• 제목/요약/키워드: Non-punch through

검색결과 39건 처리시간 0.021초

소재의 안전전단을 위한 비파괴 압입 및 소형펀치 시험법 연구 (A Study of Non-destructive Indentation and Small Punch Tests for Monitoring Materials Reliability)

  • 옥명렬;주장복;이정환;안정훈;남승훈;이해무;권동일
    • 한국가스학회:학술대회논문집
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    • 한국가스학회 1997년도 추계학술발표회 논문집
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    • pp.78-85
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    • 1997
  • Indentation and small punch tests are very powerful methods to monitor the materials reliability since they are very simple, easy and almost non-destructive. First, recently-developed continuous indentation test can provide the more material properties such as hardness, elastic modulus, yield strength, work-hardening exponent, etc., than the conventional hardness test. In our study, the true stress-strain curve was derived from the indentation load-depth curve for spherical indentation. In detail, the strain was able to be obtained from plastic depth/contact radius ratio, and the flow stress was from mean contact pressure through the analysis of elastic-plastic indentation stress field. Secondly, the small punch test was studied to evaluate the fracture toughness and defomation properties such as elastic modulus and yield strength. Like the indentation test, this test can be applied without severe damage of the target structure.

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턴-오프 시 PT-IGBT의 애노드 전압 강하 모델링 (Modeling of Anode Voltage Drop for PT-IGBT at Turn-off)

  • 류세환;이호길;안형근;한득영
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.23-28
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    • 2008
  • In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

고전압 GCT(Gate Commutated Thyristor) 소자 설계 (A Novel Design for High Voltage RC-GCTs)

  • 장창리;김상철;김은동;김형우;서길수;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.312-315
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    • 2003
  • Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

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전계제한테와 측면 유리 절연막 사용한 전력용 p-n 접합 소자의 항복 특성 연구 (A study on the breakdown characteristics of power p-n junction device using field limiting ring and side insulator wall)

  • 허창수;추은상
    • 대한전기학회논문지
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    • 제45권3호
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    • pp.386-392
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    • 1996
  • Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

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PT-IGBT의 온도에 따른 과도특성해석 (Transient Analysis of PT-IGBT with Different Temperature)

  • 이호길;류세환;이용국;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.25-28
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    • 2000
  • In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

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An Inherent Zero-Voltage and Zero-Current-Switching Full-Bridge Converter with No Additional Auxiliary Circuits

  • Wang, Jianhua;Ji, Baojian;Wang, Hongbo;Chen, Naifu;You, Jun
    • Journal of Power Electronics
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    • 제15권3호
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    • pp.610-620
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    • 2015
  • An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

자동차용 허브 클러치의 유동제어에 관한 실험적 연구 (Experimental Investigation on the Flow Control of Hub Clutch for Automobile)

  • 박종남;김동환;김병민
    • 소성∙가공
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    • 제11권5호
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    • pp.430-438
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    • 2002
  • This paper suggests the new technology to control metal flow in orther to change of the cold forging from conventional deep drawing forming. This technology can be summarized the complex forming, which consists of bulk forming and sheet forming, and multi-action forging, which be performed double action press. The proposed technology is applied to hub clutch model which is part of auto-transmission for automobile. The purpose of this study is to investigate the material flow behavior of hub clutch through control the relative velocity ratio and the stroke of mandrel and punch using the flow forming technique. First of all, the finite element simulations are applied to analyse optimal process conditions to prevent flow defect(necking defect etc.) from non-uniform metal flow, then the results are compared with the plasticine model material experiments. The punch load for real material is predict from similarity law. Finally, the model material experiment results are in good agreement with the FE simulation ones.

플라스틱 중공부품의 일체화 성형을 위한 인몰드 펀칭 공정기술에 관한 연구 (A study on the technology of in-mold punching process for integrated hole piercing of plastic hollow parts)

  • 이성희
    • Design & Manufacturing
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    • 제15권4호
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    • pp.1-7
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    • 2021
  • A study on in-mold punching technology for hole piercing during molding of hollow plastic parts was conducted. Considering the non-linearity of the HDPE plastic material, mechanical properties were obtained according to the change in temperature and load speed. A standard specimen for the in-mold punching test was designed to implement the in-mold punching process, and the specimen was obtained through injection molding. In order to analyze the influence of process variables during in-mold punching, an in-mold punching mold capable of controlling variables such as temperature and support pressure of the specimen was designed and manufactured. Mold heating characteristics were confirmed through finite element analysis, and punching simulations for changes in process conditions were performed to analyze punching characteristics and reflected in the experiment. Through simulations and experiments, it was found that the heating temperature, punch shape, punching speed, and pressure of the back side of the specimen were very important during in-mold punching of HDPE materials, and optimal conditions were acquired within a given range.

텅스텐 중합금의 부피분율, 입자형상에 따른 단열전단밴드 형성 연구 (The Effects of Volume Ratio and Shape on the Formation of Adiabatic Shear Band in WHA)

  • 이승우;송흥섭;문갑태
    • 소성∙가공
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    • 제11권8호
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    • pp.682-690
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    • 2002
  • The formation of adiabatic shearband in tungsten heavy alloys(WHA) was studied in this investigation. Five prismatic specimens were loaded by high velocity impacts and treated as plane strain problems. To find out the effect of particle's volume ratio, specimens containing 81%, 93% and 97% volume percents of tungsten particles were used. Also the effects of particle's geometry and size on the formation of shearband were studied for 81% volume percent alloys by small size particle model, large size particle model and undulated particle models, and the results were discussed.be used to diagnose the causes of necking and fracture in industrial practice and to investigate whether these defects were caused by material property variation, changes in lubrication, or incorrect press settings. In non-axisymmetric deep drawing, three modes of forming regimes are found: draw, stretch, plane strain. The stretch mode for non-axisymmetric deep drawing could be defined when the major and minor strains are positive. The draw mode could be defined when the major strain is positive and minor strain is negative, and plane strain mode could be defined when the major strain is positive and minor strain is zero. Through experiments the draw mode was shown on the wall and flange are one of a drawn cup, while the plane strain and the stretch mode were on the punch head and the punch corner area respectively, We observed that the punch load of elliptical deep drawing was decreased according to increase of die corner radius and the thickness deformation of minor side was more large than major side.

기어 치형의 미성형 구간 최소화를 위한 배압 냉간 단조 성형 해석 (Back-pressure cold forging analysis to minimize non-forming area of gear teeth)

  • 이용우;김장훈;권종호
    • 한국산학기술학회논문지
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    • 제17권7호
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    • pp.256-262
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    • 2016
  • 본 연구에서는 자동차 자동변속기의 핵심 부품인 아웃풋 허브 및 리액션 허브의 치형 미성형 구간의 최소화를 위한 배압 냉간 단조 성형 공법에 대한 유한요소해석을 수행하였다. 변위제어해석으로 펀치 하중 및 슬리브 배압력을 도출하였고, 도출된 하중 및 배압력을 이용한 하중제어해석을 수행하여 상호 검증을 하였다. 변위제어해석과 하중제어해석이 유사한 경향을 보였으며, 아웃풋 허브와 리액션 허브의 미성형 구간을 기준 이하로 만족시키기 위한 펀치 하중과 슬리브 배압력을 구하였다. 리액션 허브의 펀치 하중이 아웃풋 허브 보다 큰 이유는 상부 치형 가공 시 리액션 허브의 단면감소율이 아웃풋 허브 보다 크기 때문인 것으로 판단되며, 슬리브 배압력이 아웃풋허브와 리액션 허브에서 차이가 나는 것 또한 슬리브 단면적의 차이에 기인한 것으로 판단된다. 본 연구에서 제시한 배압 냉간 단조 성형 해석 과정과 결과를 적용한 실제 치형 가공의 미성형 구간 결과와 비교하여 검증 평가하였으며, 치형 제품의 품질 개선 및 생산성 향상을 위해 요구되는 성형가공 조건을 도출하는데 유용하게 활용될 수 있을 것이다.