• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.4
• /
• pp.55-62
• /
• 2002

FRLGC(Fiber Ring laser Gain Clamped) EDFA Is demonstrated for an automatic gain control in hi-directional ADM(Add Drop Multiplexer) node configuration. Specifically, we investigate hi-directional characteristics of noise figure. Assuming a hi-directional small signal input, noise figures for forward or backward signal input are calculated using average inversion algorithm, according to the propagating directions and lasing wavelengths of a compensating signal. The operating condition of FRLGC-EDFA may be optimized with a backward lasing and short lasing wavelength in the aspect of hi-directional noise figure characteristics.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.323-326
• /
• 1998

A LNA(Low Nosise Amplifer) module for the Ka-band satellite transponder has been developed, which is composed of developed two MMIC chips and 50$\Omega$ line. This LNA exhibited noise figure less than 3.12dB, linear gain higher than 32dB from 30.085GHz to 30.885GHz frequency range. Temperature test from $20^{\circ}to$ $60^{\circ}C$ of the LNA Module showed very small noise figure and linear gain variation of 0.2 dB and 0.4dB.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2006.05a
• /
• pp.750-753
• /
• 2006

Noise prediction is required as part of an environmental impact assessment. However, there has not been any comprehensive study or review en the major factors of specific vehicles affecting traffic noise so that there is difficulty when trying to figure out the source of noise. This study was to evaluate the noise effect of specific vehicles passing through a certain road by using noise map.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.168-172
• /
• 2003

This paper analyzes the output noise and the noise figure of common source MOSFET pair each input of which is separately driven in the different frequencies. This analysis is performed for concurrent dual band cascode CMOS LNA with double inputs and single output fabricated in $0.18{\mu}m$ CMOS process. Since both inputs and output are matched to near $50{\Omega}$ using on-chip inductors, the measured noise figures are much higher than those of usual CMOS LNA. But, the main concern of this paper is focused on the added noise features due to the other channel common source stage. The dual-band LNA results in noise figure of 4.54dB at 2.14GHz and 6.03dB at 5.25GHz for selectable operation and 7.44dB and 6.58dB for concurrent operation. The noise analysis explains why the added noise at each band shows so large difference.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.2
• /
• pp.53-57
• /
• 2017

This paper proposes a 401MHz-406MHz low noise amplifier for MedRadio applications. The proposed low noise amplifier adopts a common gate amplifier topology using current reuse gm-boosting technique. The proposed low noise amplifier shows better performance of voltage gain and noise figure than the conventional gm-boosted common gate amplifier in the same power consumption. The proposed current-reuse gm-boosted low noise amplifier achieves a voltage gain of 22 dB, a noise figure of 2.95 dB, and IIP3 of -17 dBm while consuming $170{\mu}W$ from a 0.5 V supply voltage in $0.13{\mu}m$ CMOS process.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.8 no.11
• /
• pp.1633-1640
• /
• 2013

In this paper, noise parameters for high frequency modeling of dual-gate FET are extracted and analyzed. To extract thermal noise parameter of dual gate, noise characteristics are measured by changing input impedance of noise source using Tuner, and the influence of pad parasitic elements are subtracted using open and short dummy structure. Measured results indicated that the dual-gate FET is improved the noise figure by 0.2dB compared with conventional cascode structure FET at 5GHz, and it confirmed that the noise figure has dropped due to reduction of capacitances between the drain and source, gate and drain by simulation and analysis of small-signal parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.7
• /
• pp.1191-1198
• /
• 2001

MMIC low noise amplifiers for millimeter-wave application using 0.15 $\mu$m pHEMT have been presented in this paper. The design emphasis is on active device model and EM simulation. The deficiency of conventional device models is identified. A distributed device model has been adapted to circumvent the scaling problems and, thus, to predict small signal and noise parameters accurately. Two single-ended low noise amplifier are designed using distributed active device model for Q-band(40 ∼ 44 GHz) and V-band(58 ∼65 GHz) application. The Q-band amplifier achieved a average noise figure of 2.2 dB with 18.3 dB average gain. The V-band amplifier achieved a average noise figure of 2.9 dB with 14.7 dB average gain. The design technique and model employed provides good agreement between measured and predicted results. Compared with the published data, this work also represents state-of-the-art performance in terms of gain and noise figure.

• Journal of electromagnetic engineering and science
• /
• v.3 no.1
• /
• pp.12-16
• /
• 2003

In this paper, low noise amplifiers with coplanar waveguide structure are presented for Wireless LAN data communication application. For comparison of microwave performance, LNAs of cascode type and balanced type using cascode cell with the same substrate and same bias conditions are designed and implemented. A cascode type of LNA shows the gain of 12.45 ㏈, input return loss of 11.63 ㏈, and noise figure of 1.52㏈. A balanced type of LNA using cascode cell shows the gain of 6.58 ㏈, input return loss of 16.6 ㏈, and noise figure of 1.18 ㏈.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.13 no.4
• /
• pp.360-368
• /
• 1988

A 14 to 14.5 GHz low noise MIC amplifier is designed on the $Al_2$$O_3$ substrate. The amplifier which uses a GaAsMESFET developed at COMSAT Laboratories has been designed and optivized to have gain greater than 7dB and noise figure less than 2dB using Super-Compact program. Experimental results show that the gain of the amplifier is 7 to 7.7 dB, while noise figure is 3.8 to 4.3dB through the desired band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.6
• /
• pp.893-899
• /
• 2000

A 900 MHz low-noise amplifier(LNA) with a measured noise figure of 4.8 dB and an associated gain of 13.2 dB was fabricated in a 0.65 $\mu$m CMOS. The inductive source architecture of offers the possibility of achieving the best noise performance. At 900 MHz, the fabricated LNA dissipates 39 mW from a single 3 V power supply including the bias circuitry and provides -26dB input return loss, -17 dB output return loss, and an input 1-dB compression level of -12 dBm.