• 제목/요약/키워드: Nickel Oxide (NiO)

검색결과 174건 처리시간 0.029초

Characterization of Nickel Oxide Nanofibers Obtained by Electrospinning

  • Park, Juyun;Kang, Yong-Cheol;Koh, Sung Wi
    • 통합자연과학논문집
    • /
    • 제11권1호
    • /
    • pp.14-18
    • /
    • 2018
  • Nickel oxide nanofibers were synthesized by electrospinning with nickel(II) acetate tetrahydrate and polyvinylpyrrolidone and calcination process. The nanofiber shape was easily detected from the nanofibers with high Ni contents after calcined at $600^{\circ}C$ and the crystal structure of layer-by-layer growth was observed from SEM images at $900^{\circ}C$. XRD and TEM results showed metallic Ni and NiO structure were formed at nanofibers obtained at 600 and $900^{\circ}C$ and the crystallite size was calculated from 25 to 55 nm. The surface of nanofibers was fully oxidized from the deconvoluted Cu 2p and O 1s XPS spectra.

양극산화를 이용한 산화니켈 박막 제조 (Preparation of Nickel Oxide Films by Anodizing)

  • 김영진;정지훈
    • Korean Chemical Engineering Research
    • /
    • 제50권2호
    • /
    • pp.204-210
    • /
    • 2012
  • 니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 ${\mu}m$ 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 $F^-$ 이온을 공급하기 위해 $NH_4F$를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.

The Fabrication of Porous Nickel Oxide Thin Film using Anodization Process for an Electrochromic Device

  • 이원창;최은창;홍병유
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.407.1-407.1
    • /
    • 2016
  • Electrochromism is defined as a phenomenon which involves persistently repeated change of optical properties between bleached state and colored state by simultaneous injection of electrons and ions, sufficient to induce an electrochemical redox process. Due to this feature, considerable progress has been made in the synthesis of electrochromic (EC) materials, improvements of EC properties in EC devices such as light shutter, smart window and variable reflectance mirrors etc. Among the variable EC materials, solid-state inorganics in particular, metal oxide semiconducting materials such as nickel oxide (NiO) have been investigated extensively. The NiO that is an anodic EC material is of special interest because of high color contrast ratio, large dynamic range and low material cost. The high performance EC devices should present the use of standard industrial production techniques to produce films with high coloration efficiency, rapid switching speed and robust reversibility. Generally, the color contrast and the optical switching speed increase drastically if high surface area is used. The structure of porous thin film provides a specific surface area and can facilitate a very short response time of the reaction between the surface and ions. The large variety of methods has been used to prepare the porous NiO thin films such as sol-gel process, chemical bath deposition and sputtering. Few studies have been reported on NiO thin films made by using sol-gel method. However, compared with dry process, wet processes that have the questions of the durability and the vestige of bleached state color limit the thin films practical use, especially when prepared by sol-gel method. In this study, we synthesis the porous NiO thin films on the fluorine doped tin oxide (FTO) glass by using sputtering and anodizing method. Also we compared electrical and optical properties of NiO thin films prepared by sol gel. The porous structure is promised to be helpful to the properties enhancement of the EC devices.

  • PDF

Lithium-silicate coating on Lithium Nickel Manganese Oxide (LiNi0.7Mn0.3O2) with a Layered Structure

  • Kim, Dong-jin;Yoon, Da-ye;Kim, Woo-byoung;Lee, Jae-won
    • 한국분말재료학회지
    • /
    • 제24권2호
    • /
    • pp.87-95
    • /
    • 2017
  • Lithium silicate, a lithium-ion conducting ceramic, is coated on a layer-structured lithium nickel manganese oxide ($LiNi_{0.7}Mn_{0.3}O_2$). Residual lithium compounds ($Li_2CO_3$ and LiOH) on the surface of the cathode material and $SiO_2$ derived from tetraethylorthosilicate are used as lithium and silicon sources, respectively. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive spectroscopy analyses show that lithium silicate is coated uniformly on the cathode particles. Charge and discharge tests of the samples show that the coating can enhance the rate capability and cycle life performance. The improvements are attributed to the reduced interfacial resistance originating from suppression of solid-electrolyte interface (SEI) formation and dissolution of Ni and Mn due to the coating. An X-ray photoelectron spectroscopy study of the cycled electrodes shows that nickel oxide and manganese oxide particles are formed on the surface of the electrode and that greater decomposition of the electrolyte occurs for the bare sample, which confirms the assumption that SEI formation and Ni and Mn dissolution can be reduced using the coating process.

NiFe2O4의 수소환원에 의한 나노구조 Fe-Ni 합금의 제조 및 자성특성 (Synthesis and Magnetic Properties of Nanocrystalline Fe-Ni Alloys During Hydrogen Reduction of NiFe2O4)

  • 백민규;도경효;;박종진
    • 대한금속재료학회지
    • /
    • 제49권1호
    • /
    • pp.52-57
    • /
    • 2011
  • Nickel ferrite ($NiFe_2O_4$) powder was prepared through the ceramic route by calcination of a stoichiometric mixture of nickel oxide (NiO) and iron oxide ($Fe_2O_3$). The pressed pellets of $NiFe_2O_4$ were isothermally reduced in pure hydrogen at 800, 900, 1000 and $1100^{\circ}C$. Based on thermogravimetric analysis, the reduction behavior and the kinetic reaction mechanisms of the synthesized ferrite were studied. The initial ferrite powder and various reduction products were characterized by XRD, SEM, reflected light microscope and VSM to reveal the effect of hydrogen reduction on the composition, microstructure, magnetic properties and reaction kinetics of the produced Fe-Ni alloy. Complete reduction of the $NiFe_2O_4$ was achieved with synthesis of homogeneous nanocrystalline Fe-Ni alloys. Arrhenius equation with the approved mathematical formulations for a gas-solid reaction was applied for calculating the activation energy ($E_a$) values and detecting the controlling reaction mechanism.

The Effect of Substrate Temperature on the Electrical, Electronic, Optical Properties and the Local Structure of Transparent Nickel Oxide Thin Films

  • Lee, Kangil;Kim, Beomsik;Kim, Juhwan;Park, Soojeong;Lee, Sunyoung;Denny, Yus Rama;Kang, Hee Jae;Yang, Dong-Seok
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.397-397
    • /
    • 2013
  • The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

  • PDF

Fabrication of Hybrid NiO/ACF/TiO2 Composites and Their Photocatalytic Activity Under Visible Light

  • Meng, Ze-Da;Han, Sang-Bum;Kim, Doo-Hwan;Park, Chong-Yeon;Oh, Won-Chun
    • 한국세라믹학회지
    • /
    • 제48권3호
    • /
    • pp.211-216
    • /
    • 2011
  • Nickel oxide-doped ACF and $TiO_2$ composites (NiO/ACF/$TiO_2$) were prepared by a sol-gel method. The composite obtained was characterized by BET surface area measurements, X-ray diffraction, transmission electron microscopy and energy dispersive X-ray analysis. A methylene blue (MB) solution under visible light irradiation was used to determine their photocatalytic activity. Excellent photocatalytic degradation of the MB solution was observed using the $TiO_2$, Ti-ACF and NiO/ACF/$TiO_2$ composite under visible light.

초전도 선재의 중간 반응 방지막으로써 Ni 기판위에 제조된 NiO 막의 특성 분석 (Fabrication and characterization of nickel oxide films on textured nickel substrate for a superconductor buffer layer)

  • Park, Eunchul;Inki Hong;Hyunsuk Hwang;Taehyun Sung;Kwangsoo No
    • Progress in Superconductivity
    • /
    • 제3권1호
    • /
    • pp.95-98
    • /
    • 2001
  • Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

  • PDF

NiO 완충층 두께 조절에 의한 OLEDs 전기-광학적 특성 (Electrical and Luminescent Properties of OLEDs by Nickel Oxide Buffer Layer with Controlled Thickness)

  • 최규채;정국채;김영국;조영상;최철진;김양도
    • 대한금속재료학회지
    • /
    • 제49권10호
    • /
    • pp.811-817
    • /
    • 2011
  • In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.