• Advances in materials Research
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• 제8권4호
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• pp.337-359
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• 2019

Shape Memory Polymer Composites (SMPC) have gained popularity over the last few decades due to its flexible shape memory behaviour over wide range of strains and temperatures. In this paper, non-linear bending analysis has been carried out for SMPC beam under the application of uniformly distributed transverse load (UDL). Simplified C⁰ continuity Finite Element Method (FEM) based on Higher Order Shear Deformation Theory (HSDT) has been adopted for flexural analysis of SMPC. The numerical solutions are obtained by iterative Newton Raphson method. Material properties of SMPC with Shape Memory Polymer (SMP) as matrix and carbon fibre as reinforcements, have been calculated by theory of volume averaging. Effect of temperature on SMPC has been evaluated for numerous parameters for instance number of layers, aspect ratio, boundary conditions, volume fraction of carbon fiber and laminate stacking orientation. Moreover, deflection profile over unit length and behavior of stresses across thickness are also presented to elaborate the effect of glass transition temperature (T_g). Present study provides detailed explanation on effect of different parameters on the bending of SMPC beam for large strain over a broad span of temperature from 273-373K, which encompasses glass transition region of SMPC.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Preventive Nutrition and Food Science
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• 제13권4호
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• pp.281-285
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• 2008

Cherry tomatoes are rich in antioxidants, which may protect against neurodegeneration and consequent memory loss. This study was conducted to investigate the effect of cherry tomatoes on scopolamine-induced amnesia in mice. Male ICR mice (4 weeks old) were maintained for 4 weeks on a diet containing 10 or 20% tomato powder (TP), and then administered scopolamine (1 mg/kg body weight, i.p.) 45 min before memory testing. Passive avoidance and Morris water maze testing revealed that scopolamine-induced amnesia was significantly reduced in the TP groups compared to the non TP-received (control) group. Accordingly, acetylcholinesterase activities in the serum and brain of TP groups were lower than those in the control group. These findings suggest that cherry tomatoes may be useful for the prevention of neurodegenerative diseases such as amnesia and Alzheimer's disease.

• 대한통합의학회지
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• 제1권3호
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• pp.79-95
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• 2013

Purpose : This study aims to investigate the effect of the Snoezelen and Rehacom programs on improvement of attention and memory, and the effect of the Snoezelen program on stress reduction. Method : This study was targeted at 11 subjects in the Snoezelen experimental group, 11 subjects in the Rehacom group and 11 subjects in the non-experimental group. As the initial evaluation, all the subjects took electroencephalography. Then, the Snoezelen group and Rehacom group did Snoezelen training and Rehacom training, respectively total 12 times(for 20 minutes twice per week for six weeks), but no training was applied to the control group. Three weeks after the training, the interim was carried out, and four weeks after the training, the final evaluation was carried out. Results : Subjects' attention increased to $58.15{\pm}4.96$ from $43.75{\pm}4.69$ during the Snoezelen training, and increased to $49.85{\pm}1.91$ from $43.28{\pm}2.71$ during the Rehacom training, which means the Snoezelen training was more effective in improving attention(P<0.05). Subjects' memory increased to $56.14{\pm}1.26$ from $43.19{\pm}3.46$ during the Snoezelen training, and increased to $50.94{\pm}4.0$ from $43.07{\pm}2.58$ during the Rehacom training. This also implies that the Snoezelen training was more effective in improving memory(P<0.05). Conclusion : Though both of the Snoezelen training and Rehacom training improved attention and memory, the Snoezelen program was more effective, and it also influenced stress resistance and physical arousal.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.87-89
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• 2006

This paper proposes a sense amplifier with non-volatile memory in order to improve the image quality of LCD by enhancing the matching of the driving voltages between the panel and driver. The sense amplifier having a wide sensing margin and fast response adjusts LCD driver voltage of display driver. The CSTN-LCD with the sense amplifier results improved image quality than that with conventional 6 bit column driver without it.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.127-128
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• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.204-204
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• 2009

• 대한금속재료학회지
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• 제47권12호
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• pp.881-886
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• 2009

Research into the replacement of injured systems and tissue in the human body is advancing rapidly. Recently, Ti-Ni shape memory alloys have shown excellent biofunctionality related to their shape memory effect and superelasticity. In this study, the effect of an acid or an alkali treatment on the bioactivity in 49Ti-Ni and 51.5Ti-48.5Ni alloys is investigated in an effort to utilize Ti-Ni alloy as a biomaterial. In addition, the biocompatibility in a SBF solution is assessed through in vitro testing. A porous surface was formed on the surface of both alloys after a chemical treatment. According to the in vitro test, apatite formed on the surfaces of both alloys. The forming rate of apatite in the Ti-rich alloy was faster that in the Ni-rich alloy. The formation of apatite provided proof of the bioactivity of the Ti-Ni alloy. A small quantity of Ni was eluted at the initial stage, whereas Ni was not found for 12 days in the Ti-rich alloy and for 8 days in the Ni-rich alloy. In the case of the treated 51.5Ti-Ni alloy, the shape memory property was worsened but the biocompatibility was improved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.176.1-176.1
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• 2009