Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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Preparation of Nickel Oxide Films by Anodizing

양극산화를 이용한 산화니켈 박막 제조

  • Kim, Youngjin (Department of Chemical Engineering, Kyonggi University) ;
  • Jung, Jihoon (Department of Chemical Engineering, Kyonggi University)
  • Received : 2011.08.03
  • Accepted : 2011.08.30
  • Published : 2012.04.01
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Abstract

Nickel oxide thin films with 2.3 ${\mu}m$ thickness were prepared in order to overcome limitations of thickness with nm dimension by anodizing. For the electrolyte, ethylene glycol was used as solvent, and $NH_4F$ was added for source of $F^-$ ions. The anodizing experiments were carried out on various voltages such as 40, 60 V and 80 V for 12 hours. The thickness of NiO was changed according to the anodizing time and the voltage. However, destruction of Ni caused by rapid oxidation reaction occurred at 80 V. XRD results show that NiO was successfully created by anodizing.

니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 ${\mu}m$ 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 $F^-$ 이온을 공급하기 위해 $NH_4F$를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.

Keywords

Acknowledgement

Supported by : 지식경제부

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