STRATEGIC RESEARCH AT ORNL EOR THE DEVELOPMENT OF ADVANCED COATED CONDUCTORS: PART - II

  • Paranthama, M. Parans (Oak Ridge National Laboratory) ;
  • Aytug, T. (Oak Ridge National Laboratory) ;
  • Sathyamurthy, S. (Oak Ridge National Laboratory) ;
  • Zhai, H.Y. (Oak Ridge National Laboratory) ;
  • Christen, H.M. (Oak Ridge National Laboratory) ;
  • Martin, P.M. (Oak Ridge National Laboratory) ;
  • Goyal, A. (Oak Ridge National Laboratory) ;
  • Christen, D.K. (Oak Ridge National Laboratory) ;
  • Kroeger, D.M.
  • Published : 2002.02.01

Abstract

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

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