• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.35-38
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• 2008

In this paper, study noise performance of LNA to enhance Q-factor of input circuit by patterned ground shield is inserted inductor using TSMC 0.18um. Applied LNA technology is cascode method. The input matching circuit was constituted on-chip and wirebonding inductor. Taguchi's method is used for the best suited structure of PGS. We confirmed enhancement of Q-factor by inserted PGS into inductor. The input matching circuit enhanced Q-factor by inductor with PGS improve noise figure of LNA.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.3
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• pp.152-155
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• 2013

In this paper, the reduction of the figure of merit depending on the increased spill-over when the parabolic reflector is cut off partially for low-profile configuration in the satellite broadcast receiving antenna is analyzed. Also for the accurate analysis and simulation, it is considered that the noise temperature is increased due to the effect of ground thermal noise toword the sidelobes and back lobes when the antenna is tracked from $0^{\circ}$ to $60^{\circ}$ in elevation angle, and that the total noise temperature is increased because to the noise figure of LNA. As the results, noise temperature is increased up to about 15K and G/T ratio is decreased to about 2.5dB, when the reflector is cut 35% off partially.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.621-624
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• 2003

In this paper, two Cascode Low Noise Variable Gain Amplifiers are proposed for wide dynamic range and constant Noise Figure for frequency range of 2.4GHz. Designed Variable Gain Low Noise Amplifier are for Wireless Local Area Network (WLAN) applications. A gain is higher than 17dB and the noise figure is approximately 1.3dB and the input VSWR is better than 2:1.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.5
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• pp.682-685
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• 2020

In this paper, we analyze the dominant noise source of conventional inductively degenerated common-source (CS) cascode low noise amplifier (LNA) when width and gate length of stacked transistors vary. Analytical MOSFET and its noise model are used to estimate the contributions of noise sources. All parameters are based on measured data of 60nm, 90nm and 130nm CMOS devices. Based on the noise analysis for different frequencies and device parameters including process nodes, the dominant noise source can be analyzed to optimize noise figure on the configuration. We verified analytically that the intuctively degenerated CS topology can not sustain its benefits in noise above a certain operation frequency of LNA over different process nodes.

• ETRI Journal
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• v.33 no.2
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• pp.176-183
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• 2011

This paper presents a new analytical approach and experimental verification for the improvement of noise performance in phased-array receivers. For analysis purposes, a multi-channel array system is converted into an equivalent single-channel system, such that the two presents the identical signal and noise powers at the output, respectively. We define an effective gain, noise figure, and signal-to-noise ratio in the equivalent system. Through the proposed approach, the noise performance of the array receiver is analyzed in a general and straightforward manner and then compared to that of each individual array channel. In addition, the phase noise of the array system is analyzed in a rigorous manner, showing its effective reduction by a factor of the array size. The predicted improvement of the noise performance is experimentally confirmed with a CMOS integrated phased-array receiver.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.191-194
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• 1999

The balanced amplifier is a practical amplifier to, implement a broadband amplifier that has flat gain and good input and output VSWR. Three-stage amplifier design procedure usually divided into three partition satisfying the following requirements : low noise figure, high gain and high power output. FHX35LG HEMT device is used in the design can be obtained low noise figure at the first-stage, MGA82563 MMIC device is used in the design can be maintained high gain at the second-stage, and AHI MMIC device is used in the design can be required high power output at the third-stage. The results of three-stage balanced amplifier show that power gain is about 40㏈, noise figure is less than 1.2㏈ at operating frequency.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.279-285
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• 2004

In this paper, low noise amplifier(LNA), aperture coupled patch antenna and $4{\times}4$ array antenna are designed in the frequency range from 11.7㎓ to 12㎓. Array antennas with and without LNA at the antenna element are fabricated and the performances are measured including noise figure(NF). The noise figure calculation for overall system was conducted and compared with the measured data to verify our measurement method. The measured overall noise figure of the array antenna with LNA at the antenna element is lower than that of array without LNA as expected.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.176-183
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• 2004

In this paper, two-stage low noise amplifier(LNA) for S-band is designed and implemented using ATF54143 HEMT of HP CO. In order to get noise figure and input VSWR to be wanted, it is considered input VSWR and noise figure simultaneously in matching-circuit designing. The fabricated two-stage low noise amplifier has the gain of 27.8dB, input VSWR and output VSWR under 1.5.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.149-154
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• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.