• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• Progress in Superconductivity
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• v.7 no.1
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• pp.69-76
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• 2005

Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about $8{\sim}10$ degree of Ni and $3at.\%W-Ni$ alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate)$_3$:Sm(tmhd)$_3$ of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of $(Y_{x}Sm_{1-x})_{2}O_3$ was achieved at the temperature higher than $500^{\circ}C$ in $O_2$ atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying $H_{2}O$ vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of $650\~750^{\circ}C$, but the (400) growth became dominant above $800^{\circ}C$. The $(Y_{x}Sm_{1-x})_{2}O_3$-buffered metallic substrates can be used as the buffer for YBCO coated conductor.

• Journal of the Korean Chemical Society
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• v.58 no.1
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• pp.9-16
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• 2014

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on nickel were investigated, using the potentiodynamic method, chronoamperometry, and single- or multi-frequency electrochemical impedance spectroscopy. The oxide film formed during the passivation process of nickel has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film ($Ni(OH)_2$) of Ni formed in the low electrode potential changes to NiO and NiO(OH) while the electrode potential increases.

• Progress in Superconductivity
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• v.11 no.2
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• pp.100-105
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• 2010

Reel-to-reel deposition of $Y_2O_3$ has been performed on Ni-5%W metal substrates using the RF-sputtering method. The epitaxial orientation of $Y_2O_3$ buffer layers to the base bi-axially textured substrate was well identified using ${\theta}-2{\theta}$, out-of-plane ($\omega$), and in-plane ($\phi$) scans in X-ray diffraction analysis. The optimization of $Y_2O_3$ seed layers in reel-to-reel fashion were investigated varying the deposition temperature, sputtering power, and pressure for its significant roles for the following buffer stacks and superconducting layers. $Y_2O_3$ were all grown epitaxially on bi-axially textured metal substrates at 380 watts and 5 mTorr in the temperature range of $600-740^{\circ}C$ with higher $Y_2O_3$ (400) intensities at ${\sim}710^{\circ}C$. It was found that the $\Delta\omega$ values were $1-2^{\circ}$ lower but the $\Delta\phi$ values were above $1^{\circ}$ higher than that of Ni-W substrates. As the sputtering power increased from 340 to 380 watts, $\Delta\omega$ and $\Delta\phi$ values showed decreased tendency. Even in the small window of deposition pressure of 3-7 mTorr, the $Y_2O_3$ (400) intensities increased and $\Delta\omega$ and $\Delta\phi$ values were reduced as sputtering pressure increased.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.51-51
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.531-534
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• 2002

NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10$^{\circ}$. The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.20-22
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• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Journal of the Korean Chemical Society
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• v.57 no.5
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• pp.533-539
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• 2013

The electrochemical corrosion and passivation of Ni rotating disk electrod in borate buffer solution was studied with potentiodynamic and electrochemical impedance spectroscopy. The mechanisms of both the active dissolution and passivation of nickel and the hydrogen evolution in reduction reaction were hypothetically established while utilizing the Tafel slope, impedance data, the rotation speed of Ni-RDE and the pH dependence of corrosion potential and current. Based on the EIS data, an equivalent circuit was suggested. In addition, carefully measured were the electrochemical parameters for specific anodic dissolution regions. It can be concluded from the data collected that the $Ni(OH)_2$ oxide film, which is primarily formed by passivation, is converted to NiO by dehydration under the influence of an electrical field.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.