• Title/Summary/Keyword: Noise Band

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A Study on the Characteristics of the Synchroneous Data Transmission by the Phase Band Limit of AC Power Wave to Avoid the Periodic Noises in the Data Communication System of Distribution Line Carrier Method (배전선 반송 데이타통신에서의 전원동기 위상대역한정 전송에 의한 주기적 노이즈신호 회피특성에 관한 연구)

  • 최순만;노창주
    • Journal of Advanced Marine Engineering and Technology
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    • v.18 no.3
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    • pp.78-84
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    • 1994
  • The location of periodic noises in phase of AC power wave reveals to be specific according to the noise kinds which can be generally classified into modulation and baseband types in DLC. The former noise type has constant noise phase which is originated from switching mode power supplies and the latter normally caused from thyristor circuit of low switching frequency is compared to be more dispersive than the other.

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A CMOS Frequency Synthesizer for 5~6 GHz UNII-Band Sub-Harmonic Direct-Conversion Receiver

  • Jeong, Chan-Young;Yoo, Chang-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.153-159
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    • 2009
  • A CMOS frequency synthesizer for $5{\sim}6$ GHz UNII-band sub-harmonic direct-conversion receiver has been developed. For quadrature down-conversion with sub-harmonic mixing, octa-phase local oscillator (LO) signals are generated by an integer-N type phase-locked loop (PLL) frequency synthesizer. The complex timing issue of feedback divider of the PLL with large division ratio is solved by using multimodulus prescaler. Phase noise of the local oscillator signal is improved by employing the ring-type LC-tank oscillator and switching its tail current source. Implemented in a $0.18{\mu}m$ CMOS technology, the phase noise of the LO signal is lower than -80 dBc/Hz and -113 dBc/Hz at 100 kHz and 1MHz offset, respect-tively. The measured reference spur is lower than -70 dBc and the power consumption is 40 m W from a 1.8 V supply voltage.

A Digital System Modelling for Narrow Band ISDN and A Decision Methodology of Channel Capacity Limitation (협대역 ISDN을 위한 디지털 시스템 모델링과 통신로 용량의 한계 결정)

  • 이종현;성태경;신용옥
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.6
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    • pp.591-597
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    • 1988
  • In this paper, we have studied a channel capacity affected by noise which produces burst errors in the ISDN(approx 140Kbps) data transmission using a existing PSTN. First, a digital communication system model to apply a subscriber line to a narrow band ISDN channel is presented. Second, the decision methodology of a channel capacity limitation whether the pdf of the noise generated by a waveform synthesizer is Pisson or Laplacian is described. As a result of the simulation, we have obtained that the Poission distributed noise is approached to the Guassian rather than the Laplacian under the same SNR condition.

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Error Performance of Binary FSK Fast Frequency Hopping(BFSK/FFH) Systems in the Presence of Partial-Band Noise Jamming (부분 대역 전파 방해하에서의 바이내리 FSK 주파수 급도약 통신 시스템의 오차 성능에 관하여)

  • 홍윤기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.3
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    • pp.52-60
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    • 1983
  • This paper presents a complete analysis for the derivation of the probability of error for a fast (or multiple-hops per bit) frequency hopping spread spectrum system employing binary FSK modulation and noncoherent reception in the presence of partial-band noise jamming and thermal noise. The worst-case error rate performances were obtained numerically and presented as a function of E /N with L as a parameter, where E /N and L are the signal bit energy-to-jamiming density ratio and the number of hops per bit, respectively.

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Development of Ku-band Low Noise Amplifier for Satellite Transponder (위성중계기용 Ku-대역 저잡음증폭기 개발)

  • Jeong, Jin-Cheol;Yom, In-Bok;Lee, Seong-Pal
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.96-99
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    • 2003
  • This paper presents the development of a Ku-band Low Noise Amplifier with the Noise figure of 1.4dBmax, the gain of 35dB, and the In/Out Return toss of -22dB/-18dB in the frequency range from 14 to 14.5GHz for Satellite transponders. All RF components were assembled using a hybrid technology with 15-mil thin-film substrates. The mechanical and thermal design of the housing was performed considering a vibration and a vacuum of space environment.

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A Study on the Broadband Microwave LNA(Low Noise Amplifier) (초고주파용 대역 저잡음 증폭기에 관한 연구)

  • Lee, S.W.;Cheon, C.Y.
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.487-488
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    • 1995
  • Broadband Microwave Low Noise Amplifier(LNA) is designed. The matching method using the broadband BPF(BandPass Filter) is introduced in this paper. This method is that the filter having the same reflection coefficient of Microwave GaAs FET in the desired bandwidth is located on the input stage of FET. The Simulated results is obtained that the $S_{21}$ and noise figure in 2.5GHz$\sim$9GHz, band are 8.5dB $\pm$ 1.5dB, 2.5dB $\pm$ 0.3dB respectively.

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Design of a Dynamic Absorber Using Permanent Magnet Force (영구자석의 자력을 이용한 동흡진기의 설계)

  • Son, Sol-San;Kim, Won-Jin
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.20 no.11
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    • pp.1064-1070
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    • 2010
  • In this work, a dynamic absorber with a plate-type cantilever using magnetic force is proposed to reduce the vibration of a compressor directly. The dynamic absorber using magnetic force has some advantages of easily tuning the control frequency by adjusting the magnet spacing and obtaining wider control frequency band. The dynamic absorber is designed theoretically and tested experimentally to estimate the control frequency band. When the compressor is equipped with the dynamic absorber, the vibration of compressor and the noise level of refrigerator are reduced by 30 % and 3.2 dB respectively.

A Design Improvement of the Vent Silencer of the Industrial Plants Using Acoustic Analysis (음향해석을 이용한 산업용 플랜트 배출 소음기의 설계 개선)

  • Lee, Jong-Wha;Lee, Boo-Youn;Nam, Kyoung-Hun;Kim, Baek-Young;Kim, Won-Jin
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.2 s.179
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    • pp.122-128
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    • 2006
  • This study focuses on a performance improvement of the vent silencer using acoustic analysis. Since the vent silencer is generally used for a high level shock noise, it should be designed to reduce a wide frequency band noise. In the designing stage of the vent silencer, structural shapes of diffuser and splitter are the most significant design parameters. Effects of modifying the original structure of the diffuser and the splitter are analyzed and evaluated. From the results, It is found that the diffuser with two pipes and double-step structure more effectively reduces a wide frequency band noise but the increment of the number of splitters is not desirable.

A Dual-Band CMOS Low-Noise Amplifier

  • Oh, Tae-Hyoun;Jun, Hee-Suk;Jung, Yung-Ho;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.489-490
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    • 2006
  • This paper presents a switch type 2.4/5.8 GHz dual band low-noise amplifier, designed with $0.13{\mu}m$ RF CMOS technology. Using MOS switch allows the LNA to have two different input transconductance and output capacitance modes. Given supply voltage of 1.2 V, the simulation exhibits gains of 8.1 dB and 17.1 dB, noise figures of 3.1 dB and 2.57 dB and power consumptions of 13.0 mW and 10.2 mW at 2.4 GHz and 5.8 GHz, respectively.

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K-Band Low Noise Receiver Module Using MMIC Technology

  • Yu, Kyung-Wan;Uhm, Man-Seok;Yom, In-Bok;Chang, Dong-Pil;Lee, Jae-Hyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.1
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    • pp.110-115
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    • 2000
  • A K-band GaAs MMIC receiver module has been developed using 0.15 ${\mu}{\textrm}{m}$ HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

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