3+ 이온의 luminescence에 대한 연구를 수행하였다. $Eu^{3+}$ 이온의 $^5D_o$ → $^7F_o$ 전이에 의한 방출선은 J=0 → J=0 전이로써 $Eu^{3+}$ 이온의 4f 껍질에서 전기 이중극자 전이에 대한 Judd-Ofelt 선택규칙(selection rule)에 의하여 금지된 전이이다. 그러나 $Sr_{2-2x}Eu_xK_xSnO_4$의 Eu3+ 이온의 방출 스펙트라에서는 $^5D_o$ → $^7F_o$$^5D_o$ → $^7F_o$