한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Fabrication of the Poly-Si Thin Film Transistor on the Mica Substrate

  • Lee, Seung-Ryul (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Jin-Ho (Electronics and Telecommunications Research Institute) ;
  • Ahn, Byung-Tae (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Published : 2006.08.22
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Abstract

A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

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