Characteristics of Polycrystalline β-SiC Films Deposited by LPCVD with Different Doping Concentration |
Noh, Sang-Soo
(Research Institute, Daeyang Electric Co., LTD.)
Lee, Eung-Ahn (Research Institute, Daeyang Electric Co., LTD.) Fu, Xiaoan (Department of Electrical Engineering and Computer Science, Case Western Reserve University) Li, Chen (Department of Electrical Engineering and Computer Science, Case Western Reserve University) Mehregany, Mehran (Department of Electrical Engineering and Computer Science, Case Western Reserve University) |
1 | B. J. Baliga, 'Power semiconductor devices for variable-frequency drives', Proceeding of the IEEE, Vol. 82, p. 1112,1994 |
2 | B. J. Baliga, 'Trends in power semiconductor devices', IEEE Transactions on Electron Devices, Vol. 43, p. 1717, 1996 |
3 | M. Meheregany, C. A. Zorman, N. Raj an, and C. H. Wu, 'Silicon carbide MEMS for harsh environments', Proceeding of the IEEE, Vol. 86, p. 1594, 1998 |
4 | X. Song, S. Rajgopal,J. M. Melzak, C. A. Zorman, and M. Mehregany, 'Development of multilayer SiC surface micromachining process with capabilities and design rules comparable to conventional polysilicon surface micromachining', Mater. Sci. Forum, Vol. 755, p. 389, 2002 |
5 | J. E. Sudden and R. C. Buchanan, 'Thermal sensor properties of cermet resistor films on silicon substrates', Sens. Actuat., A. 90, p. 118,2001 |
6 |
R. Ziermann, J. V. Berg, E. Obermeier, F. Niemann, H. Moller, M. Eickhoff, and G. Krotz, 'High temperature piezoresistive |
7 | X. A. Fu, J. L. Dunning, C. A. Zorman, and M. Mehregany, 'Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition', Thin Solid Films, Vol. 492, p. 195, 2005 |
8 | X. A. Fu, J. L. Dunning, C. A. Zorman, and M. Mehregany, 'Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS application', Sens. Actuat., A. 199, p. 169, 2005 |
9 | J. Y. Seo, S. Y. Yoon, K. Niihara, and K. H. Kim, 'Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition', Thin Solid Films, Vol. 406, p. 138, 2002 |
10 | H. M. Chuang, K. B. Thei, S. F. Tsai, and W. C. Liu 'Temperature-dependent characteristics of poly silicon and diffused resistors', IEEE Transactions on Electron Devices, Vol. 50, p. 1413,2003 |
11 | R. S. Okojie, A. A. Ned, A. D. Kurtz, and W. N. Carr, 'Characterization of highly doped n- and ptype 6H-SiC piezoresistors', IEEE Transactions on Electron Devices, Vol. 45, p. 785, 1998 DOI ScienceOn |
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