• 제목/요약/키워드: Non-thermal Plasma

검색결과 231건 처리시간 0.039초

실린더형 무성방전을 이용하여 메탄올과 에탄올로부터 수소발생 특성 (Characteristics of Hydrogen Generation from Methanol and Ethanol using Cylindrical Barrier Discharge)

  • 박재윤
    • 조명전기설비학회논문지
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    • 제24권8호
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    • pp.32-39
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    • 2010
  • 오늘날 화석연료의 다량 사용에 의한 환경오염이 지구온난화를 가속시키고 기상이변을 일으키며 지구생태계에 심각한 영향을 미치고 있다. 수소는 이러한 환경문제를 근본적으로 해결해 줄 지속 가능한 그린에너지로 생각되고 있다. 본 연구는 결합구조가 다른 메탄올 및 에탄올의 개질을 통한 수소발생을 위해 실린더형 배리어 방전형의 반응기를 제작하였다. 반응기에 인가되는 고전압의 크기, 메탄올 및 에탄올 농도 및 캐리어 가스(N2) 유량 등의 변화에 따른 반응기의 방전특성과 수소발생 특성을 측정하고 화학구조에 따른 수소발생 영향을 분석하였다. 수소발생은 인가전압의 증가에 따라 선형적으로 증가하였고 메탄올의 경우가 많았다. 이는 메탄올과 에탄올의 결합구조와 관련이 있는 것으로 생각된다. 수소발생 에너지효율은 에탄올의 경우 인가전압이 증가하여 방전전력이 증가할수록 전체적으로 감소하지만 메탄올의 경우 전압 22[kV](peak-to-peak)를 인가한 경우 가장 에너지 효율이 높게 나타났다.

알칼리 이온 교환 Y-제올라이트의 NOx 전환에 대한 촉매 특성 및 반응성 (Characterization and the Catalytic Properties of Alkali- Exchanged Y-Zeolites on NOx Conversion)

  • 이창섭;이경희
    • 한국가스학회지
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    • 제9권2호
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    • pp.50-55
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    • 2005
  • 본 논문에서는 알칼리 금속 이온 교환된 Y-제올라이트를 합성하여 그 성분과 구조를 여러 가지 분석법을 이용하여 확인하였으며, NOx전환 반응에 대하여 비열 플라즈마 기술과 결합한 이들의 촉매 능력에 대한 시험을 하였다. 합성된 LiY NaY KY, CsY의 NOx환원에 대한 반응성을 $100^{\circ}C$에서 $350^{\circ}C$의 온도 범위에서 NOx미터로 측정하였다. $150^{\circ}C$에서 촉매의 초기 반응성은 LiY < KY < NaY < CsY의 순으로 증가하였다. CsY와 NaY의 반응성은 온도에 따라 증가하다가 $200^{\circ}C$에서 최대에 도달하였고 그 이상의 온도에서는 오히려 감소하였다. KY의 반응성은 $200^{\circ}C$까지는 같은 수준을 유지하다가 그 이상의 온도에서는 감소한 반면 LiY의 반응성은 온도가 올라감에 따라 계속 감소하였다. 알칼리 금속 계열 중에서 반응성이 가장 좋은 CsY촉매는 $170{\~}220^{\circ}C$의 온도범위에서 $80\%$의 NOx 전환율을 나타내었다.

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Characterization of zinc tin oxide thin films by UHV RF magnetron co-sputter deposition

  • Hong, Seunghwan;Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.307.1-307.1
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    • 2016
  • Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

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펨토초 레이저에 의한 투명 유리내부 미세가공특성 (Micromachining Characteristics inside Transparent Materials using Femtoseocond Laser Pulses)

  • 남기곤;조성학;장원석;나석주;황경현;김재구
    • 한국정밀공학회지
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    • 제23권5호
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    • pp.190-196
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    • 2006
  • Transparent materials are widely used in the fields of optic parts and bio industry. We have experiment to find out the characteristics of the micromachining inside transparent materials using femtosecond laser pulses. With its non-linear effects by very high peak intensity, filament (plasma channel) was formed by the cause of the self-focusing and the self-defocusing. Physical damage could be found when the intensity is high enough to give rise to the thermal stress or evaporation. At the vicinity of the power which makes the visible damage or modification, the structural modification occurs with the slow scanning speed. According to the polarization direction to the scanning direction, the filament quality is quite different. There is a good quality when the polarization direction is parallel to the scanning direction. For fine filament, we could suggest the conditions of the high numerical aperture lens, the short shift of focusing point, the low scanning speed and the low power below 20 mW. As the examples of optics parts, we fabricated the fresnel zone plate with the $225{\mu}m$ diameter and Y-bend optical wave guide with the $5{\mu}m$ width.

이중 베리어 방전 반응기를 사용한 $NO_x$ 제거에 관한 연구 (A Study on the Double Dielectric Barrier Discharge for $NO_x$ reduction)

  • 김동욱;김응복;정영식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2182-2185
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    • 1999
  • In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

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포토 리소그래피 공정을 위한 Ti(10 nm)-Buffered층 위에 직접 성장된 고품질 무전사 단층 그래핀 공정 (High Quality Non-Transfer Single-Layer Graphene Process Grown Directly on Ti(10 nm)-Buffered Layer for Photo Lithography Process)

  • 오거룡;한이레;엄지호;윤순길
    • 한국전기전자재료학회논문지
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    • 제34권1호
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    • pp.21-26
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    • 2021
  • Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

원자층증착 기술: 개요 및 응용분야 (Atomic Layer Deposition: Overview and Applications)

  • 신석윤;함기열;전희영;박진규;장우출;전형탁
    • 한국재료학회지
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    • 제23권8호
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    • pp.405-422
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    • 2013
  • Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

Electrically conductive nano adhesive bonding: Futuristic approach for satellites and electromagnetic interference shielding

  • Ganesh, M. Gokul;Lavenya, K.;Kirubashini, K.A.;Ajeesh, G.;Bhowmik, Shantanu;Epaarachchi, Jayantha Ananda;Yuan, Xiaowen
    • Advances in aircraft and spacecraft science
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    • 제4권6호
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    • pp.729-744
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    • 2017
  • This investigation highlights rationale of electrically conductive nano adhesives for its essential application for Electromagnetic Interference (EMI) Shielding in satellites and Lightning Strike Protection in aircrafts. Carbon Nano Fibres (CNF) were functionalized by electroless process using Tollen's reagent and by Plasma Enhanced Chemical Vapour Deposition (PECVD) process by depositing silver on CNF. Different weight percentage of CNF and silver coated CNF were reinforced into the epoxy resin hardener system. Scanning Electron Microscopy (SEM) micrographs clearly show the presence of CNF in the epoxy matrix, thus giving enough evidence to show that dispersion is uniform. Transmission Electron Microscopy (TEM) studies reveal that there is uniform deposition of silver on CNF resulting in significant improvement in interfacial adhesion with epoxy matrix. There is a considerable increase in thermal stability of the conductive nano adhesive demonstrated by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Four probe conductivity meters clearly shows a substantial increase in the electrical conductivity of silver coated CNF-epoxy composite compared to non-coated CNF-epoxy composite. Tensile test results clearly show that there is a significant increase in the tensile strength of silver coated CNF-composites compared to non-coated CNF-epoxy composites. Consequently, this technology is highly desirable for satellites and EMI Shielding and will open a new dimension in space research.

콜드 플라즈마 처리를 이용한 분유와 양파분말 살균 (Cold Plasma Treatment Application to Improve Microbiological Safety of Infant Milk Powder and Onion Powder)

  • 오영지;이한나;김정은;이석훈;조형용;민세철
    • 한국식품과학회지
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    • 제47권4호
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    • pp.486-491
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    • 2015
  • 분유 분말의 C. sakazakii와 양파 분말의 B. cereus의 포자를 저해하는데 있어 가장 효과적인 플라즈마 형성 가스는 각각 He-$O_2$와 He이었다. 분유 분말에 대한 콜드 플라즈마 처리시간이 길어질수록 그리고 형성 전력이 높아질수록 C. sakazakii의 저해도가 커졌으며, 900W, 40분 처리시 가장 큰 저해율을 나타내었다. 양파 분말에 접종된 B. cereus 포자는 콜드 플라즈마 단독 처리와 마이크로파와 병합된 콜드 플라즈마 처리에 대하여 강한 저항력을 가지고 있었으나 열처리($90^{\circ}C$, 1분)를 두 형태의 플라즈마 처리에 선병합시켰을 때 약 90%가 저해되었다. 병합 처리한 결과, 각각의 방법을 단독으로 처리한 것보다 병합 처리시 B. cereus 포자의 저해율(약 1.0 log spores/g)이 높아졌다. 본 연구는 분체 식품에 존재하는 식중독 균의 효율적인 살균 방법을 제시하였고, 분체 식품의 새로운 살균 공정으로서의 콜드 플라즈마의 적용 가능성을 보여주었다.

이온 빔 조사된 SiNx 박막의 전기 광학적 특성에 관한 연구 (Investigation on EO Characteristics of SiNx Thin Film Irradiated by Ion-beam)

  • 이상극;오병윤;김병용;한진우;김영환;옥철호;김종환;한정민;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.429-429
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    • 2007
  • For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

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