• 한국세라믹학회지
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• 제31권6호
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• pp.637-642
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• 1994

Using SHS(Self-propagating High-temperature Synthesis) method, the optimum synthetic condition of titanium carbonitride was established by controlling the parameters such as relative density of mixture (Ti+C), nitrogen pressure, additive amounts of titanium hydride(TiH1.924) and protecting heat loss. Under 1 atm nitrogen pressure, nitridation ratio with changing relative density of the sample compacts has a maximum (87.2%) at about 55%, and in the case of enveloping the pellet with a quartz tube, the highest nitridation ratio of 90% was obtained at about 68%. At relative density of 55%, nitridation ratio with the nitrogen pressure has a miximum (87.3%) at 7 atm. As the amounts of additive titanium hydride increased, nitridation ratio decreased at below 7 atm nitrogen pressure and, increased at above this pressure until percent of addition percent reached 15 wt% and decreased abruptly upon futher increases in titanium hydride. In the synthesis of TiCxNy by combustion reaction, heat transfer from combustion zone to preheating zone and nitrogen gas penetration into the compact were found to be important factors affecting the TiCxNy formation. It was difficult to obtain high nitridation ratio when the conbustion temperature was either too high or too low, and it seems that the retention of high temperature after a combustion wave sweeped through the reactant mixture pellet is critical to obtain a satisfactory nitridation ratio.

• Korean Chemical Engineering Research
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• 제60권4호
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• pp.620-629
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• 2022

가열 속도, 몰 공간속도, 질화반응온도 등 다양한 실험 조건을 변화하며 바나디움 산화물과 암모니아와의 승온 질화반응을 통하여 바나디움 산화질화물을 제조하여 특성분석을 수행하였으며 제조된 바나디움 산화질화물 상에서 암모니아 분해반응의 촉매 활성을 검토하였다. 제조된 촉매의 물리·화학적 특성을 알아보기 위하여 N₂ 흡착분석, X-선 회절분석(XRD), 수소 승온환원(H₂-TPR), 산소 존재 하 승온산화 (TPO), 암모니아 탈착 (NH₃-TPD), 투과전자현미경(TEM) 분석을 수행하였다. 340 ℃에서 5 m² g^-1의 낮은 비표면적을 갖는 V₂O₅의 환원에 의하여 V₂O₃ 으로의 변환은 미세 기공 형성에 의해 115 m² g^-1 높은 비표면적 값을 보여주었으며 그 이상의 질화반응 온도가 증가함에 따라 소결현상에 의해 지속적인 비표면적의 감소를 초래하였다. 비표면적에 가장 큰 영향을 미치는 질화반응 변수는 반응온도였으며, 단일 상의 VN_xO_y의 x + y 값은 질화반응온도가 증가함에 따라 1.5에서 1.0으로 근접하였으며 680 ℃의 높은 반응온도에서 입방 격자상수 a는 VN 값에 근접하였다. 본 실험 조건 중에 질화반응온도가 가장 높았던 680 ℃에서 암모니아 전환율은 93%로 나타났으며 비활성화는 관찰되지 않았다.

• 한국전자통신학회논문지
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• 제9권7호
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• pp.747-752
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• 2014

본 논문은 $0.13{\mu}m$ 기술의 디자인을 10% 축소하는데 기존의 로직 디바이스만의 축소와는 달리 로직뿐 아니라 입, 출력 회로의 축소에 관한 것이다. 게이트 산화막(1.2V)을 decoupled plasma nitridation(DPN) oxide로 변경함으로써 flicker 노이즈를 축소 전 공정에 비해 1/3-1/5배 감소됨을 확인하였다. 또한, 축소에 의한 피할 수 없는 문제는 일반적인 metal insulator metal(MIM)의 캐패시터 문제이다. 이를 해결하기 위하여 20% 높은 MIM 캐패시터($1.2fF/{\mu}m^2$)를 개선하고 그 특성을 평가하였다.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1323-1328
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• 1988

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Progress in Superconductivity
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• 제3권1호
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• pp.49-55
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• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

• 한국세라믹학회지
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• 제20권4호
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• pp.305-314
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• 1983

In order to enhance the rate of th nitridation and to give the high density of reaction-bonded silicon nitride MgO powder as nitriding aid were added to silicon powders and the mixture was pressed isostatically into compacts which were nitrided in the furnace of 1, 35$0^{\circ}C$ where 95% $N_2$-5% $H_2$ gases were flowing. As the other nitriding aid $Mg(NO_3)_2 6H_2O$ was selected, A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$. Magnesium oxide-coated silicon powders were formed into compacts prior to the nitridation on the same condition as the former. Magnesium nitrate (MgO, produced from the decomposition of magnesium nitrate) was more effective for the formation of the $\beta$-phase in the initial stage of the nitridation probably due to the easy formation of $MgO-SiO_2$-metal oxide eutectic melt. It has been confirmed that forsterite was formed as a result of the reaction between MgO and $SiO_2$ film of silicon surface. It was considered that MgO produced from magnesium nitrate may be finer more reactive and more uniformly distributed on the surface of silicon particles than original MgO. The higher the forming pressure was the more the $\beta$-phase was formed.

• 열처리공학회지
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• 제8권2호
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• pp.137-148
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• 1995

The nitridation kinetics of titanium powder were studied by isothermal and non-isothermal (dynamic) methods in high purity nitrogen under I atm pressure. For the comparison with nitridation, the oxidation kinetics of titanium powder were also studied in dry oxygen at I atm pressure. An automatic recording electrobalance was used to measure the weight gain as a function of time and temperature. For the reaction with nitrogen, the nitride was formed at over $700^{\circ}C$. The reaction with nitrogen followed the parabolic rate law, and the activation energy was calculated to be 31 kcal/mol in the isothermal method (above $900^{\circ}C$). The non-stoichiometric TiNx has been synthesized by the nitridation at a proper temperature and time, followed by the homogenizing treatment above $1100^{\circ}C$. In comparison with the stoichiometric $TiN_{1.0}$ and the non-stoichiometric TiNx ($TiN_{0.5}$ and $TiN_{0.65}$), the hot oxidation characteristics of the former is superior to that of the latter. However, both non-stoichiometric nitrides make little difference in the hot oxidation characteristics.

• 한국세라믹학회지
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• 제40권3호
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• pp.249-254
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• 2003

AI, AIN 및 질화반응 촉진을 위한 첨가제로서 Li$_2$CO$_3$, Y$_2$O$_3$, CaCO$_3$를 혼합한 후 성형체를 제조하여 질소 분위기에서 열처리하였고, 용매 및 첨가제의 종류와 질화온도가 AI-AIN계의 질화반응에 미치는 영향에 대하여 고찰하였다. 1.0wt%의 olcic acid.를 첨가한 ethanol을 혼합용매로 사용한 경우 AI과 AIN 입자의 표면개질 효과를 질화반응시 산화물 생성을 최소화시킬 수 있었다. 그리고 AI-AIN계에 Li$_2$CO$_3$ 또는 CaCO$_3$를 첨가한 경우Y$_2$O$_3$를 첨가한 경우에 비하여 질화 열처리시 생성되는 산화물의 생성을 크게 억제시킬 수 있었다.

• 한국세라믹학회지
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• 제29권11호
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.