• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.466-472
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• 2012

Visible-light-responding photocatalysts, $N-TiO_2$, were prepared by nitrogen doping onto $TiO_2$. The crystalline structure and morphology, doping state of the prepared photocatalysts were characterized by XRD, FE-SEM, and XPS. The activity of the prepared photocatalysts was examined by the decomposition of methyleneblue. The prepared catalysts were anatase type and the crystallinity was increased with pH. The particle sizes of the prepared catalysts were 5.42, 5.99, 7.58 nm at pH 2.2, 4.7, 9.0, respectively. The particle sizes of the prepared catalysts were slightly increased with pH. The activity of the photocatalysts was directly proportional to the crystallinity of the catalysts. $N-TiO_2$ prepared by nitrogen doping onto $TiO_2$ showed activity under visible light. The doped nitrogen was located not in the lattice but on the surface.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.55-60
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• 1996

The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Analytical Science and Technology
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• v.8 no.4
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• pp.895-900
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• 1995

Urinary free and acetylated polyamine profiles have been investigated for their potential usefulness as biochemical markers of cancer in a control of group comprised of healthy volunteers (32 cases) and patients with various types of cancers(48 cases). The nine (5 free and 4 acetylated) endogeneous polyamines were simultaneously determined by a sensitive capillary gas chromatography/nitrogen-phosphorus detector (GC/NPD). The newly modified (simple and convenient) method was developed and the compounds were isolated by adsorption onto silica gel and derivatized by heptafluorobutyric anhydride to enhance their specificity on gas chromatograms. The good quality-control data were obtained through the precision and accuracy test and the recovery range of them was 48.6 ~ 101.2 %. The Korean reference values of urinary polyamines were established and significant differences were found in cancer patients compared with normal subjects. Also, to eliminate subject variations, precursors to product concentration ratios were compared between cancer patients and control group. The ratios of both putrescine to spermidine and total (free plus acetylated) putrescine to total spermidine were significantly greater in cancer patients than in normal subjects.

• Carbon letters
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• v.17 no.1
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• pp.29-32
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• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.133-134
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• 2000

Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.

• Advances in nano research
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• v.9 no.1
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• pp.25-32
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• 2020

In this work, we report the use of caffeine as an alternative source of nitrogen to successfully dope graphene (quaternary 400.6 eV and pyridinic at 398 eV according XPS), as well as the growth of silver nanowires (in-situ) in the surface of nitrogen doped graphene (NG) sheets. We used the improved graphene oxide method (IGO), chemical reduction of graphene oxide (GOx), and impregnation with caffeine as source of nitrogen for doping and subsequently, silver nanowires (NW) grow in the surface by the reduction of silver salts in the presence of NG, achieving a numerous of growth of NW in the graphene sheets. As supporting experimental evidence, the samples were analyzed using conventional characterization techniques: SEM-EDX, XRD, FT-IR, micro RAMAN, TEM, and XPS.

• Carbon letters
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• v.16 no.1
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• pp.57-61
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• 2015

Carbon aerogel is a porous carbon material possessing high porosity and high specific surface area. Nitrogen doping reduced the specific surface area and micropores, but it furnished basic sites to improve the $CO_2$ selectivity. In this work, N-doped carbon aerogels were prepared with different ratios of resorcinol/melamine by using the sol-gel method. The morphological properties were characterized by scanning electron microscopy (SEM). Nitrogen content was studied by X-ray photoelectron spectroscopy (XPS) and the specific surface area and micropore volume were analyzed by $N_2$ adsorption-desorption isotherms at 77 K. The $CO_2$ adsorption capacity was investigated by $CO_2$ adsorption-desorption isotherms at 298 K and 1 bar. Melamine containing N-doped CAs showed a high nitrogen content (5.54 wt.%). The prepared N-doped CAs exhibited a high $CO_2$ capture capacity of 118.77 mg/g (at resorcinol/melamine = 1:0.3). Therefore, we confirmed that the $CO_2$ adsorption capacity was strongly affected by the nitrogen moieties.

• Carbon letters
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• v.23
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• pp.9-16
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• 2017

This paper introduces a nitrogen-doped ordered mesoporous carbon (NOMC) derived from glucosamine with hybrid capacitive behaviors, achieved by successfully combining electrical double-layer capacitance with pseudo-capacitance behaviors. The nitrogen doping content of the fabricated NOMC reached 7.4 at% while its specific surface area ($S_{BET}$) and total pore volume reached $778m^2g^{-1}$ and $1.17cm^3g^{-1}$, respectively. A dual mesoporous structure with small mesopores centered at 3.6 nm and large mesopores centered at 9.9 nm was observed. The specific capacitance of the reported materials reached up to $328Fg^{-1}$, which was 2.1 times higher than that of pristine CMK-3. The capacitance retention rate was found to be higher than 87.9% after 1000 charge/discharge cycles. The supplementary pseudocapacitance as well as the enhanced wettability and conductivity due to the incorporation of nitrogen heteroatoms within the carbon matrixes were found to be responsible for the excellent capacitive performance of the reported NOMC materials.