• 제목/요약/키워드: Nickel oxide film

검색결과 73건 처리시간 0.028초

Evaluation of Iron Nickel Oxide Nanopowder as Corrosion Inhibitor: Effect of Metallic Cations on Carbon Steel in Aqueous NaCl

  • Chaudhry, A.U.;Mittal, Vikas;Mishra, Brajendra
    • Corrosion Science and Technology
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    • 제15권1호
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    • pp.13-17
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    • 2016
  • The aim of this study was to evaluate the use of iron-nickel oxide ($Fe_2O_3$.NiO) nanopowder (FeNi) as an anti-corrosion pigment for a different application. The corrosion protection ability and the mechanism involved was determined using aqueous solution of FeNi prepared in a corrosive solution containing 3.5 wt.% NaCl. Anti-corrosion abilities of aqueous solution were determined using electrochemical impedance spectroscopy (EIS) on line pipe steel (API 5L X-80). The protection mechanism involved the adsorption of metallic cations on the steel surface forming a protective film. Analysis of EIS spectra revealed that corrosion inhibition occurred at low concentration, whereas higher concentration of aqueous solution produced induction behavior.

Study of Electrochemical Cs Uptake Into a Nickel Hexacyanoferrate/Graphene Oxide Composite Film

  • Choi, Dongchul;Cho, Youngjin;Bae, Sang-Eun;Park, Tae-Hong
    • Journal of Electrochemical Science and Technology
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    • 제10권2호
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    • pp.123-130
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    • 2019
  • We investigated the electrochemical behavior of an electrode coated with a nickel hexacyanoferrate/graphene oxide (NiPB/GO) composite to evaluate its potential use for the electrochemical separation of radioactive Cs as a promising approach for reducing secondary Cs waste after decontamination. The NiPB/GO-modified electrode showed electrochemically switched ion exchange capability with excellent selectivity for Cs over other alkali metals. Furthermore, the repetitive ion insertion and desertion test for assessing the electrode stability showed that the electrochemical ion exchange capacity of the NiPB/GO-modified electrode increased further with potential cycling in 1 M of $NaNO_3$. In particular, this electrochemical treatment enhanced Cs uptake by nearly two times compared to that of NiPB/GO and still retained the ion selectivity of NiPB, suggesting that the electrochemically treated NiPB/GO composite shows promise for nuclear wastewater treatment.

Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors and Their Micro-patterning by using SAM

  • Suzuki, Hisao
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.907-912
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    • 2005
  • Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

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Energy Band Structure, Electronic and Optical properties of Transparent Conducting Nickel Oxide Thin Films on $SiO_2$/Si substrate

  • Denny, Yus Rama;Lee, Sang-Su;Lee, Kang-Il;Lee, Sun-Young;Kang, Hee-Jae;Heo, Sung;Chung, Jae-Gwan;Lee, Jae-Cheol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.347-347
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    • 2012
  • Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

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스퍼터링을 통하여 다공성 양극산화 알루미늄 기판에 증착되는 니켈 박막의 기공 크기 조절 (Control of the Pore Size of Sputtered Nickel Thin Films Supported on an Anodic Aluminum Oxide Substrate)

  • 지상훈;장춘만;정우철
    • 한국수소및신에너지학회논문집
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    • 제29권5호
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    • pp.434-441
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    • 2018
  • The pore size of nickel (Ni) bottom electrode layer (BEL) for low-temperature solid oxide fuel cells embedded with ultrathin-film electrolyte was controlled by changing the substrate surface morphology and deposition process parameters. For ~150-nm-thick Ni BEL, the upper side of an anodic aluminum oxide (AAO) substrate with ~65-nm-sized pores provided ~1.7 times smaller pore size than the lower side of the AAO substrate. For ~100-nm-thick Ni BEL, the AAO substrate with ~45-nm-sized pores provided ~2.6 times smaller pore size than the AAO substrate with ~95-nm-sized pores, and the deposition pressure of ~4 mTorr provided ~1.3 times smaller pore size than that of ~48 mTorr. On the AAO substrate with ~65-nm-sized pores, the Ni BEL deposited for 400 seconds had ~2 times smaller pore size than the Ni BEL deposited for 100 seconds.

초단 펄스레이저 어블레이션에 의한 스테인리스강 표면의 오염산화막 제거 특성 (A Study on the Removal Characteristics of a Radioactively Contaminated Oxide Film from the irradiated Stainless Steel Surface using Short Pulsed Laser Ablation)

  • 김근우;윤성식;김기철;이명원;강명창
    • 한국기계가공학회지
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    • 제19권10호
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    • pp.105-110
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    • 2020
  • Radioactive Oxides are formed on the surface of the primary equipment in a nuclear power plant. In order to remove the oxide film that is formed on the surfaces of the equipment, chemical and physical decontamination technologies are used. The disadvantage of traditional technologies is that they produce secondary radioactive wastes. Therefore, in this study, the short-pulsed laser eco-friendly technology was used in order to reduce production of the secondary radioactive wastes. They were also used to minimize the damages that were caused on the base material and to remove the contaminated oxide film. The study was carried out using a Stainless steel 304 specimen that was coated with nickel-ferrite particles. Further, the laser source was selected with two different wavelengths. Furthermore, the depth of the coating layer was analyzed using a 3D laser microscope by changing the laser ablation conditions. Based on the analysis, the optimal conditions of ablation were determined using a 1064nm short-pulsed laser ablation technique in order to remove the radioactively contaminated oxide film from the irradiated stainless steel surface.

RF 스퍼터링에 의해 제조된 Li-Ni-O 박막의 전기변색 특성 (RF Sputtered Lithium Nickel Oxide Films and Their Electrochromism)

  • 김영일;김배환;최진호;;박남규
    • 대한화학회지
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    • 제41권11호
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    • pp.594-599
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    • 1997
  • RF 스피터링법을 써서 $Li_{2x}Ni_{1-x}O$ 박막을 제조하였으며, 그 과정에서 기판의 온도$(50/230^{\circ}C)와$ 분위기 $(Ar/O_2)$를 변수로써 막의 미세구조를 조절하였다. 투과전자현미경을 이용한 막 구조 분석에 의해 낮은 기판 온도와 $O_2$ 조건에서 막의 조성입자가 작아짐을 관찰하였고, $50^{\circ}C/O_2$ 하에서 얻이진 $Li_{2x}Ni_{1-x}O$ 박막은 약 $80\AA$ 크기의 입자로 이루어져 있었다. 전기화학적 조건 하에서 $Li_{2x}Ni_{1-x}O$ 박막의 변색현상을 조사한 결과, 박막의 미세구조 발달에 의해 $Li^+$ 이온의 가역적 수용량이 증가하고, 결과적으로 전기변색 기능이 향상됨을 알 수 있엇다. 50 $^{\circ}C/O_2$ 하에서 얻어진 170 nm 두께의 $Li_{2x}Ni_{1-x}O$ 박막은 30 mC/$cm^2$$Li^+$ 이온 수용력과 함께 약 1.3의 흡광밀도(OD)를 나타내었다.

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Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

  • An, Ho-Myoung;Kim, Jooyeon
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.187-189
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    • 2015
  • A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of −1 V, respectively.

무기막 NiOx의 정렬 패턴 전사를 이용한 액정의 배향 특성 연구 (A Study on the Liquid Crystal Orientation Characteristics of the Inorganic NiOx Film with Aligned Nanopattern Using Imprinting Process)

  • 오병윤
    • 한국전기전자재료학회논문지
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    • 제32권5호
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    • pp.357-360
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    • 2019
  • We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.

저온 고체산화물연료전지 구현을 위한 다층 나노기공성 금속기판의 제조 (Development of Metal Substrate with Multi-Stage Nano-Hole Array for Low Temperature Solid Oxide Fuel Cell)

  • 강상균;박용일
    • 한국세라믹학회지
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    • 제42권12호
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    • pp.865-871
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    • 2005
  • Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.