• Title/Summary/Keyword: NiCo thin film

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Property Changes of Ni-Co Film with the Change of Co Concentration in Sulfamate-chloride Bath (Sulfamate-Chloride Bath에서 Co 농도의 변화에 따른 Ni-Co 필름의 특성 변화)

  • Yoon, Pilgeun;Park, Deok-Yong
    • Journal of the Korean institute of surface engineering
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    • v.53 no.1
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    • pp.1-8
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    • 2020
  • Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl2 concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl2 concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl2 concentration from 0 to 0.210 M CoCl2 in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl2 concentration. Nodular surface morphologies were observed at most CoCl2 concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl2 concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl2 concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl2 concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl2 concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.

Structural Characterization of CoCrFeMnNi High Entropy Alloy Oxynitride Thin Film Grown by Sputtering (스퍼터링 방법으로 성장한 코발트크롬철망간니켈 고엔트로피 질산화물 박막의 구조특성)

  • Lee, Jeongkuk;Hong, Soon-Ku
    • Korean Journal of Materials Research
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    • v.28 no.10
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    • pp.595-600
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    • 2018
  • This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

Effects of Ru Co-Sputtering on the Properties of Porous Ni Thin Films

  • Kim, Woo-Sik;Choi, Sun-Hee;Lee, Hae-Weon;Kim, Joo-Sun
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.746-750
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    • 2006
  • NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.

Exchange Bias Study by FMR Measurment (강자성 공명에 의한 Exchange Bias 연구)

  • Yoo, Yong-Goo;Park, Nam-Seok;Min, Seong-Gi;Yu, Seong-Cho
    • Journal of the Korean Magnetics Society
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    • v.15 no.5
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    • pp.265-269
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    • 2005
  • Exchange bias effect of a various layered thin films were studied by FMR measurment. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. Exchange biased NiFe/IrMn, IrMn/NiFe/IrMn, and NiFe/IrMn/CoFe thin films showed larger unidirectional anisotropy field and uniaxial anisotropy field with compared to that of an unbiased NiFe single thin film. In case of NiFe/Cu/IrMn, the film with thick Cu layer exhibited a similar trend to the unbiased NiFe thin film. NiFe/IrMn/CoFe thin film showed two resonance field distribution due to different ferromagnetic layers. In additon to the resonance field, the line width was also analysed with related to exchange bias effect.

Nickel Doping on Cobalt Oxide Thin Film Using by Sputtering Process-a Route for Surface Modification for p-type Metal Oxide Gas Sensors

  • Kang, Jun-gu;Park, Joon-Shik;An, Byeong-Seon;Yang, Cheol-Woong;Lee, Hoo-Jeong
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1867-1872
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    • 2018
  • This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

Evaluations of Mn-Ni-Co type thermistor thin film for thermal infrared sensing element (열형 적외선 센싱소자용 Mn-Ni-Co계 써미스터 박막 특성 평가)

  • 전민석;최덕균
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.6
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    • pp.297-303
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    • 2003
  • Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{\circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{\circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1\times 10^{-7}$ W/$Hz^{-1/2}$ and $0.2\times 10^6$cm $Hz^{1/2}$/W, respectively.

Formation of nickel oxide thin film and analysis of its electrical properties

  • Noh, Sang-Soo;Seo, Jeong-Hwan;Lee, Eung-Ahn;Lee, Seon-Gil;Park, Yong-Joon
    • Journal of Sensor Science and Technology
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    • v.14 no.1
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    • pp.52-55
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    • 2005
  • Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

Effects of Annealing Treatments on Microstructure and Mechanical Property of co-sputtered TiNi Thin Film (Co-sputtering에 의해 증착된 TiNi 박막의 미세조직 및 기계적성질에 미치는 어닐링 열처리 효과)

  • Park, S.D.;Baeg, C.H.;Hong, J.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.21 no.1
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    • pp.26-32
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    • 2008
  • Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

Chemisorption of CO on ultrathin epitaxial Ni films n Cu(001) surface

  • E.K. Hwang;J.J. Oh;Lee, J.S.;Kim, S.K.;Kim, J.S.;Kim, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.182-182
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    • 1999
  • The chemisorption effect of CO on the Ni/Cu(001) surface was investigated using LEED(Low Energy Electron Diffraction) and EELS(Electron Energy Loss Spectrscopy0 under the UHV conditions. after mounting the Cu(001) single crystal in the UHV chamber (base pressure 1$\times$10-10Torr), a clean surface was obtained after a few cycles of repeated Ar+ ion sputtering and annealing at about 40$0^{\circ}C$. The epitaxial thin Ni films were formed on the Cu(001) by evaporation from 99.999% Ni block. The pseudomorphic growth and the orderness of the thin Ni films were monitored by c(2$^{\circ}C$2) LEED pattern. CO adlayers on Ni epitaxial thin films were prepared by dosing pure CO has through a leak valve. After CO adsorpton at room temperature, two pairs of peaks were observed by EELS, whose relative intensities are changed as the film thickness is varied and time is elapsed. These two pair of peaks are likely related to different bonding sites (-top and bridge sites) of C-Ni as well as C-O vibration. Experimental results and qualitative interpretation of the spectra wille be discussed. The possibility of using EELS in combination with probe species (CO) to investigate the nature of thin film growth is mentioned. We will report the experimental result of O2 dosage on Ni film and interaction of CO and O2.

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A Study of Relationship between Magnetic Properties and Microstructure of CoNiCr/Cr Double Layer Thin Film Magnetic Recording Media (자기기록매체 CoNiCr/Cr 이중박막의 자기적 성질과 미세구조와의 관계연구)

  • 김희삼;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.215-220
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    • 1993
  • Microstructural dependence of magnetic property of RF/DC sputtered $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ double layer thin film was studied. Grain size was found to be decreased with substrate temperature in the range of $100-200^{\circ}C$ and Cr underlayer thickness(from $500\;{\AA}-2000\;{\AA}$). The peaks (200) and (1120) of X-ray diffraction patterns were evidently grown with the substrate temperature for the Cr underlayer and magnetic layer, respectively. The CoNiCr magnetic layer was found to be well epitaxialy grown on Cr underlayer, and subsequently the coercivity was enhanced.

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