• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1579-1587
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• 2000

This paper presents the properties of the RF part in the receiving system based in IMT-2000 terminal technology. It mainly discuss the RF parameter performance of the receiving system for mobile telecommunication comparable to IS-98A and J-STD-018 specifications of commercially available CDMA and PCS, and is to anticipate the processing gain of the IMT-2000 receiving system, processing gain according to data processing rate, and terminal noise figure according to processing gain, relationship between noise figures according to Eb/Nt, Ioc. It is performed by such analysis method as CDMA and PCS receiving systems. Transmission bandwidth is n$\times$1.25 MHz(n=1, 3, 6, 9, 12) which is recommended by Qualcomm and NTT, the leading company in cdma 2000. Data transmission rate of IMT-2000 is classified into three cases as in moving vehicle environment of 144Kbps, outdoor pedestrian environment of 384Kbps, and indoor office environment of 2Mbps

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.165-170
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• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.71-76
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• 2001

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA (Low Noise Amplifiers) has been designed and fabricated far the Ka band satellite communications and BWLL(Broad Band Wireless Local Loop)system. The MMIC LNA consists of two single-ended type amplification stages and one balanced type amplification stage to satisfy noise figure, high gain and amplitude linearity. The 0.15${\mu}{\textrm}{m}$ pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits and λ/4 short lines were inserted to ensure high stability over the frequency range form DC to 80 GHz. The size of the MMIC LNA is 3.1mm$\times$2.4mm(7.44mm$^2$). The on wafer measured performance of the MMIC LNA, which agreed with the designed performance, showed the noise figure of less than 2.0 dB, and the gain of more than 26 dB, over frequency ranges from 22 GHz to 30 GHz.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.197-200
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• 2000

This paper proposes a CMOS low noise VGA. It describes the noise optimization method of the proposed VGA. The designed VGA provides of a 0 to 21.30dB gain variation and its bandwidth of 49MHz. The input reflected noise voltage is 4.84nV/sqrt-hz at 1MHz and noise figure is 14.53dB(Rs=50 Ω). The VGA was fabricated using a 0.35-${\mu}{\textrm}{m}$ CMOS technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.180-188
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• 2013

A W-band waveguide noise measurement system for calibrating noise sources was implemented and its basic characteristics were discussed. The measurement system consists of a commercial noise figure analyzer, a full W-band frequency converter, and a local oscillator. To measure the noise temperature of a noise source, the Y-factor method is generally used. Since the Y-factor method is based on the assumption that the receiving system is linear, linearity is one of important performance parameters of the measurement system. In this paper, the linearities for mixer, intermediate frequency(IF), and RF parts were evaluated to be 0.24 dB, 0.05 dB, and 0.20 dB, respectively. The noise figure of the measurement system evaluated is 5 dB to 17 dB in W-band. The measurement system can be used to measure thermal noise characteristics of electronic and electrical devices, equipments, and systems as well as to calibrate noise sources.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.215-218
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• 2006

In this paper, a small size, $7{\times}6mm^2$, Low Noise Amplifier(LNA) using LTCC process was fabricated with multi-layer structure for 2.4GHz wireless LAN. The measured results demonstrate that the bandwidth is 130 MHz, and the operating frequency is from 2.39GHz to 2.52GHz. The power gain is above 7.3 dB in the operating frequency range and the gain flatness is 0.5 dB. The maximum S11 is -4 dB and the maximum S22 is -7.5 dB. The noise figure is less than 1.83 dB. The measured power gain, S11 and S22 were had poorer performance than the simulation results. The reason for this discrepancy is that the input and output matching was not performed exactly. However, the noise figure of the LTCC low noise amplifier is better than simulation result. It is found that it is possible to fabricate a LTCC low noise amplifier in a small size.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.

• ETRI Journal
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• v.18 no.3
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• International Journal of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.122-128
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• 2023

This paper proposes two kinds of single-balanced direct conversion quadrature receivers using selfoscillating LMVs in which the voltage-controlled oscillator (VCO) itself operates as a mixer while generating an oscillation. The two LMVs are complementary coupled and series coupled to generate the quadrature oscillating signals, respectively. Using a 65 nm CMOS technology, the proposed quadrature receivers are designed and simulated. Oscillating at around 2.4 GHz frequency, the complementary coupled quadrature receiver achieves the phase noise of -28 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The other series coupled receiver achieves the phase noise of -31 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain of the two single-balanced receivers is 37 dB and 45 dB, respectively. The double-sideband noise figure of the two receivers is 5.3 dB at 1 MHz offset. The quadrature receivers consume about 440 μW dc power from a 1.0-V supply.

• Journal of the Chungcheong Mathematical Society
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• v.26 no.2
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• pp.411-420
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• 2013

We consider fractional Gussian noise and FARIMA sequence with Gaussian innovations and show that the suitably scaled distributions of the FARIMA sequences converge to fractional Gaussian noise in the sense of finite dimensional distributions. Finally, we figure out ACF function and estimate the self-similarity parameter H of FARIMA(0, $d$, 0) by using R/S method.