• Korean Chemical Engineering Research
• /
• 제50권2호
• /
• pp.204-210
• /
• 2012

니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 ${\mu}m$ 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 $F^-$ 이온을 공급하기 위해 $NH_4F$를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제7권1호
• /
• pp.29-34
• /
• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• 한국자기학회지
• /
• 제22권2호
• /
• pp.42-44
• /
• 2012

니켈-철 합금 박막의 성분을 연속적으로 변화시키는 방법을 조사하였다. 일정한 전해액에 가해지는 도금 전류와 전압의 변화에 따라 박막 내 니켈과 철의 상대적 함유량의 조절이 가능했는데, 그 결과 도금 박막의 보자력, 각형비 및 포화자기장이 변화하였다. 정전류도금과 정전압 도금 방법으로 박막 내 철의 함유량을 증가시킴에 따라 박막의 입도는 증가하였고 보자력은 감소하는 경향을 나타내었다.

• 한국재료학회지
• /
• 제26권6호
• /
• pp.293-297
• /
• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.243-246
• /
• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1182-1184
• /
• 2006

A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2000년도 추계학술대회논문집 - 한국공작기계학회
• /
• pp.181-187
• /
• 2000

This study is object to structural analysis comparison of continuous casting mold. A two-dimensional finite element model was developed to compute the temperature distribution, thermal stress and thermal strain behavior for continuous casting mold. For structural analysis using thermal analysis result from ANSYS. In other to structural analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2000년도 추계학술대회논문집 - 한국공작기계학회
• /
• pp.200-205
• /
• 2000

This study is object to thermal analysis comparison of continuous casting mold. A two-dimensional transient finite element model was developed to compute the temperature distribution for continuous casting mold. For thermal analysis using analysis result from ANSYS. In other to thermal analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

• Bulletin of the Korean Chemical Society
• /
• 제15권11호
• /
• pp.976-980
• /
• 1994

The sensitivity factors and the error propagation factors are defined for the three-parameter ellipsometry (TPE). The sensitivity factor is useful for understanding the nature of the TPE measurements in connection with determination of the optical properties and the thickness of a film. On the other hand, the error propagation factors provide a quantitative tool for predicting the optimum condition for TPE experiments. Their usefulness is demonstrated for the passive film formed on nickel in aqueous solution.

• 한국전기전자재료학회논문지
• /
• 제32권5호
• /
• pp.357-360
• /
• 2019

We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.