• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.2
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• pp.67-71
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• 2012

In this paper, a push-push oscillator at K-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve the phase noise and output power. The proposed oscillator shows low phase noise and high output power. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. oscillators which are combined in push-push structure improve output power. The propose push-push oscillator shows the output power of 3.1 dBm, the fundamental signal suppression of -23.7 dBc and phase noise of -116.28 dBc at 100 kHz offset frequency and 20.20 GHz center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.552-559
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• 2002

The EM(Engineering Model) LO(Local Oscillator) is designed for Ka-band satellite transponder. The VCO(Voltage Controlled Oscillator) is implemented using a high impedance inverter coupled with dielectric resonator to improve the phase noise performance out of the loop bandwidth. The phase of VCO is locked to that of a stable OCXO(Oven Controlled Crystal Oscillator) by using a SPD(Sampling Phase detector) to improve phase noise performance in the loop bandwidth. This LO exhibits the harmonic rejection characteristics above 43.83 dBc and requires 15 V and 160 mA. The phase noise characteristics are performed as -102.5 dBc/Hz at 10 KHz offset frequency and -104.0 dBc/Hz at 100 KHz offset frequency, respectively, with the output power of 13.50 dBm$\pm$0.33 dB over the temperature range of -20~+7$0^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.506-514
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• 1998

The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.10
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• pp.832-835
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• 2017

In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11C
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• pp.1111-1117
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• 2003

The maximum Doppler frequency, or equivalently, the mobile speed is very useful information to optimize the performance of many wireless communication systems. However, the performance of a maximum Doppler frequency estimator is limited since it requires an estimate of the signal-to-noise ratio (SNR) of the channel environment. In this paper, the improved method for the maximum Doppler frequency estimations based on the decision feedback Doppler adaptive band-limit (DF-DABL) method is proposed. To reduce the effect of additive noise, the proposed algorithm uses a novel Doppler adaptive band-limit (DABL) technique. The distortion due to the additive noise is drastically removed by the proposed DF-DABL method. Especially, the DF-DABL method does not need any other channel information such as SNR.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.897-904
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• 2011

In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.

• International Journal of Highway Engineering
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• v.14 no.5
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• pp.201-206
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• 2012

PURPOSES: This study evaluated a measuring technique for tire-pavement interaction noise that uses a noble close proximity (NCPX) method as well as for noise level measured inside of a car (e.g., Inside Noise Level) in term of rumble strips constructed at a tall gate. METHODS: According to the measurements of NCPX and inside noise level (INL), 1/3 octave band frequency analysis and overall noise level calculation were conducted in order to evaluate noise levels of NCPX and INL, depending on types of rumble strips. RESULTS: The tested sections of general concrete pavement surface and two different types of rumble strips were evaluated, using 1/3 octave band frequency analysis and overall noise level. From the analyzed results, it can be concluded that rumble strips generate a relatively huge noise levels when compared to the concrete pavement surface. CONCLUSIONS: Noting that above 3 dBA different noise levels can let drivers know that they are getting close to toll gate; therefore, they should apply their brakes. Thus, the noise levels of rumble strips are required to be reduced, based on considering the neighbors living near toll gates.

• The Journal of the Acoustical Society of Korea
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• v.37 no.5
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• pp.331-337
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• 2018

In this paper, we apply the NR (Noise Rating) to the evaluation of the residual noise of the window type ANC (Active Noise Control) and study the active noise controller for minimizing the NR value in rooms. We proposed a shape of a noise shaping filter of the Filtered-E LMS (Least Mean Square) algorithm that reduces the NR value within the effective operating frequency band of the ANC. The usefulness of the proposed scheme is verified by simulation and showed that the NR value of the residual noise is lower than the filters used in the conventional psychoacoustic ANC.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.513-517
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• 2003

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator} applied to X-band as stable source is implementea and constructed with a MESFET for low noise, a dielectric resonator of high frequency selectivity and high Q varactor diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated through the harmonic balance simulation technique to provide the optimum performance. The measured results of a fabricated VCDRO show that output is 2.22dBm at 12.05GHz. harmonic suppression -30dBc. phase noise -130dBc at 100kHz offset. and sweep range of varactor diode $\pm$18.7MHz. respectively. This oscillator will be available to X-band application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.335-344
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• 2004

A low phase noise EQM(Engineering Qualified Model) LO(Local Oscillator) has been developed for Ka-band satellite transponder. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is also designed using a high impedance inverter coupled with dielectric resonator to improve the phase noise performances out of the loop bandwidth. The mechanical analysis fur housing and the thermal analysis fur circuit board are achieved. This EQM LO is applied to Ka-band satellite transponder of EQM level after environmental experiments for space application. The LO has the harmonic suppression characteristics above 52 ㏈c and requires low power consumption under 1.3 watts. The phase noise characteristics are exhibited as -101.33 ㏈c/㎐ at 10 ㎑ offset frequency and -114.33 ㏈c/㎐ at 100 ㎑ offset frequency, with the output power of 14.0 ㏈m${\pm}$0.17 ㏈ over the temperature range of -15∼＋65$^{\circ}C$.