• Title/Summary/Keyword: Nitrogen vacancy center

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Minireview on Nuclear Spin Polarization in Optically-Pumped Diamond Nitrogen Vacancy Centers

  • Jeong, Keunhong
    • Journal of the Korean Magnetic Resonance Society
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    • v.20 no.4
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    • pp.114-120
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    • 2016
  • Nitrogen vacancy-centered diamond has recently emerged as a promising material for various applications due to its special optical and magnetic properties. In particular, its applications as a fluorescent biomarker with small toxicity, magnetic field and electric field sensors have been a topic of great interest. Recent review (R. Schirhagl et al 2014) introduced those applications using single NV-center in nanodiamond. In this minireview, I introduce the rapidly emerging DNP (Dynamic Nuclear Polarization) field using optically-pumped NV center in diamonds. Additionally, the possibility of exploiting the optically-pumped NV center for polarization transfer source, which will produce a profound impact on room temperature DNP, will be discussed.

ESR detection of optically-induced hyperpolarization of nitrogen vacancy centers in diamond

  • An, Min-Gi;Shim, Jeong Hyun;Kim, Kiwoong;Oh, Sangwon;Jeong, Keunhong
    • Journal of the Korean Magnetic Resonance Society
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    • v.24 no.1
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    • pp.9-15
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    • 2020
  • Nitrogen vacancy center (NV center) in diamond has recently been appeared as a promising candidate for hyperpolarization applications due to its optical pumping property by laser. Optically Detected Magnetic Resonance (ODMR) has been used as a conventional method to obtain the resonance spectrum of NV centers. ODMR, however, has a shortcoming of sensitivity and a limitation of subjects, such that the degree of hyperpolarization can hardly be estimated, and that the spins other than NV centers are invisible. In contrast, Electron Spin Resonance (ESR) spectroscopy is known to proportionally reflect the degree of spin polarization. In this work, we successfully observed the optically-induced hyperpolarization of NV spins in diamond through CW-ESR spectroscopy with an X-band system. All the NV peaks were identified by calculating the eigenvalues of NV spin Hamiltonian. The intensities of NV peaks were enhanced over 240 times after optical pumping. The enhanced peaks corresponding to the transition from |ms=0> to |ms=-1> revealed inverted phases, while other peaks remained in-phase. The optically-induced hyperpolarization on NV spins can be a useful polarization source, leading to 13C nuclear hyperpolarization in diamond.

Optically Detected Magnetic Resonance with Nitrogen-Vacancy Spin Ensemble in Diamond

  • Lee, Hyun Joon;Shim, Jeong Hyun
    • Journal of the Korean Magnetic Resonance Society
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    • v.22 no.2
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    • pp.40-45
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    • 2018
  • We report Optically-Detected Magnetic Resonance (ODMR) study on Nitrogen-Vacancy (NV) centers in diamond. The experiment can easily be conducted with basic optics and microwave components. A diamond crystal having a high-density NV center is suitable for the ODMR study. The magnetic field dependence of ODMR spectrum allowed us to determine the orientation of the diamond crystal. In addition, we measured the variation of the ODMR spectrum as a function of the excitation laser power. Thermal heating induced by optical absorption caused the monotonic decrease of zero field splitting. The contrast of the ODMR peak, however, increased and, then, began to decrease, indicating the optimal laser power for recording the ODMR spectrum.

Nanoscale-NMR with Nitrogen Vacancy center spins in diamond

  • Lee, Junghyun
    • Journal of the Korean Magnetic Resonance Society
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    • v.24 no.2
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    • pp.59-65
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    • 2020
  • Nitrogen-Vacancy (NV) center in diamond has been an emerging versatile tool for quantum sensing applications. Amongst various applications, nano-scale nuclear magnetic resonance (NMR) using a single or ensemble NV centers has demonstrated promising results, opening possibility of a single molecule NMR for its chemical structural studies or multi-nuclear spin spectroscopy for quantum information science. However, there is a key challenge, which limited the spectral resolution of NMR detection using NV centers; the interrogation duration for NV-NMR detection technique has been limited by the NV sensor spin lifetime (T1 ~ 3ms), which is orders of magnitude shorter than the coherence times of nuclear spins in bulk liquid samples (T2 ~ 1s) or intrinsic 13C nuclear spins in diamond. Recent studies have shown that quantum memory technique or synchronized readout detection technique can further narrow down the spectral linewidth of NMR signal. In this short review paper, we overview basic concepts of nanoscale NMR using NV centers, and introduce further developments in high spectral resolution NV NMR studies.

Mini-review on fabrication of nitrogen vacancy center in diamond and its application to NMR

  • Oh, Sangwon
    • Journal of the Korean Magnetic Resonance Society
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    • v.23 no.3
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    • pp.73-80
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    • 2019
  • Nitrogen-vacancy (NV) is one of the most popular solid-state spin systems for quantum sensing. NV has been used for vector magnetometry with nanometer spatial resolution and sensors for nuclear magnetic resonance (NMR) in samples with small volume, less than 10 pL. Various studies are in progress to make NV a complementary sensor for current NMR technique. Fabricating and improving diamond itself are one of the research topics. This mini-review contains recent develops in diamond fabrication and treatment for higher NV yield. Additionally, we briefly introduce the development status of NV in NMR.

A study on the identification of type IIa natural diamonds treated by the HPHT method (HPHT(고온고압)에 의해 처리된 type IIa 천연 다이아몬드의 감별에 관한 연구)

  • 김영출;최현민
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.1
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    • pp.21-26
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    • 2004
  • Results from PL and Raman spectroscopic analyses of HPHT (high-pressure high-temperature) treated type IIa diamonds are presented, and these spectral characteristics are compared with those of untreated diamonds of similar color and type. We identify a number of significant changes by 325 nm He/Cd laser excitation. Several peaks are removed completely, including H4, H3 system in HPHT treated diamond. The N3 system, however, increased in emission. Also we can find the behaviour of the nitrogen-vacancy related center N-V centers at 575 and 637.1 nm, as observed with 514 nm Ar ion laser excitation. When these centers are present, the FWHM (full width at half maximum) of 637.1 nm luminescence intensities offers a potential means of separating HPHT-treated from untreated type IIa diamonds. The width of 637.1 nm $(N-V)^-$line measured at the position oi half the peak's height are determine to range from 19.8 to $32.1cm^{-1}$ for HPHT treated diamonds.

Rear Surface Passivation of Silicon Solar Cell with AlON Layer by Reactive Magnetron Sputtering

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Kim, Kyung-Hoon;Kim, Sung-Min;Kim, Dong-Hwan;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.430-430
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    • 2012
  • The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

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Study on the Spectroscopic Characteristics of Irradiated Diamonds (전자빔 처리된 다이아몬드의 분광학적 특성 연구)

  • Shon, Shoo-Hack;Kim, Bea-Seoub;Jang, Yun-Deuk;Kim, Jong-Rang;Kim, Jong-Gun;Kim, Jeong-Jin
    • Journal of the Mineralogical Society of Korea
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    • v.22 no.4
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    • pp.407-415
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    • 2009
  • The change of the nitrogen-related centers and the color change of electron beam irradiated type Ia natural diamonds were studied. The irradiation of diamond with high-energy electron beam creates lattice defects which are neutral single vacancy $V^0$. It increased with increasing electron dose density. The B aggregation seems to produce vacancies more easily than the A aggregation, because diamonds with more B aggregation have more platelets, which are sufficient breakable size by electron beam. Greenish blue color of irradiated diamond is changed to darker with increasing electron dose density. GR1 centers with a zero-phonon line at 741 nm and phonon sidebands make transmit visible light at 530 nm and it moves to 500 nm with higher intensity of GR1 centers.